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41 条记录 (耗时 0.031 秒)

    Method of cleaning reaction tube
    12.
    发明授权
    Method of cleaning reaction tube 失效
    反应管清洗方法

    公开(公告)号：US5380370A

    公开(公告)日：1995-01-10

    申请号：US54229

    申请日：1993-04-30

    申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

    发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

    IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

    CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

    摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

    摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

    Positive-working photoimageable bottom antireflective coating
    13.
    发明授权
    Positive-working photoimageable bottom antireflective coating 有权
    正面工作的可光成像底部抗反射涂层

    公开(公告)号：US08632948B2

    公开(公告)日：2014-01-21

    申请号：US12570923

    申请日：2009-09-30

    申请人： Munirathna Padmanaban ,  Srinivasan Chakrapani ,  Francis M. Houlihan ,  Shinji Miyazaki ,  Edward Ng ,  Mark O. Neisser

    发明人： Munirathna Padmanaban ,  Srinivasan Chakrapani ,  Francis M. Houlihan ,  Shinji Miyazaki ,  Edward Ng ,  Mark O. Neisser

    IPC分类号： G03F7/039 ,  G03F7/30 ,  C08F20/20

    CPC分类号： G03F7/091

    摘要： The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.

    摘要翻译： 本发明涉及能够在碱性水溶液中通过显影形成图案的可光成像抗反射涂料组合物，其包含（i）可溶于涂布溶剂中的聚合物A，其包含发色团，交联部分和任选的可裂解基团， 在酸或热条件下产生有助于聚合物在碱性水溶液中的溶解度的功能; （ii）至少一种光致酸发生剂; （iii）交联剂; （iv）任选的热酸产生剂; （v）聚合物B，其在显影前可溶于碱性水溶液，其中聚合物B与聚合物A不可混溶并可溶于涂布溶剂中; （vi）涂料溶剂组合物，和（vii）任选的猝灭剂。 本发明还涉及用于对抗反射涂层进行成像的方法。

    Vertical heat processing apparatus and method for using the same
    16.
    发明申请
    Vertical heat processing apparatus and method for using the same 有权
    立式热处理装置及其使用方法

    公开(公告)号：US20080008566A1

    公开(公告)日：2008-01-10

    申请号：US11822282

    申请日：2007-07-03

    申请人： Atsushi Endo ,  Yoshiyuki Fujita ,  Shinji Miyazaki

    发明人： Atsushi Endo ,  Yoshiyuki Fujita ,  Shinji Miyazaki

    IPC分类号： H01L21/67 ,  F27D11/12

    CPC分类号： H01L21/67248 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/67115

    摘要： A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.

    摘要翻译： 一种垂直加热装置，用于对多个目标基板进行热处理，所述垂直加热装置一起包括垂直处理容器，其构造成容纳所述目标基板并且在底部具有转移口; 保持器，被构造成在处理容器内沿垂直方向间隔地支撑目标基板; 以及加热器，其设置在所述处理容器的周围，并且被配置为通过所述处理容器的侧壁提供热射线，以便加热所述处理容器的内部。 加热器和处理容器的下端侧之间设置有热缓冲部件，以包围下端侧，并且构造为降低加工器和加工容器内的目标基板之间的热线的下端侧的透射率。

    Optical recording medium and read/write method therefor
    17.
    发明授权
    Optical recording medium and read/write method therefor 失效
    光记录介质及其记录/再现方法

    公开(公告)号：US6042921A

    公开(公告)日：2000-03-28

    申请号：US131865

    申请日：1998-08-10

    申请人： Jiro Yoshinari ,  Masanori Kosuda ,  Hiroshi Shingai ,  Shinji Miyazaki

    发明人： Jiro Yoshinari ,  Masanori Kosuda ,  Hiroshi Shingai ,  Shinji Miyazaki

    IPC分类号： G11B7/254 ,  G11B5/62 ,  G11B7/00 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/257 ,  B32B3/00

    CPC分类号： G11B5/62 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： The invention provides a phase charge type optical recording medium comprising on both sides of a recording layer dielectric layers, each containing zinc sulfide and silicon oxide as main components. The medium comprises on a substrate 2 a first dielectric layer 31, a recording layer 4, a second dielectric layer 32 and a reflective layer 5 made up of a metal. The first dielectric layer 32 comprises a dielectric lamina 1a on a substrate 2 side thereof and a dielectric lamina 1b on a recording layer 4 side thereof. The dielectric lamina 1a has a silicon oxide content of 2 to less than 40 mol %, the dielectric lamina 1b has a silicon oxide content of 40 to 100 mol %, and the second dielectric layer 32 has a silicon oxide content of 2 to 50 mol % and a thickness of 10 to 35 nm. The number of overwritable cycles can be increased.

    摘要翻译： 本发明提供了一种相位电荷型光学记录介质，其包括在记录层电介质层的两侧，每个记录层包含硫化锌和氧化硅作为主要成分。 介质在基板2上包括由金属构成的第一介电层31，记录层4，第二电介质层32和反射层5。 第一电介质层32包括在其基板2侧上的电介质层1a和在其记录层4侧上的电介质层1b。 电介质层1a的氧化硅含量为2〜小于40mol％，电介质层1b的氧化硅含量为40〜100mol％，第二电介质层32的氧化硅含量为2〜50mol ％，厚度10〜35nm。 可以增加可重写周期的数量。

    Recording/reproducing method of magneto-optical recording medium and drive system for magneto-optical recording medium
    18.
    发明授权
    Recording/reproducing method of magneto-optical recording medium and drive system for magneto-optical recording medium 失效
    磁光记录介质的记录/再现方法和用于磁光记录介质的驱动系统

    公开(公告)号：US5963512A

    公开(公告)日：1999-10-05

    申请号：US93096

    申请日：1998-06-08

    申请人： Hiroyasu Inoue ,  Shinji Miyazaki ,  Jiro Yoshinari

    发明人： Hiroyasu Inoue ,  Shinji Miyazaki ,  Jiro Yoshinari

    IPC分类号： G11B11/10 ,  G11B5/00 ,  G11B11/105 ,  G11B11/00

    CPC分类号： G11B11/10515 ,  G11B11/10508 ,  G11B11/10517 ,  G11B11/10586 ,  G11B11/10595 ,  G11B5/00

    摘要： In the present invention, data transmission rate is increased in the recording of the magneto-optical recording media in which the reproduction is accomplished by applying a modulated magnetic field in a scheme of "copying of the recorded magnetic domain.fwdarw.enlargement of the copied magnetic domain.fwdarw.reproduction of the copied magnetic domain .fwdarw.size reduction and disappearance of the copied magnetic domain". The recording/reproducing method of the present invention is adapted for use with a magneto-optical recording medium having a magnetic lamination comprising a recording layer and an amplification layer wherein recording is accomplished by applying a modulated recording magnetic field, and reproduction is accomplished by applying 1 cycle of the modulated magnetic field (reproduction magnetic field+erase magnetic field) per 1 record mark (1 bit). In the recording/reproducing method of the present invention, the recording and the reproduction are conducted such that:V.sub.R /V.sub.P >1when V.sub.R is linear velocity of the magneto-optical recording medium in relation to said recording magnetic field, and V.sub.P is linear velocity of the magneto-optical recording medium in relation to modulated magnetic field.

    摘要翻译： 在本发明中，通过在“复制所记录的磁畴的复制磁场 - 扩大复制的磁场”的方案中应用调制的磁场来实现再现的磁光记录介质的记录中的数据传输速率增加 复制磁畴的域 - >复制 - 复制磁畴的尺寸减小和消失。 本发明的记录/再现方法适用于具有包括记录层和放大层的磁性层叠的磁光记录介质，其中通过施加调制记录磁场来实现记录，并且通过应用 每1个记录标记（1位）的调制磁场（再现磁场+擦除磁场）的1个周期。 在本发明的记录/再现方法中，进行记录和再现，使得当VR是与磁记录介质相对于所述记录磁场的线速度时，VR / VP> 1，并且VP是线速度 相对于调制磁场的磁光记录介质。

    Chemical vapor growth apparatus having an exhaust device including trap
    19.
    发明授权
    Chemical vapor growth apparatus having an exhaust device including trap 失效
    具有排气装置的化学气相生长装置包括捕集器

    公开(公告)号：US5250323A

    公开(公告)日：1993-10-05

    申请号：US956555

    申请日：1992-10-05

    申请人： Shinji Miyazaki

    发明人： Shinji Miyazaki

    IPC分类号： C23C16/44 ,  C23C16/00

    CPC分类号： C23C16/4402 ,  C23C16/4412

    摘要： A chemical vapor growth apparatus comprises a process chamber for carrying out a chemical vapor growth process; source gas inlet for introducing at least one source gas to the process chamber from a gas source; source gas flow-rate controller for controlling the flow-rate of the source gas to be sent to the process chamber through the inlet; a first exhaust for exhausting the source gas remaining in the inlet and in the gas flow-rate controller, connected to the source gas inlet and the source gas flow-rate controller; a trap for absorbing the source gas remaining in the source gas inlet and the gas flow-rate controller, provided in the first exhaust; and a second exhaust for exhausting gases and particles generated by chemical reaction from the process chamber, the second exhaust being connected to the process chamber and to a vacuum pump.

    摘要翻译： 化学气相生长装置包括用于进行化学气相生长过程的处理室; 源气体入口，用于从气体源将至少一种源气体引入处理室; 源气体流量控制器，用于控制通过入口送到处理室的源气体的流量; 用于排出残留在入口和气体流量控制器中的源气体的第一废气，其连接到源气体入口和源气体流量控制器; 用于吸收留在源气体入口中的源气体和设置在第一排气口中的气体流量控制器的阱; 以及用于从处理室排出由化学反应产生的气体和颗粒的第二排气，第二排气连接到处理室和真空泵。

    Vertical heat treatment apparatus
    20.
    发明授权
    Vertical heat treatment apparatus 失效
    立式热处理设备

    公开(公告)号：US5048800A

    公开(公告)日：1991-09-17

    申请号：US563345

    申请日：1990-08-07

    申请人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

    发明人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

    IPC分类号： C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/00 ,  F27D1/00 ,  H01L21/00

    CPC分类号： H01L21/67115 ,  C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/0025 ,  F27D1/0033

    摘要： A vertical heat treatment apparatus includes a reaction furnace constituted by a reaction chamber having an inner tube and an outer tube and a heater arranged outside the reaction chamber, a manifold communicating with a lower portion of the reaction chamber to support the reaction chamber and a gas being supplied and exhausted through the mainfold, a hollow vessel, arranged together with the boat in the reaction furnace, for supporting a lower end of a boat having objects, and a plurality of first heat-insulating members detachably arranged in the hollow vessel, wherein the number of the first insulating members is adjusted to adjust a heat-insulating effect. The first heat-insulating member includes a fin unit constituted by fins horizontally arranged at predetermined intervals and spacers for keeping the intervals between the fins.

    摘要翻译： 立式热处理装置包括由反应室构成的反应炉，该反应室具有内管和外管以及布置在反应室外部的加热器，与反应室的下部连通以支撑反应室的歧管和气体 通过主折叠供应和排出的中空容器，与反应炉中的船一起布置的用于支撑具有物体的船的下端的中空容器，以及可拆卸地布置在中空容器中的多个第一绝热构件，其中 调整第一绝缘构件的数量以调节绝热效果。 第一绝热构件包括由以预定间隔水平布置的翅片构成的翅片单元和用于保持翅片之间的间隔的间隔件。