公开(公告)号：US20050059094A1

公开(公告)日：2005-03-17

申请号：US10887233

申请日：2004-07-09

申请人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark

发明人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark

IPC分类号： C07H21/04 ,  C07K1/00 ,  C12N1/20 ,  C12P21/06 ,  C12Q20060101 ,  G01N33/50 ,  G01N33/53 ,  G01N33/566 ,  G01N33/567 ,  G01N33/68

CPC分类号： G01N33/6872 ,  C12N15/85 ,  C12N2320/10 ,  C12N2503/02 ,  C12Q1/025 ,  G01N33/5044 ,  G01N2500/10

摘要： In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans. The assays described herein have advantages over existing cellular expression systems. In the case of mammalian cells, such assays can be run in standard 96 or 384 well culture plates in high-throughput mode with enhanced assay results being achieved by the use of a compound that inhibits ENaC function, preferably an amiloride derivative such as Phenamil. In the case of the inventive oocyte electrophysiological assays (two-electrode voltage-clamp technique), these assays facilitate the identification of compounds which specifically modulate human ENaC. The assays of the invention provide a robust screen useful to detect compounds that facilitate (enhance) or inhibit hENaC function. Compounds that enhance or block human ENaC channel activity should thereby modulate salty taste in humans.

摘要翻译： 一方面，本发明涉及从人肾C-DNA文库克隆的人上皮钠通道（hENaC）的分析和筛选的基于哺乳动物细胞的高通量测定，并且还在包括人类味道的其它组织中表达 组织。 本发明还涉及用于鉴定人类ENaC调节剂，优选ENaC增强子的两栖动物基于卵母细胞的中等通量电生理测定法。 在基于细胞的ENaC测定中调节ENaC功能的化合物预期会影响人类的咸味。 本文所述的测定法优于现有的细胞表达系统。 在哺乳动物细胞的情况下，这种测定可以在高通量模式的标准96或384孔培养板中进行，通过使用抑制ENaC功能的化合物，优选阿米洛利衍生物，如苯胺，可以实现增强的测定结果。 在本发明的卵母细胞电生理测定（双电极电压钳技术）的情况下，这些测定有助于鉴定特异性调节人类ENaC的化合物。 本发明的测定提供了可用于检测促进（增强）或抑制hENaC功能的化合物的强壮屏幕。 增强或阻断人类ENaC通道活性的化合物应该调节人体的咸味。

公开(公告)号：US11281755B2

公开(公告)日：2022-03-22

申请号：US16548611

申请日：2019-08-22

申请人： Hong Chang ,  Alex C Lee

发明人： Hong Chang ,  Alex C Lee

IPC分类号： G06F21/32 ,  G06K9/62 ,  G06N20/00 ,  G06F3/0487

摘要： Described herein are systems and methods for secure biometric identification using dynamic pressure sensing that are convenient and intuitive to use. Accurate identification is accomplished by using a set of finely spaced analog sensors that measure and output a dynamic pressure profile that is then evaluated based on data from a trained model. The model comprises a number of personal biometric characteristics that may be used to uniquely identify a person, e.g., for authentication purposes, such as granting access to sensitive, confidential information in connection with an electronic commercial transaction, an Internet of Things (IoT) device, an automotive device, an identity and access management (IAM), or a robotic or high functioning touch sensing device.

公开(公告)号：US10048274B2

公开(公告)日：2018-08-14

申请号：US13206656

申请日：2011-08-10

申请人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

发明人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

IPC分类号： C12N5/10 ,  G01N33/68 ,  G01N33/50

摘要： In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans.

公开(公告)号：US09000514B2

公开(公告)日：2015-04-07

申请号：US13560247

申请日：2012-07-27

申请人： Yeeheng Lee ,  Sung-Shan Tai ,  Hong Chang ,  John Chen

发明人： Yeeheng Lee ,  Sung-Shan Tai ,  Hong Chang ,  John Chen

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/51

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/66719 ,  H01L29/66734

摘要： Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected portions of the insulating material leaving a portion of the insulating material in a bottom portion of the trench; forming one or more spacers on one or more sidewalls of a remaining portion of the trench; anisotropically etching the insulating material in the bottom portion of the trench using the spacers as a mask to form a trench in the insulator; removing the spacers; and filling the trench in the insulator with a conductive material. Alternatively, an oxide-nitride-oxide (ONO) structure may be formed on a sidewall and at a bottom of the trench and one or more conductive structures may be formed in a portion of the trench not occupied by the ONO structure.

摘要翻译： 公开了半导体器件制造方法和器件。 可以通过在半导体层中形成来制造器件; 用绝缘材料填充沟槽; 去除所述绝缘材料的选定部分，使所述绝缘材料的一部分留在所述沟槽的底部; 在所述沟槽的剩余部分的一个或多个侧壁上形成一个或多个间隔物; 使用间隔物作为掩模对沟槽的底部中的绝缘材料进行各向异性蚀刻，以在绝缘体中形成沟槽; 去除垫片; 并用导电材料填充绝缘体中的沟槽。 或者，氧化物 - 氧化物 - 氧化物（ONO）结构可以形成在沟槽的侧壁和底部，并且可以在不被ONO结构占据的沟槽的一部分中形成一个或多个导电结构。

公开(公告)号：US08994101B2

公开(公告)日：2015-03-31

申请号：US13865941

申请日：2013-04-18

申请人： Hong Chang ,  Yi Su ,  Wenjun Li ,  Limin Weng ,  Jongoh Kim ,  John Chen

发明人： Hong Chang ,  Yi Su ,  Wenjun Li ,  Limin Weng ,  Gary Chen ,  Jongoh Kim ,  John Chen

IPC分类号： H01L29/772 ,  H01L29/78 ,  H01L27/088 ,  H01L21/283 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/732 ,  H01L29/423 ,  H01L21/265 ,  H01L29/45 ,  H01L29/49 ,  H01L29/10

CPC分类号： H01L29/7811 ,  H01L21/26586 ,  H01L21/283 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device.

摘要翻译： 一种制造半导体器件的方法包括使用第一掩模形成多个沟槽。 沟槽包括位于终端区域外部和两个相邻有效区域之间的源拾取沟槽。 使用第二掩模形成由中间介电区分隔的第一和第二导电区域。 使用第三掩模形成到第一导电区域的第一电接触和到第二导电区域的第二电接触，并形成源极金属区域。 使用第四掩模形成与栅极金属区域的接触。 半导体器件包括位于端子区域外部并位于器件的有源区域外部的源极拾取触点。

公开(公告)号：US08431457B2

公开(公告)日：2013-04-30

申请号：US12722384

申请日：2010-03-11

申请人： Hong Chang ,  Yi Su ,  Wenjun Li ,  Limin Weng ,  Gary Chen ,  Jongoh Kim ,  John Chen

发明人： Hong Chang ,  Yi Su ,  Wenjun Li ,  Limin Weng ,  Gary Chen ,  Jongoh Kim ,  John Chen

IPC分类号： H01L21/027 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L21/26586 ,  H01L21/283 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device.

摘要翻译： 一种制造半导体器件的方法包括使用第一掩模形成多个沟槽。 沟槽包括位于终端区域外部和两个相邻有效区域之间的源拾取沟槽。 使用第二掩模形成由中间介电区分隔的第一和第二导电区域。 使用第三掩模形成到第一导电区域的第一电接触和到第二导电区域的第二电接触，并形成源极金属区域。 使用第四掩模形成与栅极金属区域的接触。 半导体器件包括位于端子区域外部并位于器件的有源区域外部的源极拾取触点。

公开(公告)号：US20120280307A1

公开(公告)日：2012-11-08

申请号：US13098852

申请日：2011-05-02

申请人： Yi Su ,  Daniel Ng ,  Anup Bhalla ,  Hong Chang ,  Jongoh Kim ,  John Chen

发明人： Yi Su ,  Daniel Ng ,  Anup Bhalla ,  Hong Chang ,  Jongoh Kim ,  John Chen

IPC分类号： H01L27/06 ,  H01L21/336

CPC分类号： H01L29/7801 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0891 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/47 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/782 ,  H01L29/872

摘要： A semiconductor device includes a plurality of trenches including active gate trenches in an active area and gate runner/termination trenches and shield electrode pickup trenches in a termination area outside the active area. The gate runner/termination trenches include one or more trenches that define a mesa located outside an active area. A first conductive region is formed in the plurality of trenches. An intermediate dielectric region and termination protection region are formed in the trenches that define the mesa. A second conductive region is formed in the portion of the trenches that define the mesa. The second conductive region is electrically isolated from the first conductive region by the intermediate dielectric region. A first electrical contact is made to the second conductive regions and a second electrical contact to the first conductive region in the shield electrode pickup trenches. One or more Schottky diodes are formed within the mesa.

摘要翻译： 半导体器件包括多个沟槽，包括有源区域中的有源栅极沟槽和栅极流道/终止沟槽以及在有源区域外部的终止区域中的屏蔽电极拾取沟槽。 栅极流道/终止沟槽包括限定位于有源区域之外的台面的一个或多个沟槽。 在多个沟槽中形成第一导电区域。 在限定台面的沟槽中形成中间介质区域和端接保护区域。 在限定台面的沟槽部分中形成第二导电区域。 第二导电区域通过中间介电区域与第一导电区域电隔离。 对第二导电区域进行第一电接触，并且在屏蔽电极拾取沟槽中对第一导电区域进行第二电接触。 在台面内形成一个或多个肖特基二极管。

公开(公告)号：US20120070857A1

公开(公告)日：2012-03-22

申请号：US13206656

申请日：2011-08-10

申请人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

发明人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

IPC分类号： C12Q1/02 ,  C12N5/10

CPC分类号： G01N33/6872 ,  C12N15/85 ,  C12N2320/10 ,  C12N2503/02 ,  C12Q1/025 ,  G01N33/5044 ,  G01N2500/10

摘要： In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans.

摘要翻译： 一方面，本发明涉及从人肾C-DNA文库克隆的人上皮钠通道（hENaC）的分析和筛选的基于哺乳动物细胞的高通量测定，并且还在包括人类味道的其它组织中表达 组织。 本发明还涉及用于鉴定人类ENaC调节剂，优选ENaC增强子的两栖动物基于卵母细胞的中等通量电生理测定法。 在基于细胞的ENaC测定中调节ENaC功能的化合物预期会影响人类的咸味。

公开(公告)号：US08138605B2

公开(公告)日：2012-03-20

申请号：US12606005

申请日：2009-10-26

申请人： Hong Chang ,  John Chen ,  Limin Weng ,  Wenjun Li

发明人： Hong Chang ,  John Chen ,  Limin Weng ,  Wenjun Li

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/148 ,  H01L29/768 ,  H01L27/095

CPC分类号： H01L29/7813 ,  H01L29/41766 ,  H01L29/47 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/782 ,  H01L2924/0002 ,  Y10S257/905 ,  H01L2924/00

摘要： A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining portion of the contact trench. The barrier metal may comprise first and second metal layers. The first metal layer may be proximate to the sidewall and the bottom of the contact trench. The first metal layer may include a nitride. The second metal layer may be between the first metal layer and the tungsten plug and between the tungsten plug and the sidewall. The second metal layer covers portions of the sidewalls of not covered by the first metal layer.

摘要翻译： 形成在半导体衬底上的半导体器件可以包括形成在位于活性单元区域中的接触沟槽中的部件。 该部件可以包括沉积在接触沟槽的底部和侧壁的一部分上的阻挡金属和沉积在接触沟槽的剩余部分中的钨丝塞。 阻挡金属可以包括第一和第二金属层。 第一金属层可以靠近接触沟槽的侧壁和底部。 第一金属层可以包括氮化物。 第二金属层可以在第一金属层和钨插塞之间以及钨插塞和侧壁之间。 第二金属层覆盖未被第一金属层覆盖的侧壁的部分。

公开(公告)号：US08105792B2

公开(公告)日：2012-01-31

申请号：US10887233

申请日：2004-07-09

申请人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

发明人： Guy Servant ,  Hong Chang ,  Cyril Redcrow ,  Sumita Ray ,  Imran Clark ,  Bryan Moyer

IPC分类号： G01N33/53

CPC分类号： G01N33/6872 ,  C12N15/85 ,  C12N2320/10 ,  C12N2503/02 ,  C12Q1/025 ,  G01N33/5044 ,  G01N2500/10

摘要： In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans. The assays described herein have advantages over existing cellular expression systems. In the case of mammalian cells, such assays can be run in standard 96 or 384 well culture plates in high-throughput mode with enhanced assay results being achieved by the use of a compound that inhibits ENaC function, preferably an amiloride derivative such as Phenamil. In the case of the inventive oocyte electrophysiological assays (two-electrode voltage-clamp technique), these assays facilitate the identification of compounds which specifically modulate human ENaC. The assays of the invention provide a robust screen useful to detect compounds that facilitate (enhance) or inhibit hENaC function. Compounds that enhance or block human ENaC channel activity should thereby modulate salty taste in humans.

摘要翻译： 一方面，本发明涉及从人肾C-DNA文库克隆的人上皮钠通道（hENaC）的分析和筛选的基于哺乳动物细胞的高通量测定，并且还在包括人类味道的其它组织中表达 组织。 本发明还涉及用于鉴定人类ENaC调节剂，优选ENaC增强子的两栖动物基于卵母细胞的中等通量电生理测定法。 在基于细胞的ENaC测定中调节ENaC功能的化合物预期会影响人类的咸味。 本文所述的测定法优于现有的细胞表达系统。 在哺乳动物细胞的情况下，这种测定可以在高通量模式的标准96或384孔培养板中进行，通过使用抑制ENaC功能的化合物，优选阿米洛利衍生物，如苯胺，可以实现增强的测定结果。 在本发明的卵母细胞电生理测定（双电极电压钳技术）的情况下，这些测定有助于鉴定特异性调节人类ENaC的化合物。 本发明的测定提供了可用于检测促进（增强）或抑制hENaC功能的化合物的强壮屏幕。 增强或阻断人类ENaC通道活性的化合物应该调节人体的咸味。