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    METHOD OF PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS
    13.
    发明申请
    METHOD OF PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS 审中-公开

    公开(公告)号：US20170207363A1

    公开(公告)日：2017-07-20

    申请号：US15327697

    申请日：2015-07-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Lorenzo Zini ,  Alexander Frey ,  Joachim Hertkorn ,  Berthold Hahn

    IPC: H01L33/00 ,  H01L33/32 ,  H01L33/62

    CPC classification number: H01L33/0079 ,  H01L33/32 ,  H01L33/62 ,  H01L2933/0066 ,  H01S5/0201 ,  H01S5/0217

    Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.

    SEMICONDUCTOR COMPONENT, DEVICE HAVING A SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING SEMICONDUCTOR COMPONENTS
    15.
    发明申请
    SEMICONDUCTOR COMPONENT, DEVICE HAVING A SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING SEMICONDUCTOR COMPONENTS 有权

    公开(公告)号：US20220328738A1

    公开(公告)日：2022-10-13

    申请号：US17639160

    申请日：2020-08-19

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Berthold Hahn ,  Georg Bogner

    IPC: H01L33/58 ,  H01L33/22 ,  H01L33/40 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62 ,  H01L33/00

    Abstract: A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.

    Component and method of producing components
    16.
    发明授权
    Component and method of producing components 有权

    公开(公告)号：US10535806B2

    公开(公告)日：2020-01-14

    申请号：US15742106

    申请日：2016-07-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christian Leirer ,  Korbinian Perzlmaier ,  Anna Kasprzak-Zablocka ,  Berthold Hahn ,  Thomas Schwarz

    IPC: H01L33/62 ,  H01L33/48 ,  H01L33/52 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/50 ,  H01L33/64

    Abstract: A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.

    Method of producing optoelectronic semiconductor chips
    17.
    发明授权
    Method of producing optoelectronic semiconductor chips 有权

    公开(公告)号：US10411155B2

    公开(公告)日：2019-09-10

    申请号：US15327697

    申请日：2015-07-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Lorenzo Zini ,  Alexander Frey ,  Joachim Hertkorn ,  Berthold Hahn

    IPC: H01L33/00 ,  H01L33/32 ,  H01L33/62 ,  H01S5/02

    Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.

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