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    USING MILLISECOND PULSED LASER WELDING IN MEMS PACKAGING
    12.
    发明申请
    USING MILLISECOND PULSED LASER WELDING IN MEMS PACKAGING 有权
    在MEMS包装中使用MILLISECOND脉冲激光焊接

    公开(公告)号：US20140126167A1

    公开(公告)日：2014-05-08

    申请号：US13982427

    申请日：2012-01-31

    Applicant: Payam Bozorgi ,  Noel C. MacDonald

    Inventor： Payam Bozorgi ,  Noel C. MacDonald

    IPC: B81C3/00 ,  H05K1/18 ,  B23K26/24

    CPC classification number: B81C3/001 ,  B23K26/0622 ,  B23K26/206 ,  B23K26/24 ,  B23K26/32 ,  B23K2103/14 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/038 ,  H01L21/50 ,  H01L23/10 ,  H01L24/97 ,  H01L2924/01019 ,  H01L2924/01065 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/16315 ,  H05K1/18 ,  H01L2924/00

    Abstract: A new packaging method for a wide range of MEMS for application on both the wafer and device scale. Titanium is used as the packaging material and both silicon and titanium MEMS devices are integrated on to a titanium substrate. A Nd:YAG pulsed laser is used to micro-weld the titanium cap to the substrate. A three-dimensional time dependent model of heat flow during laser beam welding is presented. The heat transfer and parametric design capabilities of COMSOL were employed for this purpose. Model calculations are compared and calibrated with experimental results of pulsed laser welds. The functionality and hermiticity of the proposed packaging was evaluated by packaging a self actuated Veeco Instrument AFM cantilever tip. The experimental measurements show that the resonance frequency and quality factor of the device stay the same before and after packaging and the applied technique has no effect on the device.

    Abstract translation: 一种适用于晶圆和器件规模应用的广泛MEMS的新型封装方法。 钛用作包装材料，硅和钛MEMS器件都集成在钛基板上。 使用Nd：YAG脉冲激光将钛盖微焊接到基板上。 提出了激光束焊接过程中热流三维时间依赖模型。 为此，采用COMSOL的传热和参数设计能力。 模型计算与脉冲激光焊接的实验结果进行比较和校准。 通过包装自动驱动的Veeco仪器AFM悬臂尖端来评估所提出的包装的功能和隐性。 实验测量结果表明，器件的共振频率和品质因数在包装前后保持不变，应用技术对设备无影响。

    Small scale wires with microelectromechanical devices
    15.
    发明授权
    Small scale wires with microelectromechanical devices 有权
    小型电线与微机电装置

    公开(公告)号：US07339244B2

    公开(公告)日：2008-03-04

    申请号：US11340135

    申请日：2006-01-26

    Applicant: Kanakasabapathi Subramanian ,  Noel C. MacDonald

    Inventor： Kanakasabapathi Subramanian ,  Noel C. MacDonald

    IPC: H01L27/14 ,  H01L29/82

    CPC classification number: B81C1/00142 ,  B81B2203/0361 ,  B81C1/00071 ,  B81C1/00111 ,  B81C2201/0112 ,  Y10S977/70 ,  Y10S977/762

    Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.

    Abstract translation: 蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。 在一个实施例中，使用掩模来限定单晶硅晶片中的线。 该过程在对应于循环的线的侧壁上产生波纹。 在一个实施例中，线被氧化以形成对应于每个纹波的硅线。 在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。 通过氧化相邻的波纹侧壁形成流体通道。 同样的掩模也用于形成用于MEMS器件的其它结构。

    Three dimensional high aspect ratio micromachining
    16.
    发明授权
    Three dimensional high aspect ratio micromachining 有权
    三维高宽比微加工

    公开(公告)号：US07045466B2

    公开(公告)日：2006-05-16

    申请号：US10607838

    申请日：2003-06-27

    Applicant: Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

    Inventor： Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

    IPC: H01L21/302

    CPC classification number: B81C1/00626 ,  B81B2201/033 ,  H01L21/3086

    Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.

    Abstract translation: 通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化，直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物，留下多层结构。 在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。

    Multiple-level actuators and clamping devices
    17.
    发明授权
    Multiple-level actuators and clamping devices 失效
    多级执行器和夹紧装置

    公开(公告)号：US06767614B1

    公开(公告)日：2004-07-27

    申请号：US10021311

    申请日：2001-12-19

    Applicant: Wolfgang M. J. Hofmann ,  Hercules Neves ,  Noel C. MacDonald ,  Scott G. Adams

    Inventor： Wolfgang M. J. Hofmann ,  Hercules Neves ,  Noel C. MacDonald ,  Scott G. Adams

    IPC: B32B300

    CPC classification number: B81C1/0015 ,  B81B2201/033 ,  B81B2203/0136 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0198 ,  Y10T428/13 ,  Y10T428/24273 ,  Y10T428/24562 ,  Y10T428/24744 ,  Y10T428/24802

    Abstract: Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.

    Abstract translation: 公开了用于微机电结构的改进的制造工艺和通过改进的工艺制造的独特结构。 在其最简单的形式中，制造工艺是对已知SCREAM工艺的修改，扩展并以这样的方式使用，以便产生可被称为“组合蚀刻”的组合垂直蚀刻和释放RIE工艺。 使用本发明的方法制造单级微机械结构包括形成和释放悬浮的单晶硅元件的新型干蚀刻工艺，将垂直硅反应离子蚀刻（Si-RIE）和释放蚀刻相组合的工艺消除 需要在悬浮结构的两侧沉积并排列二氧化硅掩模层，并降低由沉积的二氧化硅膜引起的悬浮结构中的机械应力。

    Motion amplification based sensors
    18.
    发明授权
    Motion amplification based sensors 有权
    基于运动放大的传感器

    公开(公告)号：US06309077B1

    公开(公告)日：2001-10-30

    申请号：US09669972

    申请日：2000-09-25

    Applicant: Mohammed T. A. Saif ,  Noel C. MacDonald

    Inventor： Mohammed T. A. Saif ,  Noel C. MacDonald

    IPC: G02B7182

    CPC classification number: G01P15/0802 ,  G01P15/0894 ,  H01H1/0036 ,  H01H2003/463 ,  Y10S977/70 ,  Y10S977/724

    Abstract: A micromechanical micromotion amplifier has an integrated structure formed primarily of silicon and comprises a plurality of long slender flexible beams which are released from a silicon substrate for movement with respect to fixed points of reference upon the substrate. By arranging these beams in cooperating perpendicular pairs as micromotion amplifier stages, an input axial force/movement applied to a moveable free end of a first beam generates a transverse motion or buckling movement which in turn, translates or induces buckling movement in the connected second beam. The resultant output buckling of the second beam is an order of magnitude greater than the initial movement applied as an input to the first beam. Thus, beam pairs can be arranged as micromotion amplifier stages to amplify minute amounts of movement. Beam pairs or stages can also be cascaded to form integrated devices capable of producing greatly increased measurable effects in response to minute amounts of input. Such devices are useful as highly sensitive integrated micro-sensors for measuring a wide variety of parameters such as temperature, pressure, humidity, impact or acceleration. Such devices may also form the basis of highly sensitive micro-switches.

    Abstract translation: 微机电微动力放大器具有主要由硅形成的整体结构，并且包括从硅衬底释放的多个长细长的柔性梁，用于相对于衬底上的固定参考点移动。 通过将这些光束配置为协作的垂直对作为微动力放大器级，施加到第一光束的可移动自由端的输入轴向力/运动产生横向运动或屈曲运动，其进而平移或引起所连接的第二光束中的屈曲运动 。 第二光束的合成输出屈曲比作为第一光束的输入的初始移动大一个数量级。 因此，波束对可以被布置为微运动放大器级以放大微小的运动量。 光束对或阶段也可以级联以形成能够响应于微小量的输入而产生大大增加的可测量效果的集成器件。 这样的器件可用作用于测量各种参数（如温度，压力，湿度，冲击或加速度）的高灵敏度集成微传感器。 这样的设备也可以形成高灵敏度的微型开关的基础。

    Trench isolation for micromechanical devices
    19.
    发明授权
    Trench isolation for micromechanical devices 有权
    微机械装置的沟槽隔离

    公开(公告)号：US06239473B1

    公开(公告)日：2001-05-29

    申请号：US09231082

    申请日：1999-01-14

    Applicant: Scott G. Adams ,  Kevin A. Shaw ,  Russell Y. Webb ,  Bryan W. Reed ,  Noel C. MacDonald ,  Timothy J. Davis

    Inventor： Scott G. Adams ,  Kevin A. Shaw ,  Russell Y. Webb ,  Bryan W. Reed ,  Noel C. MacDonald ,  Timothy J. Davis

    IPC: H01L2984

    CPC classification number: H01L21/76224 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C1/00142 ,  B81C1/00698

    Abstract: An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.

    Abstract translation: 提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。 在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。 在结构定义之前，通过金属图案化步骤并入多个导电路径。 本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。 通过很少的修改，本发明可以用于完全集成的器件的集成电路制造序列。

    Micromechanical accelerometer for automotive applications
    20.
    发明授权
    Micromechanical accelerometer for automotive applications 有权
    用于汽车应用的微机械加速度计

    公开(公告)号：US06170332B2

    公开(公告)日：2001-01-09

    申请号：US09552578

    申请日：2000-04-19

    Applicant: Noel C. MacDonald ,  Kevin A. Shaw ,  Scott G. Adams

    Inventor： Noel C. MacDonald ,  Kevin A. Shaw ,  Scott G. Adams

    IPC: G01P1508

    CPC classification number: G01P15/131 ,  B81B2201/0235 ,  B81B2203/051 ,  B81C1/00619 ,  B81C2201/0132 ,  G01P1/006 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

    Abstract: A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.

    Abstract translation: 从单个硅晶片提供微机电电容式加速度计。 在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。 在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。 加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。 微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

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