摘要:
A structure of joining material is applied to the back surfaces of semiconductor chips in manufacturing semiconductor devices. The joining material is applied, in finely metered and structured form via a joining material jet appliance, to the back surfaces of the semiconductor chips of a divided semiconductor wafer.
摘要:
A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating particles are first applied to a carrier and the latter is electrostatically charged with the coating particles. The structure including at least one semiconductor chip is charged electrostatically to a polarity opposite to the carrier. The carrier and/or the structure are then moved towards one another in the direction of an area of the structure to be coated until the coating particles jump to the areas of the structure to be coated and adhere there. The coating particles are liquefied by heating the area with coating particles to form a coating.
摘要:
A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.
摘要:
The invention pertains to a method for manufacturing an electronic component with a semiconductor element (1) that is contacted and fixed on a substrate surface (2). The method is characterized in that the rear side of the semiconductor element and/or the substrate surface is coated with an adhesive structure consisting of a first component (3) that solidifies, particularly hardens or cures, and an electrically conductive second component (4) that does not solidify, wherein the semiconductor element is bonded to the substrate surface in a contacting fashion. The electronic component is characterized in that a structured adhesive layer arranged between the semiconductor element and the substrate surface comprises a solidifying first component (3) and an electrically conductive non-solidifying second component (4).
摘要:
A method for producing an electronic component of a VQFN (very thin quad flat pack no-lead) design includes the following method steps: anchoring at least one integrated circuit element on a sacrificial substrate; contact-connecting the at least one integrated circuit element to the sacrificial substrate with formation of contact-connecting points on the sacrificial substrate; forming an encapsulation on a top side of the sacrificial substrate, the at least one anchored integrated circuit element being mounted on the top side of the sacrificial substrate; removing the sacrificial substrate, thereby uncovering a portion of the contact-connecting points on the underside of the encapsulation.
摘要:
The invention pertains to a method for manufacturing an electronic component with a semiconductor element (1) that is contacted and fixed on a substrate surface (2). The method is characterized in that the rear side of the semiconductor element and/or the substrate surface is coated with an adhesive structure consisting of a first component (3) that solidifies, particularly hardens or cures, and an electrically conductive second component (4) that does not solidify, wherein the semiconductor element is bonded to the substrate surface in a contacting fashion. The electronic component is characterized in that a structured adhesive layer arranged between the semiconductor element and the substrate surface comprises a solidifying first component (3) and an electrically conductive non-solidifying second component (4).
摘要:
An electronic circuit in a package-in-package configuration and a production method is disclosed. One embodiment provides an arrangement enveloped by an encapsulation and composed of at least one semiconductor element on an element carrier, at least one leadframe with at least one inner contact-connection, at least one inner lead running within the encapsulation, and at least one outer contact-connection led out from the encapsulation. The inner lead has an exposed inner lead section which can be contact-connected from the outer side of the package-in-package configuration.
摘要:
An electronic circuit in a package-on-package configuration includes: a lower subassembly with a first electronic element, a first wiring carrier, a first housing with a first redistribution layer and an arrangement of solder balls disposed on the first redistribution layer and an upper subassembly with a second electronic element mounted on the lower subassembly. A method for producing the electronic circuit in a package-on-package configuration includes: adhering an upper side of the first electronic element to an underside of the first redistribution layer via a radiation-crosslinking thermoplastic adhesive.
摘要:
An electronic circuit in a package-in-package configuration and a production method is disclosed. One embodiment provides an arrangement enveloped by an encapsulation and composed of at least one semiconductor element on an element carrier, at least one leadframe with at least one inner contact-connection, at least one inner lead running within the encapsulation, and at least one outer contact-connection led out from the encapsulation. The inner lead has an exposed inner lead section which can be contact-connected from the outer side of the package-in-package configuration.
摘要:
A structure of joining material is applied to the back surfaces of semiconductor chips in manufacturing semiconductor devices. The joining material is applied, in finely metered and structured form via a joining material jet appliance, to the back surfaces of the semiconductor chips of a divided semiconductor wafer.