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75 条记录 (耗时 0.046 秒)

    Bus bridge
    11.
    发明申请
    Bus bridge 有权

    公开(公告)号：US20060047882A1

    公开(公告)日：2006-03-02

    申请号：US11209511

    申请日：2005-08-23

    申请人： Kenichi Kawaguchi

    发明人： Kenichi Kawaguchi

    IPC分类号： G06F13/36

    CPC分类号： G06F13/4027 ,  G06F13/4031 ,  G06F13/4059 ,  G06F13/423 ,  G06F2213/0024

    摘要： A bus bridge is connected to a primary bus and a secondary bus, and relays data between a master and a target which are each connected to a different one of the primary and secondary buses. The bus bridge includes a primary bus interface, a secondary bus interface, a data FIFO, and a register block. The register block, which can be written by the master, includes two registers corresponding to the primary and secondary buses. Relay information showing the number of entries of data to be relayed from the target to the master is registered in a register corresponding to a bus to which the target is connected. In a read transaction, the primary bus interface or the secondary bus interface reads data from the target until data of the amount shown by the registered relay information is stored in the data FIFO.

    Data transfer apparatus
    14.
    发明申请
    Data transfer apparatus 审中-公开
    数据传输装置

    公开(公告)号：US20050135402A1

    公开(公告)日：2005-06-23

    申请号：US10998136

    申请日：2004-11-29

    申请人： Kenichi Kawaguchi ,  Yoshiteru Mino

    发明人： Kenichi Kawaguchi ,  Yoshiteru Mino

    IPC分类号： G06T1/60 ,  G06F13/38 ,  H04J3/26 ,  H04N5/00 ,  H04N21/458

    CPC分类号： H04N21/4583

    摘要： A buffer is provided between an image processor and image I/O unit and a shared memory to be accessed by those units in common, and the buffer is controlled so as to be used only for a specific access, and data transmission to the shared memory is also controlled. With respect to a single transmission request from the image processor and a burst transmission request from the image I/O unit, a selector is controlled such that the single transmission data is retained in the buffer and that the burst transmission to the shared memory is executed.

    摘要翻译： 在图像处理器和图像I / O单元之间提供缓冲器和由这些单元共享的共享存储器，并且缓冲器被控制以仅被用于特定访问，并且数据传输到共享存储器 也受到控制。 对于来自图像处理器的单个传输请求和来自图像I / O单元的突发传输请求，控制选择器使得单个传输数据保留在缓冲器中，并且执行到共享存储器的突发传输 。

    Melting and impregnating apparatus method of manufacturing linear composite material and linear composite material
    15.
    发明授权
    Melting and impregnating apparatus method of manufacturing linear composite material and linear composite material 有权
    熔融浸渍设备制造线性复合材料和线性复合材料的方法

    公开(公告)号：US06623804B1

    公开(公告)日：2003-09-23

    申请号：US09667305

    申请日：2000-09-25

    申请人： Kenichi Kawaguchi ,  Hitoshi Ushijima ,  Takeshi Kamata

    发明人： Kenichi Kawaguchi ,  Hitoshi Ushijima ,  Takeshi Kamata

    IPC分类号： B05D118

    CPC分类号： D01D11/06 ,  C23C2/006

    摘要： A melting and impregnating apparatus includes an impregnating tank having an inlet sealing portion in the bottom portion thereof, an outlet sealing portion in the upper portion thereof and a drawing portion disposed between the sealing portions; a raw-material heating tank allowed to communicate with the impregnating tank through a heating passage; and pressurizing means for maintaining pressurized states of the inside portions of the impregnating tank and the pressurizing means.

    摘要翻译： 熔融浸渍装置包括：浸渍槽，其底部具有入口密封部分，其上部具有出口密封部分和设置在密封部分之间的拉伸部分; 允许原料加热槽通过加热通道与浸渍槽连通; 以及用于保持浸渍罐和加压装置的内部的加压状态的加压装置。

    Semiconductor optical device
    16.
    发明授权
    Semiconductor optical device 有权
    半导体光学器件

    公开(公告)号：US08809906B2

    公开(公告)日：2014-08-19

    申请号：US13613177

    申请日：2012-09-13

    申请人： Lei Zhu ,  Shigeaki Sekiguchi ,  Shinsuke Tanaka ,  Kenichi Kawaguchi

    发明人： Lei Zhu ,  Shigeaki Sekiguchi ,  Shinsuke Tanaka ,  Kenichi Kawaguchi

    IPC分类号： H01L31/102

    CPC分类号： G02B6/122 ,  G02B6/29352 ,  G02B2006/121 ,  G02F1/025 ,  H01L31/105

    摘要： A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.

    摘要翻译： 半导体光学器件包括第一覆盖层，第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层，其中，光波导层包括第一半导体层，第二半导体层，设置在第一覆盖层 半导体层并且沿一个方向延伸，以及覆盖第二半导体层的顶表面的第三半导体层，并且其中第一半导体层包括设置在第二半导体层一侧的n型区域，p型区域 设置在第二半导体层的另一侧，以及设置在n型区域和p型区域之间的i型区域，并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。

    Optical semiconductor device and manufacturing method of the same
    17.
    发明授权
    Optical semiconductor device and manufacturing method of the same 有权
    光半导体器件及其制造方法

    公开(公告)号：US07968868B2

    公开(公告)日：2011-06-28

    申请号：US12654016

    申请日：2009-12-08

    申请人： Nami Yasuoka ,  Kenichi Kawaguchi

    发明人： Nami Yasuoka ,  Kenichi Kawaguchi

    IPC分类号： H01L31/00

    CPC分类号： H01L31/18 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035236

    摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.

    摘要翻译： 在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。 在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层） 每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

    Quantum dot semiconductor device
    18.
    发明授权
    Quantum dot semiconductor device 有权
    量子点半导体器件

    公开(公告)号：US07829880B2

    公开(公告)日：2010-11-09

    申请号：US12047806

    申请日：2008-03-13

    申请人： Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

    发明人： Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/5009 ,  H01S2301/04 ,  Y10S438/962

    摘要： A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.

    摘要翻译： 量子点半导体器件包括具有多个量子点层的有源层，每个量子点层包括通过堆叠多个量子点形成的复合量子点和与复合量子点的侧面接触形成的侧面阻挡层。 每个量子点层形成的量子点的堆叠数量和侧面阻挡层的应变幅度被设定为使得有源层的增益谱具有对应于 增益谱在所需的工作温度范围内。