公开(公告)号：US20110291771A1

公开(公告)日：2011-12-01

申请号：US13205933

申请日：2011-08-09

Applicant: Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

Inventor： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

IPC: H03H7/40 ,  H03H7/38

CPC classification number: H03H7/38

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

公开(公告)号：US20090272717A1

公开(公告)日：2009-11-05

申请号：US12407548

申请日：2009-03-19

Applicant: Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

Inventor： Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

IPC: C23F1/00

CPC classification number: H01L21/30655 ,  Y10T137/0318 ,  Y10T137/87169

Abstract: Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.

Abstract translation: 本发明的实施例涉及一种基板蚀刻系统和工艺。 在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率 在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。 在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到 该室用于促进在进出室和面板之间的气体之间的快速气体转变。

公开(公告)号：US20080182418A1

公开(公告)日：2008-07-31

申请号：US11733858

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302 ,  H01L21/461

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.

Abstract translation: 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

公开(公告)号：US20080182417A1

公开(公告)日：2008-07-31

申请号：US11733767

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302 ,  H01L21/461

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

Abstract translation: 在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生 中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。 调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

公开(公告)号：US20080179289A1

公开(公告)日：2008-07-31

申请号：US11685769

申请日：2007-03-14

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C23F1/00

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at an edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a local plasma chamber from a polymer etch precursor gas. The process includes directing a localized stream of an etchant by-product from the first plasma onto a target portion of the backside of the workpiece, the target portion having a diameter corresponding to a diameter of the stream, while rotating the workpiece.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 该方法还包括将工件的边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界 和一个含有背面的下部工艺区。 在聚合物蚀刻前体气体的局部等离子体室中产生第一等离子体。 该方法包括将来自第一等离子体的蚀刻剂副产物的局部流引导到工件的背面的目标部分上，目标部分具有对应于流的直径的直径，同时旋转工件。

公开(公告)号：US20080179287A1

公开(公告)日：2008-07-31

申请号：US11685766

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C23F1/00

CPC classification number: H01L21/0209 ,  H01L21/02063 ,  H01L21/31138

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at the edge of the workpiece, the gap configured to be on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. The process further includes evacuating the lower process zone, generating a plasma in an external chamber from a polymer etch precursor gas, and introducing a by-product from the plasma into the lower process zone. The process further includes pumping a purge gas into the upper process zone to remove polymer etch species from the upper process zone.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 气体流动被限制在工件的边缘处的工件边缘的间隙内，该间隙构造成约为室直径的约1％，间隙限定了含有 前侧和一个含有背面的下部工艺区。 该方法进一步包括排空下部工艺区域，从聚合物蚀刻前体气体在外部室中产生等离子体，以及将副产物从等离子体引入下部工艺区域。 该方法还包括将净化气体泵入上部工艺区域以从上部工艺区域去除聚合物蚀刻物质。

公开(公告)号：US20080003702A1

公开(公告)日：2008-01-03

申请号：US11427318

申请日：2006-06-28

Applicant: James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

Inventor： James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

IPC: H01L21/00

CPC classification number: H01L21/67069 ,  H01L21/67253 ,  H01L22/20

Abstract: Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. For example, an optical instrument adapted to measure properties of light over a specific portion of the electromagnetic spectrum may be used to detect one or more wavelength intensities from the plasma. Then, an electronic device, for example a computer software may analyze the wavelength intensities and a match circuit may then be adjusted. In this way, consistent plasma may be obtained. In other embodiments, the present invention may utilize the relationship between chamber pressure, substrate temperature, coil currents and/or the plasma in order to adjust and maintain a repeatable plasma process.

Abstract translation: 本发明的方面包括可以用于通过使用等离子体数据监视组件来监测和调整衬底处理系统中的等离子体的方法和装置。 例如，可以使用适于测量特定部分电磁光谱的光的光学仪器来检测来自等离子体的一个或多个波长强度。 然后，诸如计算机软件的电子设备可以分析波长强度，然后可以调整匹配电路。 以这种方式，可以获得一致的等离子体。 在其他实施例中，本发明可以利用腔室压力，衬底温度，线圈电流和/或等离子体之间的关系，以便调整和维持可重复的等离子体工艺。

公开(公告)号：US08931512B2

公开(公告)日：2015-01-13

申请号：US13414217

申请日：2012-03-07

Applicant: James P. Cruse ,  Ezra Robert Gold ,  John W. Lane

Inventor： James P. Cruse ,  Ezra Robert Gold ,  John W. Lane

IPC: F16K11/22 ,  B01F3/02 ,  G05D11/13

CPC classification number: B01F3/028 ,  G05D11/132 ,  Y10T137/0318 ,  Y10T137/2499 ,  Y10T137/8326 ,  Y10T137/87169 ,  Y10T137/87249 ,  Y10T137/87281 ,  Y10T137/87652 ,  Y10T137/8766 ,  Y10T137/87684

Abstract: Methods and apparatus for delivery of gas are provided herein. In some embodiments, a gas delivery system may include a premix tank having an inlet and an outlet; a plurality of gas supplies coupled to the inlet of the premix tank; a plurality of valves, each valve respectively disposed in line with a corresponding one of the plurality of gas supplies; and a conduit coupling the outlet of the premix tank to one or more gas delivery zones.

Abstract translation: 本文提供了用于输送气体的方法和装置。 在一些实施例中，气体输送系统可以包括具有入口和出口的预混合罐; 耦合到预混合容器的入口的多个气体供应源; 多个阀，每个阀分别与所述多个气体供应中的相应一个排放成一直线; 以及将预混合箱的出口连接到一个或多个气体输送区的导管。

公开(公告)号：US08845816B2

公开(公告)日：2014-09-30

申请号：US13408709

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00 ,  C23C16/44

CPC classification number: B08B5/00 ,  C23C16/44 ,  C23C16/4408 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32862 ,  Y10T137/0419

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract translation: 提供减少气体分布板污染的方法。 在一个实施例中，一种用于处理衬底的方法包括将衬底转移到腔室中，在衬底上执行处理过程，并且在处理过程之前或之后向室中提供净化气体，以相对于处理 过程从房间。 处理过程包括通过气体分配板将反应气体分配到室中。

公开(公告)号：US08562742B2

公开(公告)日：2013-10-22

申请号：US12907947

申请日：2010-10-19

Applicant: Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

Inventor： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

IPC: C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC classification number: H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68785 ,  Y10T137/6416 ,  Y10T137/8593

Abstract: Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.

Abstract translation: 本文提供了将气体输送到室的装置及其使用方法。 在一些实施例中，用于处理室的气体分配系统可以包括主体，其具有构造成将主体连接到处理室的内表面的第一表面，主体具有穿过主体设置的开口; 靠近所述开口的与所述主体的第一表面相对的第一端附近的凸缘，所述凸缘向内延伸到所述开口中并且构造成在其上支撑窗户; 以及多个气体分配通道，其设置在所述主体内并且将设置在所述主体内并且围绕所述开口的通道流体连接到设置在所述凸缘中的多个孔，其中所述多个孔围绕所述凸缘径向设置。