中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

44 records (took 0.017 seconds)

    Integrated assemblies and methods of forming integrated assemblies
    11.
    发明授权
    Integrated assemblies and methods of forming integrated assemblies 有权

    公开(公告)号：US10229923B2

    公开(公告)日：2019-03-12

    申请号：US15818338

    申请日：2017-11-20

    Applicant: Micron Technology, Inc.

    Inventor： Justin B. Dorhout ,  Kunal R. Parekh ,  Martin C. Roberts ,  Mohd Kamran Akhtar ,  Chet E. Carter ,  David Daycock

    IPC: H01L27/11551 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/1157

    Abstract: Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.

    Semiconductor constructions
    13.
    发明授权
    Semiconductor constructions 有权

    公开(公告)号：US09679852B2

    公开(公告)日：2017-06-13

    申请号：US14321466

    申请日：2014-07-01

    Applicant: Micron Technology, Inc.

    Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

    IPC: H01L23/482 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

    CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

    Integrated assemblies and semiconductor memory devices
    15.
    发明授权
    Integrated assemblies and semiconductor memory devices 有权

    公开(公告)号：US11594536B2

    公开(公告)日：2023-02-28

    申请号：US17197253

    申请日：2021-03-10

    Applicant: Micron Technology, Inc.

    Inventor： Yong Mo Yang ,  Mohd Kamran Akhtar ,  Huyong Lee ,  Sangmin Hwang ,  Song Guo

    IPC: H01L27/092 ,  H01L21/8238 ,  G11C7/06

    Abstract: Some embodiments include an integrated assembly having a CMOS region with fins extending along a first direction, and with gating structures extending across the fins. A circuit arrangement is associated with the CMOS region and includes a pair of the gating structures spaced by an intervening region having a missing gating structure. The circuit arrangement has a first dimension along the first direction. A second region is proximate to the CMOS region. Conductive structures are associated with the second region. Some of the conductive structures are electrically coupled with the circuit arrangement. A second dimension is a distance across said some of the conductive structures along the first direction. The conductive structures and the circuit arrangement are aligned such that the second dimension is substantially the same as the first dimension. Some embodiments include methods of forming integrated assemblies.

    Integrated Assemblies and Methods of Forming Integrated Assemblies
    18.
    发明申请
    Integrated Assemblies and Methods of Forming Integrated Assemblies 审中-公开

    公开(公告)号：US20200321347A1

    公开(公告)日：2020-10-08

    申请号：US16907858

    申请日：2020-06-22

    Applicant: Micron Technology, Inc.

    Inventor： Justin B. Dorhout ,  Kunal R. Parekh ,  Martin C. Roberts ,  Mohd Kamran Akhtar ,  Chet E. Carter ,  David Daycock

    IPC: H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11553

    Abstract: Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.

    Integrated Assemblies Having Dielectric Regions Along Conductive Structures, and Methods of Forming Integrated Assemblies
    19.
    发明申请
    Integrated Assemblies Having Dielectric Regions Along Conductive Structures, and Methods of Forming Integrated Assemblies 审中-公开

    公开(公告)号：US20200286898A1

    公开(公告)日：2020-09-10

    申请号：US16880900

    申请日：2020-05-21

    Applicant: Micron Technology, Inc.

    Inventor： Guangjun Yang ,  Mohd Kamran Akhtar ,  Silvia Borsari ,  Alex J. Schrinsky

    IPC: H01L27/108

    Abstract: Some embodiments include a method of forming an integrated assembly. A construction is formed to include a conductive structure having a top surface, and a pair of sidewall surfaces extending downwardly from the top surface. Insulative material is over the top surface, and rails are along the sidewall surfaces. The rails include sacrificial material. The sacrificial material is removed to leave openings. Sealant material is formed to extend within the openings. The sealant material has a lower dielectric constant than the insulative material. Some embodiments include an integrated assembly having a conductive structure with a top surface and a pair of opposing sidewall surfaces extending downwardly from the top surface. Insulative material is over the top surface. Voids are along the sidewall surfaces and are capped by sealant material. The sealant material has a lower dielectric constant than the insulative material.

Patent Agency Ranking