公开(公告)号：US20180240697A1

公开(公告)日：2018-08-23

申请号：US15888161

申请日：2018-02-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA ,  Takahiro MIYAI

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/78 ,  H01L21/3065 ,  H01L21/66

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32816 ,  H01J37/3299 ,  H01J2237/24585 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/67109 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/6835 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/78 ,  H01L22/20 ,  H01L2221/68327

Abstract: Provided is a plasma processing apparatus which comprises a chamber, a stage configured to set a holding sheet and a substrate held thereon, a securing mechanism configured to secure the holding sheet on the stage, a plasma generator including a first electrode and a first high-frequency power supply, and a determiner for determining a contact status between the holding sheet and the stage, wherein a gas through-hole is arranged on a surface of the stage in an annular region defined between an inner edge of a frame set on the stage and an outer edge of the substrate, and wherein the determiner is configured to determine the contact status in accordance with a pressure of a gas in the gas introduction conduit and/or a regulation data for regulating the pressure of the gas, the gas being introduced between the stage and the holding sheet from the gas through-hole.

公开(公告)号：US20160064196A1

公开(公告)日：2016-03-03

申请号：US14837400

申请日：2015-08-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA ,  Bunji MIZUNO ,  Tomohiro OKUMURA

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32366 ,  H01J37/32633 ,  H01J37/32715 ,  H01J37/32733 ,  H01L21/3065 ,  H01L21/32139 ,  H01L21/67109 ,  H01L21/67288 ,  H01L21/6831 ,  H01L21/6836 ,  H01L21/68721 ,  H01L21/68742 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68381

Abstract: A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes: a process chamber; a plasma excitation device that generates plasma; a stage in the chamber; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and has a window section through which the substrate is partly exposed to plasma; and a movement device that moves a relative position of the cover to the frame. The cover has a roof section, a cylindrical circumferential side section extending from a circumferential edge of the roof section toward the stage, and a correction member that protrudes from the roof section and/or the circumferential side section toward the frame and presses the frame onto the stage to correct warpage of the frame.

Abstract translation: 一种等离子体处理装置，其在保持在包括环形框架和保持片材的运送载体上的基板上进行等离子体处理。 该装置包括：处理室; 产生等离子体的等离子体激发装置; 在房间的一个阶段; 用于冷却载物台的冷却机构; 部分地覆盖保持片和框架并具有窗口部分的盖子，衬底部分暴露于等离子体; 以及将盖的相对位置移动到框架的移动装置。 所述盖具有屋顶部，从所述屋顶部的周缘向所述台延伸的圆筒状周向侧部，以及从所述屋顶部和/或所述周向侧部朝向所述框架突出并将所述框架按压到所述台架上的校正部件 校正框架翘曲的阶段。

公开(公告)号：US20240266201A1

公开(公告)日：2024-08-08

申请号：US18432232

申请日：2024-02-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshiyuki TAKASAKI ,  Shogo OKITA ,  Minghui ZHAO

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32715 ,  H01J37/3299 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/332 ,  H01J2237/334

Abstract: A plasma processing apparatus includes an ESC system having an ESC electrode, a plasma generator generating a first and a second plasma, a controller controlling the ESC system and the plasma generator such that a first or second processing with the first or second processing is performed on a substrate chucked to a stage, and an abnormality detector detecting abnormality, based on a plurality of parameters. The abnormality detector performs an abnormality detection during predetermined period DT immediately after switching between the first processing and the second processing, based on a first parameter including a monitoring information related to voltage V and/or current I applied to the ESC electrode and does not include a monitoring information related to pressure PR within a chamber, and performs an abnormality detection during other than predetermined period DT, based on a second parameter including the monitoring information related to pressure PR within the chamber.

公开(公告)号：US20230102635A1

公开(公告)日：2023-03-30

申请号：US17905100

申请日：2020-12-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA ,  Akihiro ITOU ,  Atsushi HARIKAI

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3065

Abstract: An electronic component cleaning method including: a preparation step of preparing an electronic component having a first surface covered with a protective film, a second surface opposite to the first surface, a sidewall between the first and second surfaces, and an adhering matter adhering to the sidewall; and a sidewall cleaning step of cleaning the sidewall. The sidewall cleaning step includes a deposition step of depositing a first film on the protective film and a surface of the adhering matter, using a first plasma, and a removal step of removing the first film deposited on the surface of the adhering matter, together with at least part of the adhering matter, using a second plasma. In the sidewall cleaning step, the deposition step and the removal step are alternately repeated a plurality of times, so as to allow the protective film to continue to exist.

公开(公告)号：US20220199411A1

公开(公告)日：2022-06-23

申请号：US17550309

申请日：2021-12-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshiyuki TAKASAKI ,  Ryota FURUKAWA ,  Atsushi HARIKAI ,  Shogo OKITA

IPC: H01L21/3065 ,  H01L21/78 ,  H01L21/311

Abstract: Disclosed is a method for producing element chips. The method includes: a preparing step of preparing a substrate 10 that is held on a holding sheet 22 that is supported by a frame 21, the substrate including element regions and dicing regions; a protective film forming step of forming a protective film 15 so as to cover the frame 21, the holding sheet 22, and the substrate 10; a patterning step of removing a part of the protective film 15 so as to expose the dicing regions of the substrate 10; a plasma dicing step including a process that uses a plasma that contains fluorine, the plasma dicing step being a step of individualizing the substrate 10 into a plurality of element chips; and a fluorine removing step of removing, together with the protective film 15, fluorine attached to the protective film 15 in the plasma dicing step.

公开(公告)号：US20210407855A1

公开(公告)日：2021-12-30

申请号：US17471661

申请日：2021-09-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hidefumi SAEKI ,  Atsushi HARIKAI ,  Shogo OKITA

IPC: H01L21/78 ,  H01L23/544 ,  H01L21/268 ,  B23K26/00 ,  B23K26/364 ,  H01L21/3065

Abstract: A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.

公开(公告)号：US20210202207A1

公开(公告)日：2021-07-01

申请号：US17114679

申请日：2020-12-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Atsushi HARIKAI ,  Shogo OKITA

IPC: H01J37/32 ,  H01J37/18 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/02

Abstract: A plasma processing method, including: a trenched substrate preparation process of preparing a trenched substrate having trenches having a bottom exposing an oxide film; and an oxide film removal process of exposing the trenched substrate to a plasma, to remove the oxide film. The oxide film removal process includes a plurality of cycles, each cycle including: an oxide film etching step of etching the oxide film; and a cleaning step of removing an attached matter on inner walls of the trenches, after the oxide film etching step.

公开(公告)号：US20200294791A1

公开(公告)日：2020-09-17

申请号：US16809755

申请日：2020-03-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA ,  Atsushi HARIKAI ,  Akihiro ITOU

IPC: H01L21/02 ,  H01L21/463 ,  H01L21/78

Abstract: An element chip manufacturing method including: a preparing step of preparing a substrate including a plurality of element regions and a dicing region defining the element regions, the substrate having a first surface and a second surface opposite the first surface; a laser scribing step of applying a laser beam to the dicing region from a side of the first surface, to form a groove corresponding to the dicing region and being shallower than a thickness of the substrate; a cleaning step of exposing the first surface of the substrate to a first plasma, to remove debris on the groove; and a dicing step of exposing the substrate at a bottom of the groove to a second plasma after the cleaning step, to dice the substrate into element chips including the element regions. The first plasma is generated from a process gas containing a carbon oxide gas.

公开(公告)号：US20180019099A1

公开(公告)日：2018-01-18

申请号：US15714231

申请日：2017-09-25

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tetsuhiro IWAI ,  Shogo OKITA

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32119

Abstract: A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which includes a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. The dielectric member has a groove formed in the first surface of the dielectric member, and at least a part of the coil is disposed in the groove.

公开(公告)号：US20160293381A1

公开(公告)日：2016-10-06

申请号：US15000374

申请日：2016-01-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA ,  Atsushi HARIKAI ,  Noriyuki MATSUBARA

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/334 ,  H01L21/6833 ,  H01L21/68742

Abstract: A plasma processing apparatus includes: a reaction chamber; a stage which is disposed inside the reaction chamber and on which a conveyance carrier is mountable; an electrostatic chuck mechanism including an electrode portion that is disposed inside the stage; a support portion which supports the conveyance carrier between a stage-mounted position on the stage and a transfer position that is distant from the stage upward; and an elevation mechanism which elevates and lowers the support portion relative to the stage. In a case in which the conveyance carrier is mounted on the stage by lowering the support portion, the electrostatic chuck mechanism starts applying a voltage to the electrode portion before contact of an outer circumferential portion of a holding sheet which holds the conveyance carrier to the stage.

Abstract translation: 一种等离子体处理装置，包括：反应室; 设置在反应室内的台架，输送载体可安装在该台上; 静电吸盘机构，其包括设置在所述台内部的电极部; 支撑部分，其在台架上的台安装位置和远离台架的传送位置之间支撑传送载体; 以及升降机构，其使支撑部相对于台升高并降低。 在通过降低支撑部分而将输送载体安装在载物架上的情况下，静电卡盘机构在将保持输送载体的保持片材的外周部分接触到台阶之前开始向电极部分施加电压 。