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    LIGHT EMITTING DEVICE
    14.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140159095A1

    公开(公告)日：2014-06-12

    申请号：US14179420

    申请日：2014-02-12

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Kwang Ki CHOI

    IPC: H01L33/36 ,  H01L33/60

    CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/36 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011

    Abstract: A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

    Abstract translation: 发光器件包括金属层，发光结构，设置在第二导电类型半导体层的第一上部上的电极，设置在第二导电类型半导体层的第二上部上的电流扩展部分，粘合剂 设置在第一导电类型半导体层下的绝缘层，设置在电极和粘合剂层之间的绝缘层，设置在发光结构的侧表面上以及在发光结构的至少一个上表面上的钝化层，以及 设置在所述金属层和所述第一导电型半导体层之间的反射层。

    LIGHT-EMITTING ELEMENT
    17.
    发明申请
    LIGHT-EMITTING ELEMENT 审中-公开

    公开(公告)号：US20180301597A1

    公开(公告)日：2018-10-18

    申请号：US15576760

    申请日：2016-05-25

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sun Woo PARK ,  Dong Hyun SUNG ,  Dae Hee LEE ,  Byoung Woo LEE ,  Kwang Ki CHOI ,  Jae Cheon HAN

    IPC: H01L33/38 ,  H01L33/60 ,  H01L33/26

    Abstract: Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer which is disposed in a plurality of via holes passing through the light-emitting structure and second conductive layer and comprises a plurality of through electrodes electrically connected to the first semiconductor layer; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, second semiconductor layer, and second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the farther away the second conductive layer disposed between the plurality of through electrodes is from the electrode pad, the greater the width of the second conductive layer becomes.

    LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS INCLUDING THE PACKAGE
    18.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS INCLUDING THE PACKAGE 审中-公开

    公开(公告)号：US20170317253A1

    公开(公告)日：2017-11-02

    申请号：US15645788

    申请日：2017-07-10

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Kwang Ki CHOI

    IPC: H01L33/62 ,  H01L33/38 ,  H01L33/60 ,  H01L33/48 ,  H01L33/20

    CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/483 ,  H01L33/486 ,  H01L33/60 ,  H01L2224/16

    Abstract: Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.

    LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
    19.
    发明申请
    LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
    发光装置，电极结构，发光装置包装和照明系统

    公开(公告)号：US20170025579A1

    公开(公告)日：2017-01-26

    申请号：US15284838

    申请日：2016-10-04

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Kwang Ki CHOI ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song

    IPC: H01L33/38 ,  H01L33/58 ,  H01L33/44 ,  H01L33/62 ,  H01L33/40

    CPC classification number: H01L33/38 ,  G02B6/0073 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer comprising a first semiconductor layer, a second semiconductor layer, and an active layer. An electrode disposed on a top surface of the first semiconductor layer, a first layer includes a transmittive oxide material between the top surface of the first semiconductor layer and the electrode, and a second layer disposed is disposed between the first layer and the electrode, wherein the first layer is formed in a different material from the second layer, wherein the electrode comprises a lower portion connected to the first semiconductor layer and an upper portion on a top surface of the second layer.

    Abstract translation: 提供发光器件，电极结构，发光器件封装和照明系统。 发光器件包括包括第一半导体层，第二半导体层和有源层的发光结构层。 设置在第一半导体层的顶表面上的电极，第一层包括在第一半导体层的顶表面和电极之间的透射氧化物材料，并且设置在第一层和电极之间的第二层，其中 第一层以与第二层不同的材料形成，其中电极包括连接到第一半导体层的下部分和第二层顶表面上的上部。

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