Abstract:
A method for producing a plurality of optoelectronic semiconductor devices is provided. A number of semiconductor chips are fastened on an auxiliary support. The semiconductor chips are spaced apart from one another in a lateral direction. A reflective layer is formed, at least in regions between the semiconductor chips. A composite package body is formed at least in certain regions between the semiconductor chips. The auxiliary support is removed and the composite housing body is separated into a number of optoelectronic semiconductor devices. Each optoelectronic semiconductor device has at least one semiconductor chip, part of the reflective layer and part of the composite package body as a package body.
Abstract:
An electrical component includes a closed lead frame with a passage opening at least one electrical component arranged within the passage opening, the electrical component including a first contact pad on one side of the electrical component and a second contact pad on a second side of the electric component, wherein the second side faces the first side and the second contact pad is electrically coupled to the lead frame; and an encapsulation which mechanically couples the electrical component to the lead frame, wherein the lead frame includes a recess on one side, the recess extending from an edge of the lead frame to the passage opening and connecting at least one electrical connecting element from the edge of the lead frame to the component arranged in the passage opening.
Abstract:
A method for producing optoelectronic semiconductor components is disclosed. In an embodiment a method includes A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces; B) applying a clear potting permeable to the radiation directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the main light exit sides; C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces; and D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier.
Abstract:
The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.
Abstract:
A method of producing an optoelectronic lighting device includes providing a laser chip carrier on which two edge emitting laser chips, arranging a carrier including two optical elements onto the laser chip carrier, forming a respective optical connection by an optical material between a respective laser facet and a respective optical element, singulating the two laser chips by dividing the laser chip carrier between the two laser chips to form two mutually divided laser chip carrier parts, wherein the dividing includes dividing the carrier between the two optical elements to form two mutually divided carrier parts each including one of the two optical elements, such that two singulated laser chips arranged on the respective divided laser chip carrier part are formed, the respective laser facets of which are optically connected to the respective optical element of the respective carrier part by the optical material.
Abstract:
An optoelectronic component includes a housing having a top side, wherein an anchoring structure which is a positive relief is arranged at the top side, a covering element is arranged above the top side and anchored at the anchoring structure, and the covering element completely covers the top side.
Abstract:
An electrical component includes a closed lead frame with a passage opening at least one electrical component arranged within the passage opening, the electrical component including a first contact pad on one side of the electrical component and a second contact pad on a second side of the electric component, wherein the second side faces the first side and the second contact pad is electrically coupled to the lead frame; and an encapsulation which mechanically couples the electrical component to the lead frame, wherein the lead frame includes a recess on one side, the recess extending from an edge of the lead frame to the passage opening and connecting at least one electrical connecting element from the edge of the lead frame to the component arranged in the passage opening.
Abstract:
An optoelectronic component comprising a laser diode is disclosed. In an embodiment an optoelectronic component includes a carrier, a laser diode arranged on the carrier, wherein the laser diode is configured to emit electromagnetic radiation in a lateral radiation and a radiation-guiding layer arrangement located in front of the lateral face of the laser diode, wherein the layer arrangement includes at least a first layer and a second layer, wherein the first layer is arranged on the carrier, wherein the second layer is arranged on the first layer, wherein the first layer and the second layer abut each other, wherein the second layer is transparent for the electromagnetic radiation, wherein the first layer has a smaller refractive index than the second layer, and wherein the layer arrangement is arranged such that the electromagnetic radiation of the laser diode is coupled into the second layer, guided in the second layer to a radiation surface of the second layer, and emitted via the radiation surface of the second layer.
Abstract:
A method for producing optoelectronic semiconductor components is disclosed. In an embodiment a method includes A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces; B) applying a clear potting permeable to the radiation directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the main light exit sides; C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces; and D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier.
Abstract:
A light-emitting component includes a light-emitting element and a housing with a cavity. The housing includes a housing material that absorbs at least 80 percent of light in the visible range. The cavity is formed by a limiting wall, formed by a housing surface, and a plane of the element. The light-emitting element arranged within the cavity of the housing and positioned above the element plane includes an emission side located opposite to the element plane. The cavity is at least partially filled with a transparent material composed of a first material and a second material, wherein the first material at least partially covers the limiting wall, and the second material at least partially covers the emission side. A boundary surface is formed between the first material and the second material. A first refractive index of the first material is smaller than a second refractive index of the second material.