公开(公告)号：US08344604B2

公开(公告)日：2013-01-01

申请号：US12743092

申请日：2008-11-13

申请人： Kazuyoshi Torii ,  Naomichi Miyashita ,  Mamoru Musasa ,  Akira Suzuki ,  Tomoo Tanaka ,  Osamu Yoshimoto

发明人： Kazuyoshi Torii ,  Naomichi Miyashita ,  Mamoru Musasa ,  Akira Suzuki ,  Tomoo Tanaka ,  Osamu Yoshimoto

IPC分类号： H01T13/20 ,  H01T21/02

CPC分类号： H01T13/39

摘要： A precious metal tip on the side of a ground electrode is indirectly joined to the front end portion of the ground electrode via a mounting part interposed therebetween. The mounting part includes a base part and a protruding part. First, in the state where the precious metal tip is in contact with the protruding part, laser welding or the like is performed thereon to form a fused part and obtain a complex, and the base part is joined to a flat surface of the ground electrode by resistance welding. The grain size of grains of the mounting part in the vicinity of the of the fused part is greater than the grain size of the grain size of the grains thereof in the vicinity of the ground electrode, and the grain size of the grains of the flange part of the mounting part is smaller than the grain size of the grains of the protruding part.

摘要翻译： 接地电极侧的贵金属端头经由插入其间的安装部分间接地接合到接地电极的前端部。 安装部分包括基部和突出部。 首先，在贵金属端头与突出部接触的状态下，进行激光焊接等，形成熔融部，得到复合体，基部与接地电极的平坦面接合 通过电阻焊接。 熔融部附近的安装部的晶粒尺寸大于接地电极附近的晶粒的晶粒尺寸，凸缘的晶粒的粒径 安装部的一部分小于突出部的晶粒的粒径。

公开(公告)号：US20110163653A1

公开(公告)日：2011-07-07

申请号：US13062571

申请日：2009-09-09

申请人： Kazuyoshi Torii ,  Tomoo Tanaka ,  Akira Suzuki ,  Mamoru Musasa ,  Naomichi Miyashita ,  Osamu Yoshimoto

发明人： Kazuyoshi Torii ,  Tomoo Tanaka ,  Akira Suzuki ,  Mamoru Musasa ,  Naomichi Miyashita ,  Osamu Yoshimoto

IPC分类号： H01T13/20

CPC分类号： H01T13/39 ,  B23K35/322 ,  C22C5/04 ,  C22C19/058

摘要： A spark plug includes a cylindrical metal shell; a cylindrical insulator that is held in the metal shell; a center electrode; and a ground electrode that comprises a ground electrode main body part and a noble metal tip, a spark discharge gap being formed between the leading end of the center electrode and the noble metal tip wherein at least a portion of the ground electrode main body part, to which the noble metal tip is joined, is made of Ni alloy containing 12 to 35 mass % of Cr, 7 mass % or less of Fe, 0.5 to 5 mass % of Al, 0.3 to 5 mass % of Si and 50 mass % or more of the balance, and wherein the joined portion and the noble metal tip are joined by laser welding or electron beam welding.

摘要翻译： 火花塞包括圆柱形金属壳; 保持在金属外壳中的圆柱形绝缘体; 中心电极; 以及接地电极，其包括接地电极主体部分和贵金属电极头，在所述中心电极的前端与所述贵金属电极头之间形成火花放电间隙，其中所述接地电极主体部分的至少一部分， 贵金属电极头接合的Ni合金由含有12〜35质量％的Cr，7质量％以下的Fe，0.5〜5质量％的Al，0.3〜5质量％的Si和50质量％的Ni合金构成， 或更多的平衡，并且其中通过激光焊接或电子束焊接将接合部分和贵金属电极头接合。

公开(公告)号：US07630043B2

公开(公告)日：2009-12-08

申请号：US11777853

申请日：2007-07-13

申请人： Takashi Hattori ,  Daisuke Sonoda ,  Daisuke Ryuzaki ,  Kazuyoshi Torii

发明人： Takashi Hattori ,  Daisuke Sonoda ,  Daisuke Ryuzaki ,  Kazuyoshi Torii

IPC分类号： G02F1/1333

CPC分类号： G02F1/136213 ,  G02F1/134363 ,  G02F2001/133357 ,  G02F2202/38 ,  G02F2202/42

摘要： A liquid crystal display improved with the opening ratio and increased for the storage capacitance, in which a gate insulating film, a gate electrode, an interlayer insulating film, an image line and a source electrode are stacked in this order formed in the layer above an active device formed to a first substrate, the interlayer insulating film is formed with a coatable transparent insulating film having a specific dielectric constant of 4.0 or higher at least containing high dielectric fine particle or sol-gel, a first through hole is formed in the gate insulating film, a second through hole is formed to the interlayer insulating film in the inside of the first through hole, the source electrode is electrically connected with the active device by way of the second through hole, and the storage capacitance is constituted by the gate electrode, the image line, the source electrode, and the interlayer insulating film.

摘要翻译： 液晶显示器的开口率提高，并且对于其中栅极绝缘膜，栅极电极，层间绝缘膜，图像线和源极电极以此顺序堆叠形成在上面的层中的存储电容而增加 有源器件形成于第一衬底上，层间绝缘膜由至少包含高电介质微粒或溶胶 - 凝胶的比介电常数为4.0以上的可涂覆透明绝缘膜形成，在栅极中形成第一通孔 绝缘膜，在第一通孔的内部形成有层间绝缘膜的第二贯通孔，源电极通过第二通孔与有源器件电连接，保持电容由栅极构成 电极，图像线，源电极和层间绝缘膜。

公开(公告)号：US20070216275A1

公开(公告)日：2007-09-20

申请号：US11687828

申请日：2007-03-19

申请人： Kazuyoshi Torii ,  Kazumasa Yoshida ,  Wataru Matsutani

发明人： Kazuyoshi Torii ,  Kazumasa Yoshida ,  Wataru Matsutani

IPC分类号： H01T13/20

CPC分类号： H01T21/02 ,  H01T13/20 ,  H01T13/36 ,  H01T13/39

摘要： A spark plug 100 comprised of a metal shell 1, an insulator 2, a center electrode 3 and a ground electrode 4. A rear-end face of the ground electrode 4 is welded to a front-end face of the metal shell 1, and a bent portion 5 located at the intermediated position in the longitudinal direction is bent toward the center of the spark plug 100. The ground electrode 4 assumes a circular-shape with a diameter of 2 mm or less whereby an inflow of an air-fuel mixture is not disturbed even when the air-fuel mixture directly flows into a back face of the ground electrode 4. The ground electrode 4 is comprised of an outer layer 4A made of a nickel alloy and an inner layer 4B made of pure copper with an excellent thermal conductivity, in which a ratio of a cross-sectional area of the inner layer 4B to the entire cross-sectional area of the ground electrode 4 is 10% or more to 35% or less. Thus, the spark plug 100 which is excellent in heat sinking ability and can prevent a spring back phenomenon due to a difference in a coefficient of thermal expansion.

摘要翻译： 由金属壳1，绝缘体2，中心电极3和接地电极4构成的火花塞100.接地电极4的后端面焊接在金属壳1的前端面上， 位于中间位置的弯曲部分5朝向火花塞100的中心弯曲。接地电极4呈直径为2mm或更小的圆形，由此空气 - 燃料混合物 即使当空气 - 燃料混合物直接流入接地电极4的背面时也不会受到干扰。接地电极4包括由镍合金制成的外层4A和由纯铜制成的内层4B， 内层4B的截面积与接地电极4的整个横截面积的比率为10％以上35％以下的良好的导热性。 因此，具有散热能力优异且能够防止由于热膨胀系数的差异引起的弹回现象的火花塞100。

公开(公告)号：US20070092661A1

公开(公告)日：2007-04-26

申请号：US11583882

申请日：2006-10-20

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： C09K19/00

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US20060214198A1

公开(公告)日：2006-09-28

申请号：US11385885

申请日：2006-03-22

申请人： Takeo Matsuki ,  Kazuyoshi Torii

发明人： Takeo Matsuki ,  Kazuyoshi Torii

IPC分类号： H01L29/76

CPC分类号： H01L29/4983 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/3185 ,  H01L21/76829 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of this invention is to prevent the NBTI degradation which may occur following the recent progress in miniaturization of the semiconductor device. By using a silicon nitride film, in which a concentration of Si—H bonds is not greater than 1×1021 cm−3, at least for a liner film or a second sidewall insulating film, the NBTI lifetime of the p-type MOS FET can be improved to be 1×109 seconds, which secures sufficient lifetime for the semiconductor integrated circuit device.

摘要翻译： 本发明的目的是防止在半导体器件的最小化的最新进展之后可能发生的NBTI劣化。 通过使用其中Si-H键的浓度不大于1×10 -2 cm -3的氮化硅膜，至少对于衬垫膜或第二侧壁 绝缘膜，p型MOS FET的NBTI寿命可以提高到1×10 9秒，这为半导体集成电路器件确保了足够的寿命。

公开(公告)号：US07034369B2

公开(公告)日：2006-04-25

申请号：US10913551

申请日：2004-08-09

申请人： Tsunetoshi Arikado ,  Takaaki Kawahara ,  Kazuyoshi Torii ,  Hiroshi Kitajima ,  Seiichi Miyazaki

发明人： Tsunetoshi Arikado ,  Takaaki Kawahara ,  Kazuyoshi Torii ,  Hiroshi Kitajima ,  Seiichi Miyazaki

IPC分类号： H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

摘要： A gate insulating film on a silicon substrate includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.

摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜含有过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。 此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小 从这些界面，并成为高k电影中心部分中最低的。

公开(公告)号：US20050249876A1

公开(公告)日：2005-11-10

申请号：US11034940

申请日：2005-01-14

申请人： Takaaki Kawahara ,  Kazuyoshi Torii

发明人： Takaaki Kawahara ,  Kazuyoshi Torii

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/31 ,  H01L21/316 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45514 ,  C23C16/45531 ,  C23C16/45561 ,  C30B25/14

摘要： An atomic layer deposition (ALD) apparatus capable of forming a conformal ultrathin-film layer with enhanced step coverage is disclosed. The apparatus includes an ALD reactor supporting therein a wafer, and a main pipe coupled thereto for constant supply of a carrier gas. This pipe has two parallel branch pipes. Raw material sources are connected by three-way valves to one branch pipe through separate pipes, respectively. Similarly, oxidant/reducer sources are coupled by three-way valves to the other branch pipe via independent pipes. ALD works by introducing one reactant gas at a time into the reactor while being combined with the carrier gas. The gas is “chemisorped” onto the wafer surface, creating a monolayer deposited. During the supply of a presently selected material gas from its source to a corresponding branch pipe, this gas passes through its own pipe independently of the others. An ALD method is also disclosed.

摘要翻译： 公开了能够形成具有增强的阶梯覆盖层的保形超薄膜层的原子层沉积（ALD）装置。 该装置包括支撑晶片的ALD反应器和与其连接的主管以恒定地供应载气。 该管道有两根平行的支管。 原料源分别通过三通阀连接到一根分支管上。 类似地，氧化剂/还原剂源通过三通阀通过独立管道连接到另一支管。 ALD通过在与载气组合的同时将一个反应物气体一次引入反应器中起作用。 气体被“化学吸附”到晶片表面上，产生沉积的单层。 在将来自其源的目前选择的材料气体供应到相应的分支管道期间，该气体独立于其它管道通过其自身的管道。 还公开了一种ALD方法。

公开(公告)号：US20050074936A1

公开(公告)日：2005-04-07

申请号：US10968077

申请日：2004-10-20

申请人： Kazuyoshi Torii ,  Hiroshi Miki ,  Yoshihisa Fujisaki

发明人： Kazuyoshi Torii ,  Hiroshi Miki ,  Yoshihisa Fujisaki

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/00

CPC分类号： H01L28/56 ,  H01L21/28568 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/75

摘要： A method of fabricating a semiconductor device, is provided including forming an insulating film having an opening portion on a substrate having a transistor, filling a conductive film in the opening portion, forming a reaction barrier film functioning to prevent a reaction on the insulating film, and forming a diffusion barrier film on the conductive film. Next a first electrode is formed on the diffusion barrier film, a ferroelectric film, including at least one element of the group consisting of lead, barium and bismuth is formed on the first electrode after the step of forming the reaction barrier film, and a second electrode is formed on the ferroelectric film.

摘要翻译： 提供一种制造半导体器件的方法，包括：在具有晶体管的衬底上形成具有开口部分的绝缘膜，在开口部分填充导电膜，形成用于防止对绝缘膜发生反应的反应阻挡膜， 并在导电膜上形成扩散阻挡膜。 接下来，在扩散阻挡膜上形成第一电极，在形成反应阻挡膜的步骤之后，在第一电极上形成包括由铅，钡和铋组成的组中的至少一种元素的铁电体膜，第二电极形成第二电极 电极形成在铁电体膜上。

公开(公告)号：US06342412B1

公开(公告)日：2002-01-29

申请号：US09459921

申请日：1999-12-14

申请人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

发明人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

IPC分类号： H01L21336

CPC分类号： H01L27/10852 ,  G03F7/70333 ,  G03F9/70 ,  H01L21/28512 ,  H01L21/76 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L23/291 ,  H01L23/4951 ,  H01L23/5258 ,  H01L23/532 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0922 ,  H01L27/0928 ,  H01L27/10808 ,  H01L28/40 ,  H01L2223/54473 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10S257/90 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.