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45 条记录 (耗时 0.039 秒)

    Semiconductor transducer
    11.
    发明授权
    Semiconductor transducer 失效
    半导体传感器

    公开(公告)号：US4151502A

    公开(公告)日：1979-04-24

    申请号：US787841

    申请日：1977-04-15

    申请人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

    发明人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

    IPC分类号： G01B7/16 ,  G01L1/22 ,  G01L9/00 ,  H01L29/84 ,  G01B11/16

    CPC分类号： G01L1/2293 ,  G01L9/0002 ,  H01L29/84 ,  Y10S73/04 ,  Y10T29/49103

    摘要： A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through the alloy material. The insulating layer is extended to a side surface of the mono-crystalline semiconducting material thereby to cover the same side.

    摘要翻译： 半导体换能器包括由单晶半导体材料构成的半导体应变计和形成在单晶半导体材料的第一主表面中的应变感测区域，以及通过合金材料耦合到半导体应变计的应变测量构件 。 电绝缘层连接到单晶半导体材料的第二主表面，该第二主表面通过合金材料耦合到应变测量部件。 绝缘层延伸到单晶半导体材料的侧表面，从而覆盖同一侧。

    Method of making silicon diaphragm pressure sensor
    13.
    发明授权
    Method of making silicon diaphragm pressure sensor 失效
    制造硅膜压力传感器的方法

    公开(公告)号：US4670969A

    公开(公告)日：1987-06-09

    申请号：US694990

    申请日：1985-01-25

    申请人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    发明人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01P15/08 ,  H01L21/428

    CPC分类号： G01L9/0042 ,  G01P15/0802 ,  G01P2015/084 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S148/168 ,  Y10T29/42 ,  Y10T29/49103

    摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

    摘要翻译： 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

    Semiconductor pressure transducer
    14.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号：US4065971A

    公开(公告)日：1978-01-03

    申请号：US701531

    申请日：1976-07-01

    申请人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

    发明人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054

    摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.

    摘要翻译： 半导体压力传感器包括其外边缘固定的单晶半导体膜片。 当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。 隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。 位于彼此靠近的单个组的电阻以桥的形式组合。 形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。 然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。

    Semiconductor-type pressure transducer
    16.
    发明授权
    Semiconductor-type pressure transducer 失效
    半导体式压力传感器

    公开(公告)号：US4604899A

    公开(公告)日：1986-08-12

    申请号：US597753

    申请日：1984-04-06

    申请人： Kazuji Yamada ,  Hideo Sato ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

    发明人： Kazuji Yamada ,  Hideo Sato ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

    IPC分类号： G01R27/02 ,  G01B7/16 ,  G01D3/028 ,  G01L1/22 ,  G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L19/04

    CPC分类号： G01L1/2281 ,  G01L9/065

    摘要： A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit.

    摘要翻译： 公开了一种半导体型压力传感器，其中通过使用至少包括用外力改变的量规电阻器的桥式电路将压力变化检测为电阻变化。 每个规格电阻由半导体的PN结制成。 压力传感器还包括放大系数补偿器，用于抵消构成桥式电路的量规电阻器的温度变化对放大电路的放大系数的影响，用于放大桥式电路的输出。

    Pressure transducer with temperature compensation circuit
    17.
    发明授权
    Pressure transducer with temperature compensation circuit 失效
    带温度补偿电路的压力传感器

    公开(公告)号：US4556807A

    公开(公告)日：1985-12-03

    申请号：US522227

    申请日：1983-08-11

    申请人： Kazuji Yamada ,  Hideo Sato ,  Kazuo Kato ,  Takao Sasayama ,  Kanji Kawakami ,  Ryosaku Kanzawa

    发明人： Kazuji Yamada ,  Hideo Sato ,  Kazuo Kato ,  Takao Sasayama ,  Kanji Kawakami ,  Ryosaku Kanzawa

    IPC分类号： G01L9/04 ,  G01B7/16 ,  G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054 ,  G01L9/065 ,  Y10S323/907

    摘要： A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors in bridge formed on a thin diaphragm of a semiconductor substrate, and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source. A temperature compensation circuit is additionally provided to drive the bridge circuit by the difference between the temperature-dependent current and the current proportional to the temperature characteristic in a constant-current driving mode, and by a voltage proportional to the current difference when the output of the bridge circuit is connected to an amplifier whose gain is dependent on temperature.

    摘要翻译： 公开了一种压力传感器，包括压电传感器部分，该压力传感器部分具有形成在半导体衬底的薄膜上的桥中的量规电阻器，以及连接到用于驱动压力传感器的压力传感器部分的电源。 电源包括用于提供等效于与绝对温度几乎成比例的电流和独立于温度的电流的和的温度相关电流的第一电流源，以及用于将大体上与温度特性成比例的电流吸收的第二电流源 的电流从第一个电流源的电流。 另外提供温度补偿电路以通过温度相关电流和与恒定电流驱动模式中的温度特性成比例的电流之间的差异来驱动桥式电路，并且通过与当电流差异的电流成比例的电压来驱动桥式电路 桥接电路连接到增益取决于温度的放大器。

    Pressure transducer using integrated circuit elements
    18.
    发明授权
    Pressure transducer using integrated circuit elements 失效
    使用集成电路元件的压力传感器

    公开(公告)号：US4558238A

    公开(公告)日：1985-12-10

    申请号：US536870

    申请日：1983-09-29

    申请人： Kazuji Yamada ,  Hideo Sato ,  Yukitaka Kitadate ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

    发明人： Kazuji Yamada ,  Hideo Sato ,  Yukitaka Kitadate ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

    IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/065 ,  Y10S323/907

    摘要： A pressure transducer comprises a pressure sensor including a bridge connection of gauging resistors formed on a semiconductor substrate, and a power supply connected to the pressure sensor for driving it and basically acting as a constant current source. The power supply includes at least two transistors formed on the semiconductor substrate. One of the transistors provides a collector current which is less in temperature-dependency relative to that of the other transistor, and the other transistor has a collector circuit connected to the pressure sensor and provides a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current. A ratio of the temperature-dependent current to the temperature-independent current is adjusted by selecting operation characteristics of the two transistors such that a temperature characteristic of the collector current of the other transistor is substantially inversely proportional to a temperature characteristic of the output of the pressure sensor when it is driven with a constant voltage.

    摘要翻译： 压力传感器包括压力传感器，该压力传感器包括形成在半导体衬底上的测量电阻器的桥连接器，以及连接到压力传感器的电源，用于驱动它并基本上作为恒定电流源。 电源包括形成在半导体衬底上的至少两个晶体管。 晶体管中的一个提供了相对于另一个晶体管的温度依赖性较小的集电极电流，另一个晶体管具有连接到压力传感器的集电极电路，并且提供对应于基本上温度相关的总和的集电极电流， 依赖电流和基本上温度无关的电流。 通过选择两个晶体管的工作特性来调节温度依赖电流与独立于温度的电流的比例，使得另一个晶体管的集电极电流的温度特性与输出的温度特性成反比 压力传感器用恒定电压驱动时。