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    METAL SULFIDE CATALYSTS AND METHODS OF MAKING SAME
    16.
    发明申请
    METAL SULFIDE CATALYSTS AND METHODS OF MAKING SAME 有权
    金属硫化物催化剂及其制备方法

    公开(公告)号：US20100304964A1

    公开(公告)日：2010-12-02

    申请号：US12783663

    申请日：2010-05-20

    申请人： Madhu Anand ,  Brian C. Dunn ,  Glenn W. Dodwell

    发明人： Madhu Anand ,  Brian C. Dunn ,  Glenn W. Dodwell

    IPC分类号： B01J27/051 ,  C01G39/06

    CPC分类号： C01G39/06 ,  B01J27/04 ,  B01J27/047 ,  B01J27/051 ,  B01J37/031 ,  C01G31/00 ,  C01G41/00

    摘要： Methods and apparatus relate to catalysts and preparation of the catalysts, which are defined by sulfides of a transition metal, such as one of molybdenum, tungsten, and vanadium. Precursors for the catalysts include a metal ion source compound, such as molybdenum trioxide, and a sulfide ion source compound, such as thioacetamide. Once the precursors are dissolved if solid and combined in a mixture, homogenous precipitation from the mixture forms the catalysts. Exemplary uses of the catalysts include packing for a methanation reactor that converts carbon monoxide and hydrogen into methane.

    摘要翻译： 方法和装置涉及催化剂和制备催化剂，其由过渡金属的硫化物如钼，钨和钒中的一种所定义。 催化剂的前体包括金属离子源化合物，例如三氧化钼，以及硫化物离子源化合物，例如硫代乙酰胺。 一旦前体溶解如果固体并在混合物中组合，则从混合物中均匀沉淀形成催化剂。 催化剂的示例性用途包括将一氧化碳和氢气转化成甲烷的甲烷化反应器的填料。

    Selection and deposition of nanoparticles using CO2-expanded liquids
    17.
    发明授权
    Selection and deposition of nanoparticles using CO2-expanded liquids 有权
    使用二氧化碳膨胀液体选择和沉积纳米颗粒

    公开(公告)号：US07384879B2

    公开(公告)日：2008-06-10

    申请号：US11237601

    申请日：2005-09-27

    申请人： Christopher B. Roberts ,  Marshall Chandler McLeod ,  Madhu Anand

    发明人： Christopher B. Roberts ,  Marshall Chandler McLeod ,  Madhu Anand

    IPC分类号： H01L21/31

    CPC分类号： C30B7/00 ,  B05D1/18 ,  B05D2401/32 ,  B05D2401/90 ,  B82Y30/00 ,  C30B7/005 ,  C30B29/605 ,  Y10S977/70 ,  Y10S977/773

    摘要： A method for size selection of nanostructures comprising utilizing a gas-expanded liquids (GEL) and controlled pressure to precipitate desired size populations of nanostructures, e.g., monodisperse. The GEL can comprise CO2 antisolvent and an organic solvent. The method can be carried out in an apparatus comprising a first open vessel configured to allow movement of a liquid/particle solution to specific desired locations within the vessel, a second pressure vessel, a location controller for controlling location of the particles and solution within the first vessel, a inlet for addition of antisolvent to the first vessel, and a device for measuring the amount of antisolvent added. Also disclosed is a method for forming nanoparticle thin films comprising utilizing a GEL containing a substrate, pressurizing the solution to precipitate and deposit nanoparticles onto the substrate, removing the solvent thereby leaving a thin nanoparticle film, removing the solvent and antisolvent, and drying the film.

    摘要翻译： 纳米结构尺寸选择的方法包括利用气体膨胀液体（GEL）和受控压力来沉淀所需尺寸的纳米结构体，例如单分散。 GEL可以包含CO 2反溶剂和有机溶剂。 该方法可以在包括构造成允许液体/颗粒溶液移动到容器内的特定所需位置的第一开放容器的设备中进行，第二压力容器，位置控制器，用于控制颗粒和溶液的位置 第一容器，用于向第一容器添加抗溶剂的入口，以及用于测量加入的抗溶剂量的装置。 还公开了一种用于形成纳米颗粒薄膜的方法，其包括使用含有底物的GEL，将溶液加压沉淀并将纳米颗粒沉积到基材上，除去溶剂，从而留下薄的纳米颗粒膜，除去溶剂和反溶剂，并干燥膜 。

    Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
    18.
    发明授权
    Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture 失效
    双极场效应电可擦除可编程只读存储单元及其制造方法

    公开(公告)号：US5089433A

    公开(公告)日：1992-02-18

    申请号：US647185

    申请日：1991-01-24

    申请人： Kranti V. Anand ,  Madhu Anand

    发明人： Kranti V. Anand ,  Madhu Anand

    IPC分类号： G11C16/04 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8249 ,  H01L27/105 ,  H01L29/788

    CPC分类号： H01L29/66825 ,  G11C16/04 ,  H01L21/28273 ,  H01L21/8249 ,  H01L27/105 ,  H01L29/7881 ,  H01L29/7886

    摘要： A floating gate electrically erasable MOS transistor comprising a silicon substrate having source and drain regions and a channel region disposed between the source region and the drain region. The source and drain regions are formed from a semiconductor material having one conductivity type, and the channel region is formed from a semiconductor material having a conductivity type opposite the conductivity type of the semiconductor material forming the source and drain regions. A control gate region is formed in the silicon substrate horizontally spaced apart from the channel region. The gate region is formed from a semiconductor material having the same conductivity type as the semiconductor material forming the source and drain regions. A polysilicon layer bridges the control gate region and the channel region for communicating an electrical potential from the first gate region to the channel region. A silicon dioxide layer is disposed between the polysilicon layer and the control gate and channel regions for insulating the polysilicon layer from these regions. The polysilicon layer thus serves the function of a floating gate, and is selectively controlled through the first gate region for forming a conductive channel between the source and drain regions. The drain region of the MOS transistor is coupled to the base terminal of a bipolar sensing transistor for forming an EEPROM.

    摘要翻译： 一种浮置栅极电可擦除MOS晶体管，包括具有源极和漏极区域的硅衬底以及设置在源极区域和漏极区域之间的沟道区域。 源极和漏极区域由具有一种导电类型的半导体材料形成，并且沟道区域由具有与形成源极和漏极区域的半导体材料的导电类型相反的导电类型的半导体材料形成。 控制栅极区域形成在与沟道区域水平间隔开的硅衬底中。 栅极区域由与形成源区和漏极区的半导体材料具有相同导电类型的半导体材料形成。 多晶硅层桥接控制栅极区域和沟道区域，用于将电势从第一栅极区域传导到沟道区域。 二氧化硅层设置在多晶硅层和用于使多晶硅层与这些区域绝缘的控制栅极和沟道区域之间。 因此，多晶硅层起到浮动栅极的功能，并且通过第一栅极区域选择性地控制，以在源极和漏极区域之间形成导电沟道。 MOS晶体管的漏极区域耦合到用于形成EEPROM的双极检测晶体管的基极端子。