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公开(公告)号：US20130039376A1
公开(公告)日：2013-02-14
申请号：US13579259
申请日：2011-02-23
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/0655 , H01S5/2009 , H01S5/2027 , H01S5/3211 , H01S5/34333 , H01S2301/18
摘要： An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier.
摘要翻译： 光电子半导体芯片，后者包括在载体上生长的载体和半导体层序列。 半导体层序列基于氮化物化合物半导体材料，并且包含至少一个用于产生电磁辐射的活性区和间接或直接邻接活性区的至少一个波导层。 形成的波导。 此外，半导体层序列包括邻接p掺杂侧的波导层和/或有源区的n掺杂侧上的n包层的p包层。 波导层间接或直接邻接包层。 在这种情况下，在波导中引导的模式的有效折射率大于载体的折射率。
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公开(公告)号：US08340146B2
公开(公告)日：2012-12-25
申请号：US12679832
申请日：2008-08-27
IPC分类号： H01S5/00
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.
摘要翻译： 本发明涉及辐射发射半导体芯片，其包括用于产生具有波长λ的辐射的有源区和具有不规则排列的结构元件的结构区域，该结构元件包含具有第一折射率n1的第一材料并被包含 具有第二折射率n2的第二材料。 进一步说明了这种类型的半导体芯片的制造方法。
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13.发明授权公开(公告)号：US08335243B2
公开(公告)日：2012-12-18
申请号：US12866589
申请日：2009-02-11
IPC分类号： H01S5/00
CPC分类号： H01L33/0075 , H01L33/20 , H01L33/44 , H01S5/0207 , H01S5/32341 , H01S2304/12
摘要： An optoelectronic semiconductor body comprises a substrate (10), which has on a first main area (12) an epitaxial semiconductor layer sequence (20), suitable for generating electromagnetic radiation, in a first region (14) and a first trench (24) in a second region (22) adjacent to the first region (14), and at least one second trench (30) arranged outside the first region (14). The invention also relates to an optoelectronic semiconductor body and a method for producing an optoelectronic semiconductor body.
摘要翻译： 一种光电子半导体本体包括在第一区域（14）和第一沟槽（24）中在第一主区域（12）上具有适于产生电磁辐射的外延半导体层序列（20）的衬底（10） 在与所述第一区域（14）相邻的第二区域（22）中，以及布置在所述第一区域（14）的外部的至少一个第二沟槽（30）。 本发明还涉及一种光电子半导体体及其制造方法。
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公开(公告)号：US20100278203A1
公开(公告)日：2010-11-04
申请号：US12679832
申请日：2008-08-27
IPC分类号： H01S5/22 , H01L33/44 , H01L21/302
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.
摘要翻译： 本发明涉及辐射发射半导体芯片，其包括用于产生具有波长λ的辐射的有源区和具有不规则排列的结构元件的结构区域，该结构元件包含具有第一折射率n1的第一材料并被包含 具有第二折射率n2的第二材料。 进一步说明了这种类型的半导体芯片的制造方法。
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15.发明申请Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component 审中-公开用于横向切割半导体晶片和光电元件的方法公开(公告)号：US20090117711A1
公开(公告)日：2009-05-07
申请号：US11991489
申请日：2006-08-04
申请人： Volker Harle , Christoph Eichler
发明人： Volker Harle , Christoph Eichler
IPC分类号： H01L21/02
CPC分类号： H01L33/0079 , H01L21/76254 , H01L2924/0002 , H01L2924/00
摘要： In a method for laterally dividing a semiconductor wafer (1), a growth substrate (2) is provided, onto which is grown a semiconductor layer sequence (3) comprising a layer provided as a separating layer (4) and at least one functional semiconductor layer (5) which succeeds the separating layer (4) in the growth direction. Afterward, ions are implanted into the separating layer (4) through the functional semiconductor layer (5), and the semiconductor wafer is divided along the separating layer (4), a part (1a) of the semiconductor wafer (1) which contains the growth substrate (2) being separated.
摘要翻译： 在用于横向分割半导体晶片（1）的方法中，提供生长衬底（2），在其上生长包括设置为分离层（4）的层的半导体层序列（3）和至少一个功能半导体 在成长方向上成功分离层（4）的层（5）。 之后，通过功能半导体层（5）将离子注入到分离层（4）中，沿着分离层（4）分割半导体晶片，将半导体晶片（1）的部分（1a） 生长衬底（2）被分离。
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公开(公告)号：US20070153555A1
公开(公告)日：2007-07-05
申请号：US11639300
申请日：2006-12-15
申请人： Christian Stulz , Christoph Eichler , Erich Suter , Adrian Zuckerberger , Pieder Jorg , Thomas Berner
发明人： Christian Stulz , Christoph Eichler , Erich Suter , Adrian Zuckerberger , Pieder Jorg , Thomas Berner
IPC分类号： H02M3/335
摘要： A polyphase converter circuit having p≧3 phases (R, Y, B) and a converter circuit element provided for each phase (R, Y, B) is specified, each converter circuit element having a rectifier unit, a DC voltage circuit which is connected to the rectifier unit and an inverter unit which is connected to the DC voltage circuit. In addition, a first AC voltage output of each inverter unit forms a phase connection, and second AC voltage outputs of the inverter units are star-connected. In order to produce harmonics which are as low as possible with respect to the fundamental of the voltage and the current of an electrical AC voltage system which is connected on the input side to the converter circuit, n transformers are provided, each having a primary winding and m three-phase secondary windings, where n≧2 and m≧3. Furthermore, p sets of secondary windings are provided, each set of secondary windings being formed by in each case m p three-phase secondary windings of each transformer, and each set of secondary windings with the associated secondary windings being connected to the rectifier unit of a respective converter circuit element.
摘要翻译： 规定了具有p = 3相（R，Y，B）和为每相（R，Y，B）提供的转换器电路元件的多相转换器电路，每个转换器电路元件具有整流单元，DC电压电路 连接到整流单元和连接到直流电压电路的逆变器单元。 此外，每个逆变器单元的第一AC电压输出形成相位连接，并且逆变器单元的第二AC电压输出是星形连接的。 为了产生相对于在输入侧连接到转换器电路的电气交流电压系统的电压和电流的基极尽可能低的谐波，提供n个变压器，每个变压器具有初级绕组 和三相次级绕组，其中n> = 2且m> = 3。 此外，提供p组次级绕组，每组次级绕组在每种情况下都形成
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公开(公告)号：US09397262B2
公开(公告)日：2016-07-19
申请号：US13056724
申请日：2009-07-21
IPC分类号： H01L33/00 , H01L33/24 , H01L21/02 , H01S5/223 , H01L33/48 , H01L31/0236 , H01L33/62 , H01S5/042 , H01S5/20 , H01S5/24 , H01S5/32
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L31/0236 , H01L33/007 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/2031 , H01S5/2231 , H01S5/24 , H01S5/3201 , H01S5/3211 , H01S5/3213 , H01S5/3215 , H01S2301/18 , H01S2304/12 , H01L2924/00
摘要： An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).
摘要翻译： 本文描述了一种光电半导体芯片（1），其包括含有至少一个第一氮化物化合物半导体材料的非平面生长层（2）和包含至少一个第二氮化物化合物半导体 并且布置在生长层（2）上，并且在生长表面（3）上布置有包括结构元件（4）的生长层（2）的布置在活性区（5）上的顶层（7） 面向活动区域（5）。
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公开(公告)号：US08268659B2
公开(公告)日：2012-09-18
申请号：US13011326
申请日：2011-01-21
IPC分类号： H01L21/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
摘要翻译： 一种用于制造边缘发射半导体激光器芯片的方法，其具有载体衬底，布置在载体衬底和边缘发射半导体激光器芯片的部件结构之间的层间隔。 中间层适于提供载体基底和部件结构之间的粘附。 组件结构具有用于产生辐射的活动区域。
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19.发明申请Production Method for a III-V Based Optoelectronic Semiconductor Chip Containing Indium and Corresponding Chip 有权包含铟和相应芯片的基于III-V的光电半导体芯片的生产方法公开(公告)号：US20110260202A1
公开(公告)日：2011-10-27
申请号：US13056724
申请日：2009-07-21
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L31/0236 , H01L33/007 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/2031 , H01S5/2231 , H01S5/24 , H01S5/3201 , H01S5/3211 , H01S5/3213 , H01S5/3215 , H01S2301/18 , H01S2304/12 , H01L2924/00
摘要： An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).
摘要翻译： 本文描述了一种光电半导体芯片（1），其包括含有至少一个第一氮化物化合物半导体材料的非平面生长层（2）和包含至少一个第二氮化物化合物半导体 并且布置在生长层（2）上，并且在生长表面（3）上布置有包括结构元件（4）的生长层（2）的布置在活性区（5）上的顶层（7） 面向活动区域（5）。
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20.发明申请公开(公告)号：US20110051771A1
公开(公告)日：2011-03-03
申请号：US12920312
申请日：2009-01-28
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01S5/0217 , H01S5/0424 , H01S5/12 , H01S5/18308 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic component contains an epitaxial layer sequence (6) based on a nitride compound semiconductor having an active layer (4) and, wherein the epitaxial growth substrate (1) comprises Al1-xGaxN, where 0
摘要翻译： 光电子部件包含基于具有有源层（4）的氮化物半导体的外延层序列（6），并且其中外延生长衬底（1）包括Al 1-x Ga x N，其中0
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