公开(公告)号：US5491709A

公开(公告)日：1996-02-13

申请号：US106700

申请日：1993-08-16

申请人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

发明人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3407

摘要： In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.

摘要翻译： 在根据本发明的半导体激光器件中，包覆层包括第一覆盖层，其每一个具有比有源层更大的带隙，并且具有0.003至0.3μm的厚度，以及第二覆盖层具有 比有源层​​低的折射率，并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中，第一覆盖层将载流子限制在有源层中，而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成，所以载流子由于其隧道现象而难以从有源层向外移动，并且即使其晶格常数稍微不同，第一覆层可以是晶格 与底物匹配。 为此，可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。

公开(公告)号：US06650683B2

公开(公告)日：2003-11-18

申请号：US10228217

申请日：2002-08-27

申请人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

发明人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

IPC分类号： H01S5183

CPC分类号： H01S5/18394 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/18388 ,  H01S2301/166 ,  H01S2301/18

摘要： The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.

摘要翻译： 本发明提供一种表面发射半导体激光器，包括：半导体衬底，其上依次层叠有下层多层反射镜，有源层区域和上层多层反射镜，其与下层多层反射镜一起贡献 形成一个空腔; 上电极，其设置在所述上​​多层反射镜的上层上，并且设置有形成在所述有源层区域处产生的激光束的发射区域的孔; 以及电流限制部分，其设置在所述上​​电极和所述下多层反射镜之间，并且设置有形成电流路径的孔; 其中确定上限电极的孔径和电流限制部分的孔径直径，使得激光束的高阶横向模式中的空腔的光学损耗与腔室的光损耗之差 激光束的基本横向模式变为最大值附近的值，并且抑制高阶横向模式，并且形成在上电极中形成的孔和电流限制部的孔中的至少一个 成为具有相对于平面中彼此正交的任意两个轴向方向的长轴和短轴的双重对称构型。

公开(公告)号：US06529541B1

公开(公告)日：2003-03-04

申请号：US09714980

申请日：2000-11-20

申请人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

发明人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

IPC分类号： H01S5183

CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/18388 ,  H01S2301/166

摘要： A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.

摘要翻译： 一种易于制造且具有高强度基本横向模式光输出功率的表面发射半导体激光器。 表面发射半导体激光器具有半导体衬底，其上依次层叠下n型DBR层，有源层区域，上p型DBR层，作为上层n型DBR层的上层的p侧电极， 型的DBR层，并且作为设置有形成激光束的发射区域的孔的上电极和通过氧化形成的电流限制部分起作用。 基于对应于p侧电极的区域中的空腔的反射率，确定孔的金属孔直径（Wmetal）和电流限制部分的直径（Woxide），使得光学 在激光束的高阶横向模式中的腔的损失和激光束的基本横向模式中的空腔的光学损耗变大。

公开(公告)号：US5963242A

公开(公告)日：1999-10-05

申请号：US739220

申请日：1996-10-29

申请人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

发明人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  B41J2/435 ,  B41J2/47

CPC分类号： B41J2/45

摘要： An image recording apparatus has an array light source having a plurality of light-emitting elements arrayed in a predetermined density; a photosensitive member exposed to light beams emitted from the plural light-emitting elements so that images are recorded by fixing a traveling path of the light beams from the plural light-emitting elements to the photosensitive member and by moving the photosensitive member relative to the array light source; a beam-converging unit which intercrosses a bundle of the light beams emitted from the light-emitting elements onto a beam-conversion point; and an focusing unit disposed between the beam-converging unit and the photosensitive member, which images the light beams emitted from the plural of light-emitting elements and intercrossed by the beam-converging unit onto the photosensitive member.

摘要翻译： 一种图像记录装置，具有排列成规定密度的多个发光元件的阵列光源; 一个感光元件暴露于从多个发光元件发射的光束上，使得通过将来自多个发光元件的光束的行进路径固定在感光元件上并通过使感光元件相对于阵列移动来记录图像 光源; 光束会聚单元，其将从发光元件发射的光束交叉到光束转换点; 以及设置在所述光束会聚单元和所述感光构件之间的聚焦单元，其对从所述多个发光元件发射的光束进行成像，并且通过所述光束会聚单元与所述感光构件交叉。

公开(公告)号：US5563901A

公开(公告)日：1996-10-08

申请号：US420822

申请日：1995-04-12

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/18 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/42 ,  H01S5/18

摘要： In a semiconductor laser array in which a semiconductor laser element having a horizontal-direction cavity, and plural outer inclined reflecting mirrors capable of reflecting laser light projected from the semiconductor laser element along a specific direction are integrated on a semiconductor substrate in a monolithic form, these outer inclined reflecting mirrors are positioned adjacent to each other, and also are arranged in such a manner that a distance between the adjoining horizontal-direction cavities becomes longer while being located apart from said outer inclined reflecting mirrors.

摘要翻译： 在半导体激光器阵列中，具有水平方向腔的半导体激光器元件和能够反射沿着特定方向从半导体激光元件投影的激光的多个外倾斜反射镜以整体形式集成在半导体衬底上， 这些外倾斜反射镜彼此相邻地定位，并且还布置成使得相邻的水平方向空腔之间的距离变得更长，同时与所述外倾斜反射镜分开。

公开(公告)号：US5809052A

公开(公告)日：1998-09-15

申请号：US731750

申请日：1996-10-18

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/08

CPC分类号： H01S5/4031 ,  H01S5/0021 ,  H01S5/06216

摘要： A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0

摘要翻译： 一种用于驱动具有布置在基底构件上的多个发光点的半导体激光器阵列的半导体激光阵列驱动方法。 半导体激光阵列驱动方法具有通过满足不等式的脉冲宽度和占空比的驱动脉冲电流来驱动多个发光点的步骤：DELTA T1 / DELTA T0 <+ E，fra 1/2 + EE 其中，当使用连续电流以连续驱动模式驱动半导体激光器阵列时，DELTA T0是发光点的有源层中的温度升高，并且DELTA T1是发光的有源层中的温度升高 当使用脉冲电流以脉冲驱动模式驱动半导体激光器阵列时的点。 在半导体激光器阵列驱动方法中，多个发光点由占空比为0.4以下的驱动脉冲电流驱动，满足不等式：y <3.1exp（-8.9x），其中x是占空系数 y是脉冲宽度（mu s）。

公开(公告)号：US5648295A

公开(公告)日：1997-07-15

申请号：US687938

申请日：1996-07-29

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US20050180688A1

公开(公告)日：2005-08-18

申请号：US11041442

申请日：2005-01-25

申请人： Osamu Ueno ,  Masao Funada ,  Masaaki Miura ,  Tsutomu Hamada ,  Shinya Kyozuka ,  Osamu Takanashi ,  Hideo Nakayama ,  Jun Sakurai ,  Akira Sakamoto

发明人： Osamu Ueno ,  Masao Funada ,  Masaaki Miura ,  Tsutomu Hamada ,  Shinya Kyozuka ,  Osamu Takanashi ,  Hideo Nakayama ,  Jun Sakurai ,  Akira Sakamoto

IPC分类号： G02B6/26 ,  G02B6/42 ,  H01S5/022 ,  H01S5/183

CPC分类号： G02B6/4206 ,  G02B6/4202 ,  G02B6/4292

摘要： The first and second light-emitting regions are provided on the light source. When the first optical fiber having the first core diameter is connected, the light emitted from the first light-emitting region enters the first core. When the second optical fiber having a greater core diameter than the first core diameter is connected, the lights emitted from the first and second light-emitting regions enter the second core. It is thus possible to connect the optical transmission device with multiple optical fibers having different core diameters. It is thus possible to provide the optical transmission device and the communication device, which are low in cost and high in convenience.

摘要翻译： 第一发光区域和第二发光区域设置在光源上。 当连接具有第一纤芯直径的第一光纤时，从第一发光区域发射的光线进入第一芯体。 当连接具有比第一纤芯直径更大的芯径的第二光纤时，从第一和第二发光区域发射的光进入第二芯。 因此，可以将光传输装置与具有不同芯径的多根光纤连接。 因此，可以提供成本低，便利性高的光传输装置和通信装置。

公开(公告)号：US07460749B2

公开(公告)日：2008-12-02

申请号：US11041442

申请日：2005-01-25

申请人： Osamu Ueno ,  Masao Funada ,  Masaaki Miura ,  Tsutomu Hamada ,  Shinya Kyozuka ,  Osamu Takanashi ,  Hideo Nakayama ,  Jun Sakurai ,  Akira Sakamoto

发明人： Osamu Ueno ,  Masao Funada ,  Masaaki Miura ,  Tsutomu Hamada ,  Shinya Kyozuka ,  Osamu Takanashi ,  Hideo Nakayama ,  Jun Sakurai ,  Akira Sakamoto

IPC分类号： G02B6/32 ,  F21S13/14 ,  G02B6/30 ,  G02B6/36

CPC分类号： G02B6/4206 ,  G02B6/4202 ,  G02B6/4292

摘要： The first and second light-emitting regions are provided on the light source. When the first optical fiber having the first core diameter is connected, the light emitted from the first light-emitting region enters the first core. When the second optical fiber having a greater core diameter than the first core diameter is connected, the lights emitted from the first and second light-emitting regions enter the second core. It is thus possible to connect the optical transmission device with multiple optical fibers having different core diameters. It is thus possible to provide the optical transmission device and the communication device, which are low in cost and high in convenience.

摘要翻译： 第一发光区域和第二发光区域设置在光源上。 当连接具有第一纤芯直径的第一光纤时，从第一发光区域发射的光线进入第一芯体。 当连接具有比第一纤芯直径更大的芯径的第二光纤时，从第一和第二发光区域发射的光进入第二芯。 因此，可以将光传输装置与具有不同芯径的多根光纤连接。 因此，可以提供成本低，便利性高的光传输装置和通信装置。

公开(公告)号：US09166370B2

公开(公告)日：2015-10-20

申请号：US13456909

申请日：2012-04-26

申请人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

发明人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/10 ,  H01S5/32 ,  H01S5/20

CPC分类号： H01S5/18358 ,  H01S5/1039 ,  H01S5/18311 ,  H01S5/209 ,  H01S5/3211

摘要： A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.

摘要翻译： 垂直腔表面发射激光器包括第一半导体多层反射器，谐振器和第二半导体多层反射器。 第一半导体多层反射器形成在基板上，并且通过堆叠具有较高折射率的高折射率层和折射率相对较低的低折射率层而构成。 谐振器包括形成在第一半导体多层反射器上的有源层。 第二半导体多层反射器通过层叠高折射率层和低折射率层而构成。 谐振器包括垂直于有源层设置的一对间隔层和形成在一对间隔层的一侧的谐振器延伸区域。 谐振器延伸区域包含其中具有晶体缺陷的能级高于没有晶体缺陷的一般能级的材料。