公开(公告)号：US5818550A

公开(公告)日：1998-10-06

申请号：US544568

申请日：1995-10-18

申请人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinji Nakamura

发明人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinji Nakamura

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F1/133514 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133357

摘要： A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

公开(公告)号：US20100164921A1

公开(公告)日：2010-07-01

申请号：US12601480

申请日：2008-11-27

申请人： Masumitsu Ino ,  Tsutomu Tanaka ,  Ryoichi Ito ,  Masafumi Kunii ,  Hiroyuki Ikeda ,  Masanobu Ikeda

发明人： Masumitsu Ino ,  Tsutomu Tanaka ,  Ryoichi Ito ,  Masafumi Kunii ,  Hiroyuki Ikeda ,  Masanobu Ikeda

IPC分类号： G09G5/10 ,  G06F3/038

CPC分类号： G02F1/1362 ,  G02F1/13338 ,  G02F2001/13312 ,  G02F2201/58 ,  G09G3/3406 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2360/148

摘要： Improvement of the image quality and position detection accuracy is implemented. Operation of a backlight 300 to emit illuminating light from one face side of a liquid crystal panel 200 to a display region PA of the liquid crystal panel 200 is controlled based on reception light data obtained by an external light sensor element 32b. Here, the operation of the backlight 300 is controlled based on the reception light data obtained by the external light sensor element 32b disposed in the display region PA.

摘要翻译： 实现图像质量和位置检测精度的提高。 基于由外部光传感器元件32b获得的接收光数据来控制从液晶面板200的一个正面侧向液晶面板200的显示区域PA发射照明光的操作。 这里，基于由布置在显示区域PA中的外部光传感器元件32b获得的接收光数据来控制背光源300的操作。

公开(公告)号：US20090207153A1

公开(公告)日：2009-08-20

申请号：US12368632

申请日：2009-02-10

申请人： Masafumi Kunii ,  Ryoichi Ito ,  Masanobu Ikeda

发明人： Masafumi Kunii ,  Ryoichi Ito ,  Masanobu Ikeda

IPC分类号： G06F3/042 ,  G09G3/36

CPC分类号： G02F1/1345 ,  G02F1/1354 ,  G02F1/1362

摘要： Disclosed herein is a liquid crystal display device including a liquid crystal panel having a first substrate, a second substrate facing the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and first and second electrodes formed on a surface side, of the first substrate, facing the second substrate, a transverse electric field being applied to the liquid crystal layer through the first and second electrodes, thereby displaying an image in a pixel area; wherein the first substrate includes: a light receiving element provided on the surface, of the first substrate, facing the second substrate, for receiving an incident light on a light receiving surface thereof, thereby forming data on the received light; and a planarizing film provided on the surface side, of the first substrate, facing the second substrate so as to cover the light receiving element.

摘要翻译： 本发明公开了一种液晶显示装置，包括具有第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的液晶层的液晶面板，以及形成在表面侧的第一和第二电极 所述第一衬底面对所述第二衬底，通过所述第一和第二电极施加到所述液晶层的横向电场，从而在像素区域中显示图像; 其特征在于，所述第一基板包括：受光元件，设置在所述第一基板的面向所述第二基板的表面上，用于在其受光面上接收入射光，由此在所接收的光上形成数据; 以及设置在第一基板的表面侧的面对第二基板以覆盖光接收元件的平坦化膜。

公开(公告)号：US20090191672A1

公开(公告)日：2009-07-30

申请号：US12385103

申请日：2009-03-31

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/336

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78648

摘要： Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.

公开(公告)号：US07550328B2

公开(公告)日：2009-06-23

申请号：US12007302

申请日：2008-01-09

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L33/00 ,  H01L21/425

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78648

摘要： Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.

摘要翻译： 本发明公开了一种制造薄膜半导体器件的方法，该方法包括：在衬底上形成栅电极的第一步骤，在衬底上形成氮氧化硅栅极绝缘膜的第二步骤， 覆盖栅电极，在栅极绝缘膜上形成半导体薄膜的第三步骤，以及在含氧氧化气氛中进行热处理以进行氧化修饰的第四步骤，用于通过与氮氧化硅膜中的氧缺乏部分的氧结合 构成栅极绝缘膜。

公开(公告)号：US20090029530A1

公开(公告)日：2009-01-29

申请号：US12216081

申请日：2008-06-30

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/205

CPC分类号： H01L27/127 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/1214 ,  H01L29/66765

摘要： Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SinH2n+2 (n=2, 3, . . . ) and a hydrogen gas are used as film forming gases.

摘要翻译： 本发明公开了一种制造薄膜半导体器件的方法，包括通过等离子体CVD工艺在衬底上形成包括晶体结构的硅薄膜的步骤，其中由式SinH2n + 2（n = 2，3，...），氢气用作成膜气体。

公开(公告)号：US06569720B2

公开(公告)日：2003-05-27

申请号：US09238899

申请日：1999-01-28

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L2100

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： Threshold voltage (Vth) control in thin-film transistors is facilitated. The thin-film transistor has a laminate structure comprising a thin-film polycrystalline semiconductor, a gate oxide film as formed adjacent to one surface of the semiconductor film, and a gate electrode as laminated on the thin-film polycrystalline semiconductor via the gate oxide film. The method for fabricating the thin-film transistor comprises an implantation step of selectively implanting a dopant in the thin-film semiconductor to form a source region and a drain region of the thin-film transistor, and a rapid thermal annealing (RTA) step of activating the implanted dopant through controlled RTA for Vth control in the thin-film transistor. The RTA step comprises gradually heating the insulating substrate, then exposing the thin-film semiconductor to ultraviolet rays for rapidly heating it, and thereafter gradually cooling it.

摘要翻译： 便于薄膜晶体管的阈值电压（Vth）控制。 薄膜晶体管具有包括薄膜多晶半导体，与半导体膜的一个表面相邻形成的栅极氧化膜的层压结构，以及通过栅极氧化膜层叠在薄膜多晶半导体上的栅电极 。 制造薄膜晶体管的方法包括：注入步骤，用于在薄膜半导体中选择性地注入掺杂剂以形成薄膜晶体管的源极区和漏极区;以及快速热退火（RTA）步骤 通过受控的RTA激活注入的掺杂剂，以在薄膜晶体管中进行Vth控制。 RTA步骤包括逐渐加热绝缘基板，然后将薄膜半导体暴露于紫外线以快速加热，然后逐渐冷却。

公开(公告)号：US06235563B1

公开(公告)日：2001-05-22

申请号：US07790107

申请日：1991-11-07

申请人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

发明人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

IPC分类号： H01L2132

CPC分类号： H01L21/02667 ,  H01L21/2022 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An improved polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600° C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550° C. to 650° C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20° C./min, preferably about 5° C./min, to a prescribed recrystallization temperature within the range about 550° C. to 650° C. Further, between the step of film formation and the step of solid phase recrystallization, the film may be thermally treated at a relatively low temperature, e.g., over 300° C. and preferably between approximately 400° C. to 500° C. for a period of several minutes, such as 30 minutes, to remove hydrogen from the film prior to solid phase recrystallization.

摘要翻译： 通过最初形成可以由非晶硅或微晶体构成的硅膜，通过现有技术的方法获得具有大晶粒尺寸的改善的多晶或多晶硅膜，例如1μm至2μm直径或更大的晶粒 硅或通过化学气相沉积（CVD）方法在低温下包含非晶相中的微晶区域，例如通过用例如氢，氩或氦稀释的硅烷气体的等离子体化学气相沉积（PCVD） 在例如室温至600℃的温度下进行，然后进行固相重结晶，形成多晶膜，该多晶膜在约550℃的较低温度下进行。 在惰性气氛（例如N或Ar）中，在温度逐渐升高的情况下，例如在升温速度低于20℃/分钟的情况下，在约数小时至40小时的时间内， 优选约5° 在约550℃至650℃的范围内的规定的再结晶温度。此外，在成膜步骤和固相重结晶步骤之间，可以在相对低的温度下热处理 ，例如超过300℃，优选在约400℃至500℃之间，持续几分钟，例如30分钟，以在固相重结晶之前从膜中除去氢。

公开(公告)号：US07915648B2

公开(公告)日：2011-03-29

申请号：US12331159

申请日：2008-12-09

申请人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

发明人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

IPC分类号： H01L27/148

CPC分类号： H01L31/153 ,  G02F2201/58 ,  H01L27/14632 ,  H01L31/112

摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

摘要翻译： 光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度 和第二导电型半导体区域。 光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

公开(公告)号：US07700418B2

公开(公告)日：2010-04-20

申请号：US12385103

申请日：2009-03-31

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78648

摘要： Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.

摘要翻译： 本发明公开了一种制造薄膜半导体器件的方法，该方法包括：在衬底上形成栅电极的第一步骤，在衬底上形成氮氧化硅栅极绝缘膜的第二步骤， 覆盖栅电极，在栅极绝缘膜上形成半导体薄膜的第三步骤，以及在含氧氧化气氛中进行热处理以进行氧化修饰的第四步骤，用于通过与氮氧化硅膜中的氧缺乏部分的氧结合 构成栅极绝缘膜。