公开(公告)号：US6119294A

公开(公告)日：2000-09-19

申请号：US232203

申请日：1999-01-14

Applicant: Chien-Hsin Lai ,  Juen-Kuen Lin ,  Kun-Lin Wu ,  Peng-Yih Peng

Inventor： Chien-Hsin Lai ,  Juen-Kuen Lin ,  Kun-Lin Wu ,  Peng-Yih Peng

IPC: H01L21/00 ,  A46B13/02

CPC classification number: H01L21/67046 ,  H01L21/6704

Abstract: An auto brush pressure cleaning system is described. The system includes a first pneumatic brush, a second pneumatic brush disposed to align with the first pneumatic brush adjacent and parallel to the first pneumatic brush, and a computer. The system also includes a first brush pressure regulator electrically coupled to the computer and transmitting a first and a second signal to the computer and a second brush pressure regulator coupled to the second pneumatic brush and the first brush pressure regulator through a first three-way valve and electrically coupled to the computer, wherein the second pneumatic brush transmits a third signal to the second brush pressure regulator and to the first brush pressure regulator and the second brush pressure regulator transmits a fourth signal to the computer. The system further includes a first electro-pressure regulator coupled to the first brush pressure regulator and the first pneumatic brush through a second three-way valve, wherein the first brush pressure regulator receives a fifth signal from the first pneumatic brush and a second electro-pressure regulator coupled to the second pneumatic brush and electrically coupled to the first electro-pressure regulator and the computer, wherein the computer transmits a sixth signal to the second and the first electro-pressure regulators.

Abstract translation: 描述了一种自动刷式压力清洗系统。 该系统包括第一气动刷，设置成与第一气动刷相邻并平行于第一气动刷的第二气动刷以及计算机。 该系统还包括电耦合到计算机并将第一和第二信号传送到计算机的第一电刷压力调节器和通过第一三通阀耦合到第二气动刷和第一电刷压力调节器的第二电刷压力调节器 并且电耦合到所述计算机，其中所述第二气动刷将第三信号传输到所述第二电刷压力调节器和所述第一电刷压力调节器，并且所述第二电刷压力调节器将第四信号传输到所述计算机。 该系统还包括通过第二三通阀联接到第一电刷压力调节器和第一气动刷的第一电压调节器，其中第一电刷压力调节器接收来自第一气动刷的第五信号和第二电 - 耦合到第二气动刷并且电耦合到第一电压调节器和计算机的压力调节器，其中计算机向第二和第一电压调节器传输第六信号。

公开(公告)号：US6057248A

公开(公告)日：2000-05-02

申请号：US897282

申请日：1997-07-21

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/306 ,  H01L21/4763

CPC classification number: H01L21/02065

Abstract: A method of removing residual contaminants in grooves of an alignment mark of a semiconductor wafer after a chemical-mechanical polishing is disclosed. The method includes scrubbing the semiconductor wafer using conventional scrubbing technique. Next, the semiconductor wafer is etched back to remove a damaged layer, which is formed during the chemical-mechanical polishing, over the semiconductor wafer. Finally, the semiconductor wafer is cleaned, for example, by NH.sub.4 OH/H.sub.2 O.sub.2 /DI, agitated by a megasonic source, thereby substantially removing the residual contaminants from the alignment mark.

Abstract translation: 公开了一种在化学机械抛光之后去除半导体晶片的对准标记的凹槽中残留污染物的方法。 该方法包括使用常规洗涤技术擦洗半导体晶片。 接下来，将半导体晶片回蚀刻以除去在化学机械抛光期间形成的受损层在半导体晶片上。 最后，例如通过NH 4 OH / H 2 O 2 / DI清洗半导体晶片，用兆声波源进行搅拌，从而基本上从对准标记中除去残留的污染物。

公开(公告)号：US20110291942A1

公开(公告)日：2011-12-01

申请号：US12839886

申请日：2010-07-20

Applicant: Yu CHEN ,  Kun-Lin Wu

Inventor： Yu CHEN ,  Kun-Lin Wu

IPC: G06F3/02

CPC classification number: G06F3/0489

Abstract: A display method, an application program and a computer readable medium for displaying key function are disclosed. The display method for computer key function includes steps user pressing a special keys on the keyboard, triggering an internal embedded controller in the computer and further detecting hardware function set up in the computer via a basic input output system. Thus, function descriptions are displayed on a screen according to hardware function set up in the computer, wherein the hardware function and function descriptions correspond to each function key on the keyboard. Accordingly, it is not required to replace keyboard with different printed function reminding pattern when hardware functions of the computer is changed.

Abstract translation: 公开了一种用于显示键功能的显示方法，应用程序和计算机可读介质。 用于计算机键功能的显示方法包括用户按压键盘上的特殊键的步骤，触发计算机内部嵌入式控制器，并通过基本输入输出系统进一步检测计算机中设置的硬件功能。 因此，功能描述根据计算机中设置的硬件功能在屏幕上显示，其中硬件功能和功能描述对应于键盘上的每个功能键。 因此，当计算机的硬件功能改变时，不需要用不同的打印功能提醒模式替换键盘。

公开(公告)号：US20110189854A1

公开(公告)日：2011-08-04

申请号：US13087356

申请日：2011-04-14

Applicant: Kun-Lin Wu ,  Meng-Jin Tsai

Inventor： Kun-Lin Wu ,  Meng-Jin Tsai

IPC: H01L21/768

CPC classification number: H01L21/76829 ,  H01L21/31053 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/3185 ,  H01L21/76819 ,  H01L21/7684

Abstract: A chemical-mechanical polishing process includes the steps of providing a semiconductor substrate having a first conductive line thereon, and then forming at least one dielectric layer over the substrate and the first conductive line. Next, a chemical-mechanical polishing method is used to polish the surface of the dielectric layer. Thereafter, a cap layer is formed over the polished dielectric layer. The method of forming the cap layer includes depositing silicon oxide using a chemical vapor deposition method with silicane (SiH4) or tetra-ethyl-ortho-silicate (TEOS) as the main reactive agent. Alternatively, the cap layer can be formed by depositing silicon nitride using a chemical vapor deposition method with silicane or silicon dichlorohydride (SiH2Cl2) as the main reactive agent. Finally, a via opening is formed through the dielectric layer and the cap layer, and a second conductive line that couples electrically with the first conductive line through the via opening.

Abstract translation: 化学机械抛光工艺包括以下步骤：提供其上具有第一导电线的半导体衬底，然后在衬底和第一导电线上形成至少一个电介质层。 接下来，使用化学 - 机械抛光方法来抛光电介质层的表面。 此后，在抛光的介电层上形成覆盖层。 形成盖层的方法包括使用硅烷（SiH4）或四乙基原硅酸盐（TEOS）作为主要反应剂的化学气相沉积法沉积氧化硅。 或者，可以通过使用化学气相沉积法以硅烷或二氯硅酸氢钠（SiH 2 Cl 2）作为主要反应剂沉积氮化硅来形成覆盖层。 最后，通过介电层和盖层形成通孔，以及通过通路孔与第一导电线电连接的第二导线。

公开(公告)号：US06241582B1

公开(公告)日：2001-06-05

申请号：US09157041

申请日：1998-09-18

Applicant: Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Kun-Lin Wu ,  Daniel Chiu ,  Chih-Chiang Yang ,  Juan-Yuan Wu ,  Hao-Kuang Chiu

Inventor： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Kun-Lin Wu ,  Daniel Chiu ,  Chih-Chiang Yang ,  Juan-Yuan Wu ,  Hao-Kuang Chiu

IPC: B24B100

CPC classification number: B24B37/32 ,  B24B37/042 ,  B24B57/02

Abstract: A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Abstract translation: 化学机械抛光机及其制造方法。 化学机械抛光机包括在保持环的底部具有多个浆料通道的保持环。 保持环还包括圆形路径。 通过将浆料通过浆料通道和圆形管，在化学机械抛光机内将晶片平坦化。

公开(公告)号：US06140232A

公开(公告)日：2000-10-31

申请号：US386673

申请日：1999-08-31

Applicant: Yu-Tsai Lin ,  Kun-Lin Wu

Inventor： Yu-Tsai Lin ,  Kun-Lin Wu

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/283

CPC classification number: H01L29/66515 ,  H01L21/28052 ,  H01L21/28518

Abstract: A method for forming narrow line width silicide having reduced sheet resistance is disclosed by the present invention. The method includes: firstly, providing a semiconductor substrate, whereon there formed at least a source/drain region and a gate region, as well as a spacer formed on a sidewall of the gate region; then, depositing a titanium metal layer overlying the semiconductor substrate and the resulting structure; next, carrying out rapid thermal processing and RCA cleaning to form a first titanium silicide layer; consequentially, forming a selective polysilicon layer over the first titanium silicide layer; and, depositing a second titanium metal layer over the selective polysilicon layer and overlying the exposed surface of spacer; finally, carrying out rapid thermal processing and RCA cleaning once again to form a second titanium silicide layer. The overall thickness of titanium silicide is depending on the requiring resistance of titanium silicide under a certain line width.

Abstract translation: 通过本发明公开了一种形成具有降低的薄层电阻的窄线宽度硅化物的方法。 该方法包括：首先提供半导体衬底，其中至少形成源极/漏极区域和栅极区域，以及形成在栅极区域的侧壁上的间隔物; 然后沉积覆盖半导体衬底的钛金属层和所得结构; 接下来，进行快速热处理和RCA清洗以形成第一硅化钛层; 从而在第一钛硅化物层上形成选择性多晶硅层; 并且在所述选择性多晶硅层上沉积第二钛金属层并且覆盖所述间隔物的暴露表面; 最后进行快速热处理和RCA清洗再次形成第二硅化钛层。 硅化钛的总厚度取决于一定线宽度下硅化钛的要求电阻。

公开(公告)号：US6077784A

公开(公告)日：2000-06-20

申请号：US132876

申请日：1998-08-11

Applicant: Kun-Lin Wu ,  Meng-Jin Tsai

Inventor： Kun-Lin Wu ,  Meng-Jin Tsai

IPC: H01L21/3105 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/302

CPC classification number: H01L21/76829 ,  H01L21/31053 ,  H01L21/76819 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/3185 ,  H01L21/7684

Abstract: A chemical-mechanical polishing process for forming a metallic interconnect includes the steps of providing a semiconductor substrate having a first metallic line thereon, and then forming a dielectric layer over the substrate and the first metallic line. Next, a chemical-mechanical polishing method is used to polish the surface of the dielectric layer. Thereafter, a thin cap layer is formed over the polished dielectric layer. The thin cap layer having a thickness of between 1000-3000 .ANG. can be, for example, a silicon dioxide layer, a phosphosilicate glass layer or a silicon-rich oxide layer. The method of forming the cap layer includes depositing silicon oxide using a chemical vapor deposition method with silicane (SiH.sub.4) or tetra-ethyl-ortho-silicate (TEOS) as the main reactive agent. Alternatively, the cap layer can be formed by depositing silicon nitride using a chemical vapor deposition method with silicane or silicon dichlorohydride (SiH.sub.2 Cl.sub.2) as the main reactive agent. Finally, a via opening is formed through the dielectric layer and the cap layer, and a second metallic line that couples electrically with the first metallic line through the via opening is formed.

Abstract translation: 用于形成金属互连的化学机械抛光工艺包括以下步骤：提供其上具有第一金属线的半导体衬底，然后在衬底和第一金属线上形成电介质层。 接下来，使用化学 - 机械抛光方法来抛光电介质层的表面。 此后，在抛光的介电层上形成薄盖层。 具有1000-3000厚度的薄盖层可以是例如二氧化硅层，磷硅酸盐玻璃层或富硅氧化物层。 形成盖层的方法包括使用硅烷（SiH4）或四乙基原硅酸盐（TEOS）作为主要反应剂的化学气相沉积法沉积氧化硅。 或者，可以通过使用化学气相沉积法以硅烷或二氯硅酸氢钠（SiH 2 Cl 2）作为主要反应剂沉积氮化硅来形成覆盖层。 最后，形成通过介电层和盖层的通路开口，并且形成通过通路孔与第一金属线电连接的第二金属线。

公开(公告)号：US6062963A

公开(公告)日：2000-05-16

申请号：US59750

申请日：1998-04-14

Applicant: Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Hao-Kuang Chiu ,  Kun-Lin Wu

Inventor： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Hao-Kuang Chiu ,  Kun-Lin Wu

IPC: B24B37/04 ,  B24B57/02 ,  B24B5/00 ,  B24B47/02

CPC classification number: B24B37/32 ,  B24B37/042 ,  B24B57/02

Abstract: A chemical-mechanical polishing machine having an improved wafer retainer ring design for the polishing head, comprising a polishing table, a polishing pad, a polishing head and a wafer retainer ring, wherein the polishing pad is above the polishing table, the polishing head is above the polishing pad, and the wafer retainer ring is mounted onto the polishing head. Improvement of the retainer ring design includes the formation of a plurality of guiding holes around the periphery of the retainer ring such that the guiding hole axis follows the centrifugal line produced by a rotating polishing head. Furthermore, the guiding hole has a gradual diffusing structure from the outer inlet to the inner outlet.

Abstract translation: 一种具有用于抛光头的改进的晶片保持环设计的化学机械抛光机，包括抛光台，抛光垫，抛光头和晶片保持环，其中抛光垫在抛光台之上，抛光头是 在抛光垫上方，并且晶片保持环安装在抛光头上。 保持环设计的改进包括围绕保持环的周边形成多个引导孔，使得引导孔轴线遵循由旋转抛光头产生的离心线。 此外，引导孔具有从外部入口到内部出口的逐渐扩散结构。

公开(公告)号：US6030892A

公开(公告)日：2000-02-29

申请号：US866131

申请日：1997-05-30

Applicant: Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

Inventor： Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

IPC: H01L21/3105 ,  H01L21/4763

CPC classification number: H01L21/31053

Abstract: A method of preventing overpolishing in a chemical-mechanical polishing operation includes using a spin-on polymer material instead of spin-on glass as the local planarization material. The spin-on polymer layer is further used as a polishing stop layer so as to prevent damage to components due to overpolishing, because the polishing rate of the spin-on polymer layer in a chemical-mechanical polishing operation is, in general, lower than the polishing rate of the silicon dioxide layer formed using plasma enhanced chemical vapor deposition.

Abstract translation: 在化学机械抛光操作中防止过度抛光的方法包括使用旋涂聚合物材料代替旋涂玻璃作为局部平坦化材料。 旋涂聚合物层进一步用作抛光停止层，以防止由于过度抛光而损坏组分，因为化学机械抛光操作中的旋涂聚合物层的抛光速率通常低于 使用等离子体增强化学气相沉积形成的二氧化硅层的抛光速率。

公开(公告)号：US06013559A

公开(公告)日：2000-01-11

申请号：US172465

申请日：1998-10-14

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76224 ,  Y10S148/05

Abstract: A method of fabricating a trench isolation structure in a semiconductor devices. First, a mask layer is formed on a substrate and patterned. Then, a trench is formed in the substrate using the mask layer as a mask. An insulating layer is formed under the mask layer to fill the trench. The insulating layer is polished to expose a portion of the mask layer and an insulating plug is left in the trench. A RTP is performed to avoid mobile ions diffuse into the substrate. There are several operating conditions for the RTP. For example the operating temperature is ranged from about 600.degree. C. to about 1300.degree. C. The duration for performing the RTP is ranged from about 5 seconds to about 5 minutes. The operating gas can be selected from one of a group of N.sub.2, O.sub.2, or N.sub.2 O. Besides, before the RTP a cleaning step is performed using SC-1 or hydrogen fluoride (HF) solution as cleaning solution.

Abstract translation: 一种在半导体器件中制造沟槽隔离结构的方法。 首先，在基板上形成掩模层并进行图案化。 然后，使用掩模层作为掩模在衬底中形成沟槽。 在掩模层之下形成绝缘层以填充沟槽。 抛光绝缘层以露出掩模层的一部分，并且绝缘插头留在沟槽中。 执行RTP以避免移动离子扩散到衬底中。 RTP有几种操作条件。 例如，操作温度范围为约600℃至约1300℃。执行RTP的持续时间为约5秒至约5分钟。 工作气体可以选自一组N2，O2或N2O中的一种。 此外，在RTP之前，使用SC-1或氟化氢（HF）溶液作为清洁溶液进行清洁步骤。