公开(公告)号：US5097318A

公开(公告)日：1992-03-17

申请号：US331802

申请日：1989-04-03

申请人： Akira Tanaka ,  Kazuji Yamada ,  Hirokazu Inoue ,  Hideo Arakawa ,  Masahide Okamoto

发明人： Akira Tanaka ,  Kazuji Yamada ,  Hirokazu Inoue ,  Hideo Arakawa ,  Masahide Okamoto

IPC分类号： H01L23/538 ,  H01L23/04 ,  H01L23/057 ,  H01L23/12 ,  H01L23/467 ,  H01L23/498 ,  H01L23/50

CPC分类号： H01L23/49822 ,  H01L23/057 ,  H01L23/467 ,  H01L23/49838 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30107

摘要： A cavity-down type package for a semiconductor device comprises an insulating base substrate on which the semiconductor device and another insulating cap substrate with plural outer connection terminals on its outer surface and with electrodes provided on conductive layers for electric conduction on its inner surface. The electrodes on the insulating base substrate and those on the insulating cap substrate are connected with each other by using conductive material such as bumps.

摘要翻译： 一种用于半导体器件的降空型封装，包括其上安装有半导体器件（1）的绝缘基底（6）和在其外表面上具有多个外连接端子（5）的另一绝缘帽衬底（8） 其中电极（11）设置在导电层（4）上，用于在其内表面上导电。 绝缘基底基板上的电极和绝缘帽基板（8）上的电极通过诸如凸块的导电材料相互连接。

公开(公告)号：US06563225B2

公开(公告)日：2003-05-13

申请号：US10083543

申请日：2002-02-27

申请人： Tasao Soga ,  Toshiharu Ishida ,  Kazuma Miura ,  Hanae Hata ,  Masahide Okamoto ,  Tetsuya Nakatsuka

发明人： Tasao Soga ,  Toshiharu Ishida ,  Kazuma Miura ,  Hanae Hata ,  Masahide Okamoto ,  Tetsuya Nakatsuka

IPC分类号： H01L2348

CPC分类号： H01L24/27 ,  B22F1/0003 ,  B23K1/0004 ,  B23K35/0244 ,  B23K35/282 ,  B23K2101/40 ,  C22C18/00 ,  C22C18/04 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29218 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29411 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29447 ,  H01L2224/29455 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/751 ,  H01L2224/75251 ,  H01L2224/75745 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/0135 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/01051 ,  H01L2924/01031 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： There is provided an electronic device comprising at least one electronic part and a substrate on which said electronic part is mounted, said electronic part and said substrate being bonded by a joint comprising a phase of Al particles and another phase of a Al—Mg—Ge—Zn alloy, said Al particles being connected to each other by said Al—Mg—Ge—Zn alloy phase.

公开(公告)号：US08525330B2

公开(公告)日：2013-09-03

申请号：US13382633

申请日：2010-08-30

申请人： Masahide Okamoto ,  Osamu Ikeda ,  Yuki Murasato

发明人： Masahide Okamoto ,  Osamu Ikeda ,  Yuki Murasato

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C22C18/04 ,  B22F2998/00 ,  B23K1/0016 ,  B23K2101/42 ,  B32B15/017 ,  C22C21/00 ,  C22C21/06 ,  H01L23/04 ,  H01L23/3107 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29147 ,  H01L2224/29211 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/49826 ,  Y10T428/12736 ,  B22F7/062 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01083 ,  H01L2924/01031 ,  H01L2924/01082 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/05599

摘要： Provided is a connecting part for a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces. The connecting part has an Al-based layer and first and second Zn-based layers on main surfaces of the Al-based layer, a thickness ratio of the Al-based layer relative to the Zn-based layers being less than 0.59.

摘要翻译： 提供了一种半导体器件的连接部件，其包括半导体元件，框架和将半导体元件和框架彼此连接的连接部分，其中连接部分和半导体元件之间的界面和 连接部和框架分别具有比各界面的整个面积大于0％且小于5％的Al氧化物膜的面积。 连接部分在Al基层的主表面上具有Al基层和第一和第二Zn基层，Al基层相对于Zn基层的厚度比小于0.59。

公开(公告)号：US07722962B2

公开(公告)日：2010-05-25

申请号：US10451610

申请日：2001-12-19

申请人： Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Kanko Ishida, legal representative ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

发明人： Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

IPC分类号： H05K1/02 ,  H05K1/00 ,  B32B15/20

CPC分类号： H01L24/01 ,  B23K3/063 ,  B23K2101/40 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29076 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K3/3478 ,  H05K2201/0215 ,  H05K2203/0143 ,  H05K2203/0278 ,  H05K2203/0405 ,  H05K2203/0425 ,  Y10T428/12528 ,  Y10T428/12708 ,  Y10T428/12903 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298

摘要： A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.

摘要翻译： 由包含作为金属颗粒的Cu等颗粒和作为焊料颗粒的Sn颗粒通过轧制形成的焊料箔适合于在温度分级粘合中的高温侧的焊料接合，以及通过使用制造的半导体器件和电子器件 这种焊接结合具有突出的机械特性的可靠性等。

公开(公告)号：US06555052B2

公开(公告)日：2003-04-29

申请号：US09799486

申请日：2001-03-07

申请人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Masato Nakamura ,  Yuji Fujita ,  Toshiharu Ishida ,  Masahide Okamoto ,  Koji Serizawa ,  Toshihiro Hachiya ,  Hideki Mukuno

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Masato Nakamura ,  Yuji Fujita ,  Toshiharu Ishida ,  Masahide Okamoto ,  Koji Serizawa ,  Toshihiro Hachiya ,  Hideki Mukuno

IPC分类号： C22C1302

CPC分类号： H01L24/32 ,  B23K35/262 ,  B23K2101/36 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/1319 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/20106 ,  H05K3/3463 ,  Y10T428/12528 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199

摘要： An electronic equipment is capable of improving falling down shock resistance or impact resistance in an electronic equipment and of improving reliability of a solder joint in a semiconductor device die-bonded Si chip or the like to which thermal shock causing large deformation may act, bump mounting of BGA, CSP, WPP, flip-chip and so forth, a power module acting large stress and so forth. The electronic equipment has a circuit board and an electronic parts to be electrically connected to an electrode of the circuit board. The electrode of the circuit board and an electrode of the electronic part are connected by soldering using a lead free solder consisted of Cu: 0˜2.0 mass %, In: 0.1˜10 mass %, and Sn: remaining amount.

公开(公告)号：US6118671A

公开(公告)日：2000-09-12

申请号：US103812

申请日：1998-06-24

申请人： Hirayoshi Tanei ,  Shoichi Iwanaga ,  Masahide Okamoto ,  Masato Nakamura ,  Kousaku Morita ,  Shousaku Ishihara ,  Fumikazu Tagami ,  Norio Sengoku ,  Tsuyoshi Fujita ,  Fumiyuki Kobayashi

发明人： Hirayoshi Tanei ,  Shoichi Iwanaga ,  Masahide Okamoto ,  Masato Nakamura ,  Kousaku Morita ,  Shousaku Ishihara ,  Fumikazu Tagami ,  Norio Sengoku ,  Tsuyoshi Fujita ,  Fumiyuki Kobayashi

IPC分类号： C03C3/089 ,  C03C8/16 ,  C03C14/00 ,  C03C17/06 ,  H01L21/48 ,  H01L23/15 ,  H05K1/03 ,  H05K1/11

CPC分类号： C03C14/004 ,  C03C17/06 ,  C03C3/089 ,  C03C8/16 ,  H01L21/4807 ,  H01L23/15 ,  C03C2217/253 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

摘要翻译： 陶瓷电路基板，其在900〜1050℃下烧结并具有低的相对介电常数，与硅相当的热膨胀系数和高的弯曲强度，以及制造方法是通过使用软化点为 850至1100℃，即具有包括在图1中的区域中的组成的玻璃。 图1（SiO 2-B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆数表示组成数），用连接表示第一，第三，第十，第十一， 和第四组分分别作为原料。

公开(公告)号：US08389854B2

公开(公告)日：2013-03-05

申请号：US12602385

申请日：2008-10-14

申请人： Masahide Okamoto ,  Osamu Ikeda

发明人： Masahide Okamoto ,  Osamu Ikeda

IPC分类号： H01B7/00

CPC分类号： H01R13/03 ,  B32B15/01 ,  Y10T428/12646 ,  Y10T428/12722

摘要： A Ni plating is applied on a base metal in a metal strip form, and a brightener-free Sn-(1 to 4% by mass)Cu plating is applied on the Ni plating. The metal strip is heat-treated at a temperature at or above the melting point (solidus line) of a Sn-(1 to 4% by mass)Cu alloy to form a Cu-Sn compound layer or a Cu—Ni—Sn-compound layer on the Ni plating layer and a Sn layer or a Sn—Cu-ally layer on the Cu—Sn compound layer or the Cu—Ni—Sn-compound layer. The metal strip is further fabricated into a connector.

摘要翻译： 以金属带状形式将Ni镀覆在基体金属上，并在Ni镀层上施加不添加光亮剂的Sn（1〜4质量％）Cu电镀。 在Sn-（1〜4质量％）Cu合金的熔点（固相线）以上的温度下对金属带进行热处理，形成Cu-Sn化合物层或Cu-Ni-Sn- Ni镀层上的化合物层和Cu-Sn化合物层或Cu-Ni-Sn化合物层上的Sn层或Sn-Cu-烯层。 金属条进一步制造成连接器。

公开(公告)号：US08356742B2

公开(公告)日：2013-01-22

申请号：US13228169

申请日：2011-09-08

申请人： Osamu Ikeda ,  Masahide Okamoto

发明人： Osamu Ikeda ,  Masahide Okamoto

IPC分类号： B23K31/00 ,  B23K35/12

CPC分类号： H01L23/49582 ,  B23K20/02 ,  B23K20/04 ,  B23K35/0238 ,  B32B15/017 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T428/12736 ,  Y10T428/31678 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, a high connection reliability can be achieved when an Al series alloy layer is left after the connection, since the soft Al thereof functions as a stress buffer material.

摘要翻译： 在本发明的连接材料中，在Al系合金层的最表面上形成Zn系合金层。 特别地，在连接材料中，Al系合金层的Al含量为99〜100重量％。 Zn系合金层的％或Zn含量为90〜100重量％。 ％。 通过使用该连接材料，可以抑制在连接时在连接材料的表面上形成Al氧化膜，并且可以获得优选的用Zn-Al合金不能获得的湿度。 此外，由于其软Al作为应力缓冲材料，所以在连接后留下Al系合金层时，可以实现高的连接可靠性。

公开(公告)号：US20100175908A1

公开(公告)日：2010-07-15

申请号：US12602385

申请日：2008-10-14

申请人： Masahide Okamoto ,  Osamu Ikeda

发明人： Masahide Okamoto ,  Osamu Ikeda

IPC分类号： H01B5/00 ,  B32B15/01 ,  B32B15/20 ,  B05D5/12

CPC分类号： H01R13/03 ,  B32B15/01 ,  Y10T428/12646 ,  Y10T428/12722

摘要： A Ni plating is applied on a base metal in a metal strip form, and a brightener-free Sn-(1 to 4% by mass)Cu plating is applied on the Ni plating. The metal strip is heat-treated at a temperature at or above the melting point (solidus line) of a Sn-(1 to 4% by mass)Cu alloy to form a Cu—Sn compound layer or a Cu—Ni—Sn-compound layer on the Ni plating layer and a Sn layer or a Sn—Cu-ally layer on the Cu—Sn compound layer or the Cu—Ni—Sn-compound layer. The metal strip is further fabricated into a connector. Thus, a metal strip, which has good soldability on a substrate, is free from the occurrence of whiskers at a terminal part during storage or upon fitting into FPC or FFC, and is necessary for a lead-free connector, can be realized.

摘要翻译： 以金属带状形式将Ni镀覆在基体金属上，并在Ni镀层上施加不添加光亮剂的Sn（1〜4质量％）Cu电镀。 在Sn-（1〜4质量％）Cu合金的熔点（固相线）以上的温度下对金属带进行热处理，形成Cu-Sn化合物层或Cu-Ni-Sn- Ni镀层上的化合物层和Cu-Sn化合物层或Cu-Ni-Sn化合物层上的Sn层或Sn-Cu-烯层。 金属条进一步制造成连接器。 因此，在基板上具有良好的可销售性的金属带在储存期间或在安装到FPC或FFC中时在端子部分没有出现晶须，并且可以实现无铅连接器所必需的。

公开(公告)号：US07579677B2

公开(公告)日：2009-08-25

申请号：US11585879

申请日：2006-10-25

申请人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

发明人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

IPC分类号： H01L23/495

CPC分类号： C22F1/08 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/3754 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.

摘要翻译： 在功率半导体装置中，功率半导体元件与镀镍的框架之间的接合部由层叠结构构成，该叠层结构由功率半导体元件侧构成，熔点为260℃以上的金属间化合物层， Cu层，熔点为260℃以上的金属层，Cu层和熔点为260℃以上的金属间化合物层。 接头的结构缓冲了在半导体元件和具有大的热膨胀系数差的框架的接合处由二次安装和温度循环产生的应力。