公开(公告)号：US20160111632A1

公开(公告)日：2016-04-21

申请号：US14516347

申请日：2014-10-16

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括磁性，二次氧化物和吸气剂种子区域。 在形成期间，由于吸气剂物质引起的化学亲和力，扩散物质从前体磁性材料转移到吸气剂种子区域。 磁性材料的耗尽使得耗尽的磁性材料能够通过晶体结构从邻近的结晶材料传播而结晶，而不会受到现在富集的吸气剂种子区域的干扰。 这促进了高隧道磁阻和高磁各向异性强度。 在形成期间，由于由另一吸气剂物质引起的化学亲和力，另外的扩散物质从前体氧化物材料转移到吸气剂种子区域。 氧化物材料的耗尽使电池结构中的电阻降低和阻尼减小。 还公开了制造方法和半导体器件。

公开(公告)号：US20150340372A1

公开(公告)日：2015-11-26

申请号：US14282520

申请日：2014-05-20

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/115 ,  H01L49/02

CPC classification number: H01L27/11507 ,  H01L21/28291 ,  H01L27/1159 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

Abstract translation: 铁电存储器件包括多个存储单元。 每个存储单元包括设置在至少一个电极附近的至少一个电极和铁电晶体材料。 铁电晶体材料可以通过能够通过对至少一个电极进行充电而产生的电场来极化。 铁电晶体材料包括极性和手性晶体结构，通过反转中心不具有反转对称性。 铁电晶体材料基本上不包括铪（Hf）和锆（Zr）中的至少一种的氧化物。

公开(公告)号：US20240381781A1

公开(公告)日：2024-11-14

申请号：US18782478

申请日：2024-07-24

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attractor species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attractor species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20240357809A1

公开(公告)日：2024-10-24

申请号：US18637129

申请日：2024-04-16

Applicant: Micron Technology, Inc.

Inventor： Zeyar Lin Aung ,  Kaiming Luo ,  Saurabh Jagdishbhai Kasodariya ,  Sumeet C. Pandey ,  Brittany L. Kohoutek ,  Yuwei Ma ,  Kyle A. Ritter

IPC: H10B43/20

CPC classification number: H10B43/20

Abstract: Methods, systems, and devices for support structures for tier deflection in a memory system are described. The memory system may include a word line contact that extends through a stack of materials and lands on a tier of a word line. The word line contact may be between four support structures that form a diamond around the word line contact. Two support structures that form opposite vertices of the diamond may align centrally with the word line contact in a lateral direction and two other support structures that form opposite vertices of the diamond may align centrally with the word line contact in a longitudinal direction.

公开(公告)号：US20220344451A1

公开(公告)日：2022-10-27

申请号：US17236865

申请日：2021-04-21

Applicant: Micron Technology, Inc.

Inventor： Richard Beeler ,  Matthew N. Rocklein ,  Timothy A. Quick ,  An-Jen B. Cheng ,  Sumeet C. Pandey

IPC: H01L49/02 ,  H01L27/108

Abstract: Some embodiments include dielectric material having a first region containing HfO and having a second region containing ZrO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. The first region contains substantially no Zr, and the second region contains substantially no Hf. Some embodiments include capacitors having a first electrode, a second electrode, and a dielectric material between the first and second electrodes. The dielectric material includes one or more first regions and one or more second regions. The first region(s) contain(s) Hf and substantially no Zr. The second region(s) contain(s) Zr and substantially no Hf. Some embodiments include memory arrays.

公开(公告)号：US11257962B2

公开(公告)日：2022-02-22

申请号：US16401844

申请日：2019-05-02

Applicant: Micron Technology, Inc.

Inventor： Yunfei Gao ,  Kamal M. Karda ,  Stephen J. Kramer ,  Gurtej S. Sandhu ,  Sumeet C. Pandey ,  Haitao Liu

IPC: H01L29/786 ,  G11C13/00 ,  H01L29/16 ,  H01L51/05

Abstract: A transistor comprises a channel region between a source region and a drain region, a dielectric material adjacent to the channel region, an electrode adjacent to the dielectric material, and an electrolyte between the dielectric material and the electrode. Related semiconductor devices comprising at least one transistors, related electronic systems, and related methods are also disclosed.

公开(公告)号：US10347689B2

公开(公告)日：2019-07-09

申请号：US15660417

申请日：2017-07-26

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

Abstract: A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US09991122B2

公开(公告)日：2018-06-05

申请号：US15253454

申请日：2016-08-31

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey

IPC: H01L21/26 ,  H01L21/268 ,  H01L21/477 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/268 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02675 ,  H01L21/428 ,  H01L21/477 ,  H01L29/0665

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

公开(公告)号：US20180151798A1

公开(公告)日：2018-05-31

申请号：US15364153

申请日：2016-11-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey

IPC: H01L43/10 ,  H01L43/08

CPC classification number: H01L43/10 ,  H01L43/08

Abstract: Some embodiments include a magnetic tunnel junction device having a first magnetic electrode, a second magnetic electrode, and a tunnel insulator material between the first and second magnetic electrodes. A tungsten-containing material is directly against one of the magnetic electrodes. In some embodiments the tungsten-containing material may be in a first crystalline lattice arrangement, and the directly adjacent magnetic electrode may be in a second crystalline lattice arrangement different from said first crystalline lattice arrangement. In some embodiments the tungsten-containing material, the first magnetic electrode, the tunnel insulator material and the second magnetic electrode all comprise a common crystalline lattice arrangement.

公开(公告)号：US20170133383A1

公开(公告)日：2017-05-11

申请号：US14934659

申请日：2015-11-06

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Gurtej S. Sandhu ,  Wayne I. Kinney ,  Karl W. Holtzclaw

IPC: H01L27/108 ,  G11C11/407

CPC classification number: H01L27/10808 ,  G11C11/404 ,  G11C11/407 ,  H01L28/65

Abstract: Volatile memory cells including dielectric materials exhibiting a nonlinear capacitance as a function of voltage. The volatile memory cells comprise a source region and a drain region within a substrate and a capacitor coupled to one of the source region and the drain region. The capacitor includes a charge storage material disposed between a pair of electrodes. The charge storage material has a crystal structure comprising an oxide of zirconium, hafnium, and bismuth, and is configured and formulated to transition from a first phase to a second phase exhibiting a higher capacitance than the first phase responsive to application of an electrical field. A digit line is electrically coupled to at least one electrode of the pair of electrodes and one of the source region and the drain region. Semiconductor devices and systems including the volatile memory cells and related methods of operating the volatile memory cells are also described.