中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

48 records (took 0.019 seconds)

    LIGHT EMITTING DEVICE
    14.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20160365484A1

    公开(公告)日：2016-12-15

    申请号：US15244724

    申请日：2016-08-23

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Kwang Ki CHOI

    IPC: H01L33/22 ,  H01L33/40 ,  H01L33/00 ,  H01L33/60 ,  H01L33/62 ,  H01L33/38 ,  H01L33/42

    CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/36 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011

    Abstract: A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

    Abstract translation: 发光器件包括金属层，发光结构，设置在第二导电类型半导体层的第一上部上的电极，设置在第二导电类型半导体层的第二上部上的电流扩展部分，粘合剂 设置在第一导电类型半导体层下的绝缘层，设置在电极和粘合剂层之间的绝缘层，设置在发光结构的侧表面上以及在发光结构的至少一个上表面上的钝化层，以及 设置在所述金属层和所述第一导电型半导体层之间的反射层。

    LIGHTING LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS INCLUDING THE SAME
    15.
    发明申请
    LIGHTING LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS INCLUDING THE SAME 审中-公开
    照明灯发光装置和照明装置，包括它们

    公开(公告)号：US20160254414A1

    公开(公告)日：2016-09-01

    申请号：US15053559

    申请日：2016-02-25

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sung Ho JUNG ,  Bum Jin YIM ,  Sang Youl LEE

    IPC: H01L33/46 ,  H01L33/44 ,  H01L33/42 ,  H01L33/62

    CPC classification number: H01L33/465 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62

    Abstract: Disclosed are a light emitting device package and a lighting apparatus. The light emitting device package includes a substrate, a light emitting structure disposed under the substrate and including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer exposed through at least one contact hole, a second electrode connected to the second conductive type semiconductor layer, a first insulating layer configured to extend from under the light emitting structure to a space between a side of the light emitting structure and the first electrode and configured to reflect light, and a reflective layer disposed under the first insulating layer.

    Abstract translation: 公开了一种发光器件封装和照明装置。 发光器件封装包括：衬底，设置在衬底下方并包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，与第一导电类型半导体层暴露的第一电极 通过至少一个接触孔，连接到第二导电类型半导体层的第二电极，被配置为从发光结构下方延伸到发光结构的一侧与第一电极之间的空间的第一绝缘层， 反射光，以及设置在第一绝缘层下方的反射层。

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING APPARATUS INCLUDING THE PACKAGE
    16.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING APPARATUS INCLUDING THE PACKAGE 有权
    发光装置，发光装置包，以及包括包装的照明装置

    公开(公告)号：US20160111601A1

    公开(公告)日：2016-04-21

    申请号：US14879798

    申请日：2015-10-09

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Jae Won SEO

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/46

    CPC classification number: H01L33/382 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62

    Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, disposed under the substrate, a reflective layer disposed under the second conductive semiconductor layer, the reflective layer having at least one first through-hole formed in a first direction, the first direction being a thickness direction of the light emitting structure, a contact layer embedded in at least one second through-hole penetrating the reflective layer, the second conductive semiconductor layer, and the active layer so as to be connected to the first conductive semiconductor layer, and an insulation layer disposed between the contact layer and each of the reflective layer, the second conductive semiconductor layer, and the active layer, the insulation layer being embedded in the first through-hole.

    Abstract translation: 实施例提供了一种发光器件，其包括衬底，包括设置在衬底下方的第一导电半导体层，有源层和第二导电半导体层的发光结构，设置在第二导电半导体层下方的反射层，反射层 层，其具有沿第一方向形成的至少一个第一通孔，所述第一方向为所述发光结构的厚度方向，嵌入在贯穿所述反射层的至少一个第二通孔中的接触层，所述第二导电半导体层 和有源层，以便连接到第一导电半导体层，以及设置在接触层与反射层，第二导电半导体层和有源层中的每一个之间的绝缘层，绝缘层嵌入 第一个通孔。

    SEMICONDUCTOR DEVICE
    17.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210036187A1

    公开(公告)日：2021-02-04

    申请号：US16761008

    申请日：2018-11-02

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  Hyeon Min CHO

    IPC: H01L33/20 ,  H01L25/075 ,  H01L33/00 ,  H01L25/16

    Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.

    SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME
    18.
    发明申请
    SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME 审中-公开

    公开(公告)号：US20200251626A1

    公开(公告)日：2020-08-06

    申请号：US16641771

    申请日：2018-08-31

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  KI Man KANG ,  Do Yub KIM ,  Eun Dk LEE

    IPC: H01L33/50 ,  H01L33/62 ,  H01L33/44 ,  H01L33/38 ,  F21S41/19 ,  H01L33/58 ,  H01L33/00 ,  H01L27/15 ,  F21S41/153

    Abstract: Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 μm to 40 μm and the thickness of the wavelength conversion layer is 1 μm to 50 μm.

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE INCLUDING THE DEVICE, AND LIGHTING APPARATUS INCLUDING THE PACKAGE
    20.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE INCLUDING THE DEVICE, AND LIGHTING APPARATUS INCLUDING THE PACKAGE 审中-公开

    公开(公告)号：US20190221714A1

    公开(公告)日：2019-07-18

    申请号：US16362166

    申请日：2019-03-22

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sung Ho JUNG ,  Jin Kyung CHOI ,  Sang Youl LEE

    IPC: H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L33/44 ,  H01L33/46 ,  H01L33/42

    Abstract: A light emitting device includes a sapphire substrate; a light emitting structure disposed on the sapphire substrate, and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first bonding pad electrically connected to the first electrode; a second bonding pad electrically connected to the second electrode; a first insulation layer disposed on the light emitting structure; and a second insulation layer disposed between the second electrode and the second bonding pad.

Patent Agency Ranking