公开(公告)号：US20120104455A1

公开(公告)日：2012-05-03

申请号：US13225117

申请日：2011-09-02

申请人： Wei-Chih PENG ,  Min-Hsun Hsieh ,  Ming-Chi Hsu ,  Wei-Yu Yen ,  Chun-Kai Wang ,  Yen-Chih Chen ,  Schang-Jing Hon ,  Hsin-Ying Wang ,  Chien-Kai Chung

发明人： Wei-Chih PENG ,  Min-Hsun Hsieh ,  Ming-Chi Hsu ,  Wei-Yu Yen ,  Chun-Kai Wang ,  Yen-Chih Chen ,  Schang-Jing Hon ,  Hsin-Ying Wang ,  Chien-Kai Chung

IPC分类号： H01L33/60 ,  H01L33/26

CPC分类号： H01L33/22 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/075 ,  H01L33/0066 ,  H01L33/12 ,  H01L33/16 ,  H01L33/305 ,  H01L33/46 ,  Y02E10/52 ,  Y02E10/548

摘要： An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

摘要翻译： 光电子器件包括衬底和形成在衬底上的第一过渡堆叠，其包括至少形成在衬底上的第一过渡层，并且具有形成在第一过渡层内部的至少一个中空部件，以及第二过渡层，其中第二过渡层 是形成在第一过渡层上的无意掺杂层或未掺杂层。

公开(公告)号：USD644187S1

公开(公告)日：2011-08-30

申请号：US29367474

申请日：2010-08-09

申请人： Chien-Fu Shen ,  Tsun-Kai Ko ,  Schang-Jing Hon

设计人： Chien-Fu Shen ,  Tsun-Kai Ko ,  Schang-Jing Hon

公开(公告)号：US07453098B2

公开(公告)日：2008-11-18

申请号：US11491124

申请日：2006-07-24

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

摘要： A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

摘要翻译： GaN基发光二极管的垂直电极结构公开了构成垂直电极结构的GaN基发光二极管的氧化物窗层，其有效地降低了菲涅尔反射损失和全反射，进一步提高了发光效率。 此外，进一步包括的金属反射层引起没有选择入射角的反射，从而增加反射角的覆盖，并进一步有效地反射从发光层发射的光。 此外，本发明的结构还可以提高散热和静电放电（ESD）的功能，从而增加部件的使用寿命并适用于高电流驱动下的使用。 此外，本发明的垂直电极结构能够降低芯片的制造方形并促进常规引线接合工艺的后期。

公开(公告)号：US20060273342A1

公开(公告)日：2006-12-07

申请号：US11501773

申请日：2006-08-10

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/10 ,  H01L33/18

摘要： A GaN-series of light emitting diode with high light extraction efficiency includes a substrate, a n-type semiconductor, a light emitting layer and a p-type semiconductor layer. More particular, the p-type semiconductor layer includes a p-type cladding layer, a p-type transition layer and a p-type ohmic contact layer, wherein the p-type transition layer is formed on the p-type cladding layer and the p-type ohmic contact layer is formed on the p-type transition layer. A doping concentration of magnesium of the p-type ohmic contact layer is between the p-type cladding layer and the p-type transition layer thereof that is to form the strain among three layers of the p-type semiconductor layer. Hence, a surface (the p-type ohmic contact layer) of the p-type semiconductor layer has a non-hexagonal texture, which interruptes the optical waveguide effect to increase external quantum efficiency and operation life of the light emitting diode.

摘要翻译： 具有高光提取效率的GaN系发光二极管包括衬底，n型半导体，发光层和p型半导体层。 更具体地，p型半导体层包括p型覆层，p型过渡层和p型欧姆接触层，其中p型过渡层形成在p型覆层上， p型欧姆接触层形成在p型过渡层上。 p型欧姆接触层的镁的掺杂浓度在p型覆层和p型过渡层之间，在p型半导体层的三层中形成应变。 因此，p型半导体层的表面（p型欧姆接触层）具有非六边形结构，其中断了光波导效应以增加发光二极管的外部量子效率和使用寿命。

公开(公告)号：US20060138449A1

公开(公告)日：2006-06-29

申请号：US11352205

申请日：2006-02-13

申请人： Schang-Jing Hon ,  Jenn-Bin Huang

发明人： Schang-Jing Hon ,  Jenn-Bin Huang

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

摘要： A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.

摘要翻译： 公开了一种用于白色发光器件（LED）和LED本身的制造方法和由此制造的发光结构。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

公开(公告)号：US20060097272A1

公开(公告)日：2006-05-11

申请号：US11311275

申请日：2005-12-20

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/22

摘要： A high light efficiency of GaN-series of light emitting diode and its manufacturing method thereof disclose a process and structure of a p-type semiconductor layer of surface texture structure generation. The optical waveguide effect can be interrupted and the possibility of hexagonal shaped pits defect generated can be reduced through said texture structure. The method explores that controlling the tension and compression of strain while a p-type cladding layer and a p-type transition layer are generated, and then a p-type ohmic contact is formed on said p-type transition layer. Through the control and its structure of said epitaxial growth process, the surface of said p-type semiconductor layer is with texture structure to increase external quantum efficiency and its operation life.

摘要翻译： GaN系发光二极管的高光效率及其制造方法公开了表面纹理结构生成的p型半导体层的工艺和结构。 可以中断光波导效应，并且可以通过所述纹理结构减少产生六边形凹坑缺陷的可能性。 该方法探索在p型覆层和p型过渡层产生时控制应变的张力和压缩，然后在所述p型过渡层上形成p型欧姆接触。 通过所述外延生长工艺的控制及其结构，所述p型半导体层的表面具有纹理结构，以增加外部量子效率及其使用寿命。

公开(公告)号：US20050263779A1

公开(公告)日：2005-12-01

申请号：US10781766

申请日：2004-02-20

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L29/22 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32

摘要： A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

摘要翻译： 对GaN系发光元件及其制造方法进行说明。 发光装置是其上具有光提取层的发光体。 发光体具有一些GaN基层，并且当施加能量时能够发光。 光提取层是具有电流扩散层和微结构层的双层结构，或没有电流扩展层的单层结构。 微结构层是通过Ti层退火获得的具有纳米网状结构的TiN层或具有金属簇的Pt层的PtN层。

公开(公告)号：US20050191179A1

公开(公告)日：2005-09-01

申请号：US10840267

申请日：2004-05-07

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

IPC分类号： H01L21/28 ,  H01L31/0328 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

摘要： A structure and manufacturing of a gallium nitride light emitting diode discloses a transparent conductive window layer comprising a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohimc contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

摘要翻译： 氮化镓发光二极管的结构和制造公开了包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

公开(公告)号：US20050186783A1

公开(公告)日：2005-08-25

申请号：US10781769

申请日：2004-02-20

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L21/301

CPC分类号： H01L33/0079

摘要： A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser array over the substrate. A laser light emitted by the laser array is least partially be transparent to the substrate and its energy may be absorbed by the thin film. The thin film is irradiated through the substrate. The substrate is then separated from the thin film.

摘要翻译： 描述了氮化镓（GaN）垂直发光二极管（LED）结构以及在GaN垂直LED中分离衬底和薄膜的方法。 该结构具有反射光的金属反射层。 该方法在衬底上提供激光阵列。 由激光器阵列发射的激光对于衬底至少部分是透明的，并且其能量可被薄膜吸收。 通过基板照射薄膜。 然后将基底与薄膜分离。

公开(公告)号：US20050161699A1

公开(公告)日：2005-07-28

申请号：US11082809

申请日：2005-03-18

申请人： Schang-Jing Hon

发明人： Schang-Jing Hon

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： Disclosed are a vertical GaN based light-emitting device (LED) structure and the manufacturing method thereof. In the structure and the corresponding method, a substrate unit having a mask is used to form a multi-layer epitaxial structure and the substrate and the multi-layer epitaxial structure are separated at the mask. After the multi-layer epitaxial structure is extracted, a metal reflector may be disposed thereunder. Next, a conductive substrate is bonded to the metal reflector. Next, an upper surface of the multi-layer structure is disposed with a p-electrode and a bottom side of the conductive substrate with an n-electrode whereby an vertical LED structure is formed.