公开(公告)号：US20060219031A1

公开(公告)日：2006-10-05

申请号：US11421696

申请日：2006-06-01

申请人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

发明人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

IPC分类号： G01N19/00

CPC分类号： G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

公开(公告)号：US20050196976A1

公开(公告)日：2005-09-08

申请号：US11115854

申请日：2005-04-25

申请人： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

发明人： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

摘要： The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

摘要翻译： 本发明包括填充半导体衬底中的间隙的方法。 在反应室内设置底物和含有至少一种重氢化合物的气体混合物。 通过同时沉积和蚀刻该层，使气体混合物反应以在衬底上形成一层材料。 材料层填充间隙，使得间隙内的材料基本上无空隙。 本发明包括提供改进的沉积速率均匀性的方法。 在选自由D 2，HD，DT，T 2和TH组成的组中的至少一种气体存在下，材料沉积在表面上。 沉积期间的净沉积速率在整个表面上具有相对于在其它实质上相同的条件下利用H 2 N沉积期间发生的相应的变化程度可以显着改善的表面上的变化程度。

公开(公告)号：US20050064729A1

公开(公告)日：2005-03-24

申请号：US10669671

申请日：2003-09-23

申请人： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

发明人： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/469

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

摘要： The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

摘要翻译： 本发明包括填充半导体衬底中的间隙的方法。 在反应室内设置底物和含有至少一种重氢化合物的气体混合物。 通过同时沉积和蚀刻该层，使气体混合物反应以在衬底上形成一层材料。 材料层填充间隙，使得间隙内的材料基本上无空隙。 本发明包括提供改进的沉积速率均匀性的方法。 在选自由D2，HD，DT，T2和TH组成的组中的至少一种气体的存在下，在表面上沉积材料。 沉积期间的净沉积速率在整个表面上具有相对于相对于在基本上相同的条件下利用H 2时沉积期间发生的相应的变化程度可以显着改善的表面的变化程度。

公开(公告)号：US20070046172A1

公开(公告)日：2007-03-01

申请号：US11216541

申请日：2005-08-31

申请人： Gurtej Sandhu ,  Neal Rueger

发明人： Gurtej Sandhu ,  Neal Rueger

IPC分类号： H01J63/04

CPC分类号： H01L22/12 ,  B82Y15/00 ,  H01J2237/2814 ,  H01J2237/2818

摘要： Methods and systems that include a nanotube used as an emitter in the testing and fabrication of integrated circuits. The nanotube emits a signal to a substrate. Based on the signal or the electrical properties, e.g., current induced in the substrate by the signal, the region of the substrate is characterized. The characterization includes topology of the region of the substrate such as determining whether a recess in the substrate has a proper depth or other dimensions or characteristics of the substrate.

摘要翻译： 包括在集成电路的测试和制造中用作发射极的纳米管的方法和系统。 纳米管向衬底发出信号。 基于信号或电特性，例如由信号在衬底中感应的电流，衬底的区域被表征。 表征包括衬底的区域的拓扑，例如确定衬底中的凹槽是否具有适当的深度或衬底的其他尺寸或特性。

公开(公告)号：US20060275549A1

公开(公告)日：2006-12-07

申请号：US11146248

申请日：2005-06-06

申请人： Krupakar Subramanian ,  Neal Rueger ,  Gurtej Sandhu

发明人： Krupakar Subramanian ,  Neal Rueger ,  Gurtej Sandhu

IPC分类号： B05D1/32 ,  H05H1/24 ,  C23C16/00

CPC分类号： B05B1/14 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  H01J37/32366

摘要： The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

摘要翻译： 本发明一般涉及一种用于控制纳米颗粒的放置的系统及其使用方法。 在一个说明性实施例中，该装置包括衬底和衬底中的多个漏斗，其中每个漏斗包括入口开口和细长的矩形出口。 在一个说明性实施例中，该方法包括产生包含多个碳纳米管的多尘等离子体，将掩模放置在尘埃等离子体和碳纳米管的期望目标之间，掩模具有延伸穿过其中的多个开口，并且熄灭灰尘等离子体 从而允许灰尘等离子体中的至少一些碳纳米管穿过掩模中的多个开口中的至少一些并且落在目标上。

公开(公告)号：US20060236513A1

公开(公告)日：2006-10-26

申请号：US11456055

申请日：2006-07-06

申请人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

发明人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

IPC分类号： H01L21/66 ,  F17D3/00 ,  F16K37/00 ,  G01B7/00

CPC分类号： G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T29/41 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

摘要翻译： 提供了用于检测质量流量控制器（MFC）中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。 在本发明的一个实施例中，提供了一种新颖的MFC。 MFC包括孔口，质量流量控制门，致动器和门位置传感器。 致动器移动控制门以控制通过孔口的流动。 门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。 根据本发明的一个实施例，门位置传感器包括用于发送信号的发射机和用于接收信号的接收机，使得接收机基于所接收的信号提供门的位置的指示。 这里描述了门位置传感器的其他实施例，以及在半导体制造过程中并入新颖的MFC的系统和方法。

公开(公告)号：US20060134924A1

公开(公告)日：2006-06-22

申请号：US11341199

申请日：2006-01-27

申请人： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

发明人： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

摘要： The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

摘要翻译： 本发明包括填充半导体衬底中的间隙的方法。 在反应室内设置底物和含有至少一种重氢化合物的气体混合物。 通过同时沉积和蚀刻该层，使气体混合物反应以在衬底上形成一层材料。 材料层填充间隙，使得间隙内的材料基本上无空隙。 本发明包括提供改进的沉积速率均匀性的方法。 在选自由D 2，HD，DT，T 2和TH组成的组中的至少一种气体存在下，材料沉积在表面上。 沉积期间的净沉积速率在整个表面上具有相对于在其它实质上相同的条件下利用H 2 N沉积期间发生的相应的变化程度可以显着改善的表面上的变化程度。

公开(公告)号：US10515801B2

公开(公告)日：2019-12-24

申请号：US12908206

申请日：2010-10-20

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

摘要： Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.

公开(公告)号：US09196753B2

公开(公告)日：2015-11-24

申请号：US13089648

申请日：2011-04-19

申请人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

发明人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

IPC分类号： H01L27/108 ,  H01L29/872 ,  H01L27/28 ,  H01L45/00 ,  H01L27/102 ,  H01L29/885 ,  H01L27/22 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00

CPC分类号： H01L29/872 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/285 ,  H01L29/885 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

摘要翻译： 为选择装置提供方法，装置和系统，所述选择装置可以包括形成在第一电极上的至少一个半导体材料的半导体叠层，其中半导体叠层可以具有约700埃（或更小）的厚度。 所述至少一个半导体材料中的每一个可以具有约4电子伏（eV）或更小的相关带隙，并且可以在半导体叠层上形成第二电极。

公开(公告)号：US08946907B2

公开(公告)日：2015-02-03

申请号：US13526225

申请日：2012-06-18

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L23/52 ,  H01L21/311 ,  H01L21/033

CPC分类号： H01L23/5226 ,  H01L21/0337 ,  H01L21/31144 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.

摘要翻译： 提供了一种用于在半导体组件中产生结构的方法。 该方法包括将孔蚀刻到电介质层中，并在该介电层上施加聚合物层。 均匀地施加聚合物层，并根据孔的几何形状，或者存在或不存在生长促进材料，以不同的速率填充孔。 该聚合物产生用于蚀刻间隔物之间​​的附加结构的间隔物。 该方法能够实现比当前光刻技术更小的结构。