公开(公告)号：US20170347047A1

公开(公告)日：2017-11-30

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

CPC classification number: H04N5/374 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/23229 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452 ,  H04N5/37457

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US12273639B2

公开(公告)日：2025-04-08

申请号：US17893689

申请日：2022-08-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Young Woo Jung ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Zhiqiang Lin ,  Sang Joo Lee

IPC: H04N25/704 ,  H04N23/67 ,  H04N25/709 ,  H10F39/00 ,  H10F39/18

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

公开(公告)号：US12096141B2

公开(公告)日：2024-09-17

申请号：US18154715

申请日：2023-01-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yifei Du ,  Zhiqiang Lin ,  Bill Phan ,  Woon Il Choi

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/771

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/771

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

公开(公告)号：US20240304642A1

公开(公告)日：2024-09-12

申请号：US18180731

申请日：2023-03-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chao Niu ,  Yuanwei Zheng ,  Zhiqiang Lin

IPC: H01L27/146 ,  H04N25/78

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N25/78

Abstract: A pixel array includes 2×2 groupings of photodiodes to generate image charge in response to incident light directed through a back side of the semiconductor layer. A Quad Bayer filter is disposed over the back side of the semiconductor layer over the 2×2 groupings of photodiodes. Each color filter of the Quad Bayer CFA is disposed over a respective one of the plurality of 2×2 groupings of photodiodes. Trench balance structures are disposed in the semiconductor layer. Each of the trench balance structures is disposed in the semiconductor layer between one of the photodiodes and a respective one of the red color filters of the Quad Bayer filter. None of the trench balance structures are disposed between any of the photodiodes and respective green color filters or blue color filters of the Quad Bayer filter.

公开(公告)号：US20220367542A1

公开(公告)日：2022-11-17

申请号：US17322536

申请日：2021-05-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Bill Phan ,  Seong Yeol Mun ,  Yuanliang Liu ,  Alireza Bonakdar ,  Chengming Liu ,  Zhiqiang Lin

IPC: H01L27/146

Abstract: CMOS image sensor with LED flickering reduction and low color cross-talk are disclosed. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Each pixel includes a plurality of large subpixels (LPDs) and at least one small subpixel (SPD). A plurality of color filters are disposed over individual subpixels. Each individual SPD is laterally adjacent to at least one other SPD.

公开(公告)号：US20220352224A1

公开(公告)日：2022-11-03

申请号：US17244776

申请日：2021-04-29

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chengming Liu ,  Zhiqiang Lin ,  Duli Mao ,  Lingtao Jiang

IPC: H01L27/146

Abstract: CMOS image sensor with multiple sensitivities for high dynamic range imaging and LED flicker mitigation. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Each pixel includes a plurality of cells. A plurality of color filters is disposed over corresponding plurality of cells. The plurality of color filters corresponding to the plurality of cells of an individual pixel have more than one filtering strength for each color of the plurality of color filters.

公开(公告)号：US11289523B2

公开(公告)日：2022-03-29

申请号：US16563052

申请日：2019-09-06

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Alireza Bonakdar ,  Zhiqiang Lin

IPC: H01L27/00 ,  H01L27/146

Abstract: An image sensor includes a substrate material, an array of the color filters, an array of waveguides and spacers. The substrate material includes a plurality of photodiodes disposed therein. The array of color filters are disposed over the substrate material. The array of waveguides are disposed over the substrate material. The buffer layer is disposed between the substrate material and the arrays of color filters and waveguides. The spacers are disposed between the color filters in the array of color filters. The spacers are disposed between the waveguides in the array of waveguides. Incident light is adapted to be confined between the spacers. The incident light is adapted to be directed through one of the waveguides and through one of the color filters prior to being directed through the buffer layer into one of the photodiodes in the substrate material.

公开(公告)号：US08969775B2

公开(公告)日：2015-03-03

申请号：US13781388

申请日：2013-02-28

Applicant: Omnivision Technologies, Inc.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/00 ,  H04N5/335

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20140239154A1

公开(公告)日：2014-08-28

申请号：US13781388

申请日：2013-02-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20240282789A1

公开(公告)日：2024-08-22

申请号：US18171805

申请日：2023-02-21

Applicant: OmniVision Technologies, Inc.

Inventor： Xiaowei Wang ,  Yin Qian ,  Zhiqiang Lin ,  Lindsay Grant

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/1462 ,  H01L27/14627

Abstract: An image sensor comprises an image sensor chip comprising a semiconductor substrate having a top surface and a plurality of microlenses disposed on the top surface; a cover glass having a first side in contact with air and a second side opposite to the first side; and a multi-layer structure disposed between the plurality of microlenses and the cover glass, which comprises: a bottom layer directly in contact with the plurality of microlenses, where the refractive index of the bottom layer is lower than the refractive index of the plurality of microlenses, and a top layer directly in contact with the second side of the cover glass, where the top layer is an optical glue made for bonding two optical elements.