公开(公告)号：US07919857B2

公开(公告)日：2011-04-05

申请号：US11867132

申请日：2007-10-04

申请人： Michael Bauer ,  Peter Strobel ,  Jens Pohl ,  Christian Stuempfl ,  Ludwig Heitzer

发明人： Michael Bauer ,  Peter Strobel ,  Jens Pohl ,  Christian Stuempfl ,  Ludwig Heitzer

IPC分类号： H01L23/06 ,  H01L23/552 ,  H01L21/00

CPC分类号： G01L19/0069 ,  G01L19/147 ,  H01L23/295 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00

摘要： A plastic housing includes plastic external faces and the underside of the plastic housing comprises external contact areas on which external contacts are arranged. The plastic external faces are covered by a closed metal layer apart from the underside, wherein the boundary layer between plastic external faces and the closed metal layer includes exposed electrically conductive inclusions of the plastic of the housing.

摘要翻译： 塑料外壳包括塑料外表面，并且塑料外壳的下侧包括外部接触区域，外部接触件布置在其上。 塑料外表面被与下侧隔开的封闭金属层覆盖，其中塑料外表面和封闭金属层之间的边界层包括外壳的塑料的露出的导电夹杂物。

公开(公告)号：US07749864B2

公开(公告)日：2010-07-06

申请号：US11866853

申请日：2007-10-03

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/30

CPC分类号： H01L23/49562 ,  H01L21/3081 ,  H01L21/78 ,  H01L23/49524 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.

摘要翻译： 公开了一种具有薄型半导体芯片的半导体器件及其制造方法。 在一个实施例中，变薄的半导体芯片具有具有接触区域的顶侧和具有后侧电极的后侧。 在这种情况下，后侧电极经由导电层与电路载体的芯片焊盘粘结地连接。 在另一个实施例中，根据本发明的该半导体器件的薄化半导体芯片具有具有半导体元件结构和通过蚀刻技术图案化的边缘侧的低微细边缘侧区域。

公开(公告)号：US20080242057A1

公开(公告)日：2008-10-02

申请号：US11866853

申请日：2007-10-03

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/304

CPC分类号： H01L23/49562 ,  H01L21/3081 ,  H01L21/78 ,  H01L23/49524 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.

摘要翻译： 公开了一种具有薄型半导体芯片的半导体器件及其制造方法。 在一个实施例中，变薄的半导体芯片具有具有接触区域的顶侧和具有后侧电极的后侧。 在这种情况下，后侧电极经由导电层与电路载体的芯片焊盘粘结地连接。 在另一个实施例中，根据本发明的该半导体器件的薄化半导体芯片具有具有半导体元件结构和通过蚀刻技术图案化的边缘侧的低微细边缘侧区域。

公开(公告)号：US20080054451A1

公开(公告)日：2008-03-06

申请号：US11470511

申请日：2006-09-06

申请人： Michael Bauer ,  Christian Stuempfl ,  Ludwig Heitzer

发明人： Michael Bauer ,  Christian Stuempfl ,  Ludwig Heitzer

IPC分类号： H01L23/34

CPC分类号： H01L25/0657 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： Chip arrangement and method for producing a chip arrangementA chip arrangement comprises a first chip with an electrically operable structure on an active surface of the first chip. The first chip is applied on a carrier area in order to make electrical contact with the electrically operable structure via the carrier area. A second chip has a cutout and is arranged on the carrier area, the first chip being arranged in a cavity formed by the cutout and the carrier area.

摘要翻译： 用于制造芯片布置的芯片布置和方法芯片布置包括在第一芯片的有源表面上具有电可操作结构的第一芯片。 第一芯片被施加在载体区域上，以便经由载体区域与电可操作结构电接触。 第二芯片具有切口并布置在载体区域上，第一芯片布置在由切口和载体区域形成的空腔中。

公开(公告)号：US20080045063A1

公开(公告)日：2008-02-21

申请号：US11867132

申请日：2007-10-04

申请人： Michael Bauer ,  Peter Strobel ,  Jens Pohl ,  Christian Stuempfl ,  Ludwig Heitzer

发明人： Michael Bauer ,  Peter Strobel ,  Jens Pohl ,  Christian Stuempfl ,  Ludwig Heitzer

IPC分类号： H01R13/15

CPC分类号： G01L19/0069 ,  G01L19/147 ,  H01L23/295 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00

摘要： A plastic housing includes plastic external faces and the underside of the plastic housing comprises external contact areas on which external contacts are arranged. The plastic external faces are covered by a closed metal layer apart from the underside, wherein the boundary layer between plastic external faces and the closed metal layer includes exposed electrically conductive inclusions of the plastic of the housing.

摘要翻译： 塑料外壳包括塑料外表面，并且塑料外壳的下侧包括外部接触区域，外部接触件布置在其上。 塑料外表面被与下侧隔开的封闭金属层覆盖，其中塑料外表面和封闭金属层之间的边界层包括外壳的塑料的露出的导电夹杂物。

公开(公告)号：US20080029865A1

公开(公告)日：2008-02-07

申请号：US11760819

申请日：2007-06-11

申请人： Michael Bauer ,  Christian Stuempfl ,  Ludwig Heitzer

发明人： Michael Bauer ,  Christian Stuempfl ,  Ludwig Heitzer

IPC分类号： H01L21/98 ,  H01L23/02

CPC分类号： H01L23/3107 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/48 ,  H01L24/81 ,  H01L24/85 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/85001 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An electronic device is produced by providing a carrier wafer formed from at least a semiconductor material, apply a wiring structure with conductor tracks and contact pads to a top side of the carrier wafer so as to form a plurality of semiconductor device positions arranged in rows and columns along the carrier wafer. Integrated circuit chips are applied in the semiconductor device positions and embedded into a plastic housing composition, thereby forming a composite plate including the integrated circuit chips and the plastic housing composition. After curing the plastic housing composition, the carrier wafer is removed.

摘要翻译： 通过提供由至少半导体材料形成的载体晶片来制造电子器件，将具有导体迹线和接触焊盘的布线结构施加到载体晶片的顶侧，以形成排列成行的多个半导体器件位置， 列沿着载体晶片。 将集成电路芯片应用于半导体器件位置并嵌入到塑料外壳组合物中，从而形成包括集成电路芯片和塑料外壳组合物的复合板。 固化塑料外壳组合物后，移除载体晶片。

公开(公告)号：US20070105394A1

公开(公告)日：2007-05-10

申请号：US11504782

申请日：2006-08-16

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/31

CPC分类号： H01L21/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating particles are first applied to a carrier and the latter is electrostatically charged with the coating particles. The structure including at least one semiconductor chip is charged electrostatically to a polarity opposite to the carrier. The carrier and/or the structure are then moved towards one another in the direction of an area of the structure to be coated until the coating particles jump to the areas of the structure to be coated and adhere there. The coating particles are liquefied by heating the area with coating particles to form a coating.

摘要翻译： 涂覆包括至少一个半导体芯片的结构的方法包括在待涂覆结构的区域上静电沉积涂层颗粒。 首先将涂层颗粒施加到载体上，然后将涂层颗粒带电涂覆颗粒。 包括至少一个半导体芯片的结构被静电充电到与载体相反的极性。 然后将载体和/或结构沿待涂覆结构的区域的方向彼此移动，直到涂层颗粒跳到要涂覆的结构的区域并粘附在那里。 涂覆颗粒通过用涂覆颗粒加热该区域而液化以形成涂层。

公开(公告)号：US20070042568A1

公开(公告)日：2007-02-22

申请号：US11465547

申请日：2006-08-18

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/00

CPC分类号： H01L23/49562 ,  H01L21/3081 ,  H01L21/78 ,  H01L23/49524 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.

摘要翻译： 公开了一种具有薄型半导体芯片的半导体器件及其制造方法。 在一个实施例中，变薄的半导体芯片具有具有接触区域的顶侧和具有后侧电极的后侧。 在这种情况下，后侧电极经由导电层与电路载体的芯片焊盘粘结地连接。 在另一个实施例中，根据本发明的该半导体器件的薄化半导体芯片具有具有半导体元件结构和通过蚀刻技术图案化的边缘侧的低微细边缘侧区域。

公开(公告)号：US08330260B2

公开(公告)日：2012-12-11

申请号：US11780827

申请日：2007-07-20

申请人： Michael Bauer ,  Ludwig Heitzer ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Christian Stuempfl

IPC分类号： H01L23/02

CPC分类号： H01L21/6835 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18165 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for producing an electronic component of a VQFN (very thin quad flat pack no-lead) design includes the following method steps: anchoring at least one integrated circuit element on a sacrificial substrate; contact-connecting the at least one integrated circuit element to the sacrificial substrate with formation of contact-connecting points on the sacrificial substrate; forming an encapsulation on a top side of the sacrificial substrate, the at least one anchored integrated circuit element being mounted on the top side of the sacrificial substrate; removing the sacrificial substrate, thereby uncovering a portion of the contact-connecting points on the underside of the encapsulation.

摘要翻译： 用于制造VQFN（非常薄的四边形扁平封装无引线）设计的电子部件的方法包括以下方法步骤：将至少一个集成电路元件固定在牺牲基板上; 将所述至少一个集成电路元件接触连接到所述牺牲基板，同时在所述牺牲基板上形成接触连接点; 在所述牺牲衬底的顶侧上形成封装，所述至少一个锚定集成电路元件安装在所述牺牲衬底的顶侧; 去除牺牲衬底，从而露出封装底面上的接触连接点的一部分。

公开(公告)号：US20080079175A1

公开(公告)日：2008-04-03

申请号：US11537873

申请日：2006-10-02

申请人： Michael Bauer ,  Christian Stuempfl ,  Ludwig Heitzer

发明人： Michael Bauer ,  Christian Stuempfl ,  Ludwig Heitzer

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/12 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/20106 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A chip (1) or a semiconductor wafer having a contact element (2) for electrical contact-connection is described. In this case, the contact element (2) is covered with an organic layer (3).

摘要翻译： 描述具有用于电接触连接的接触元件（2）的芯片（1）或半导体晶片。 在这种情况下，接触元件（2）被有机层（3）覆盖。