利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.036 秒)

    Confinement of E-fields in high density ferroelectric memory device structures
    15.
    发明授权
    Confinement of E-fields in high density ferroelectric memory device structures 失效
    限制高密度铁电存储器件结构中的电场

    公开(公告)号：US06511856B2

    公开(公告)日：2003-01-28

    申请号：US09893155

    申请日：2001-06-27

    申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    IPC分类号： H01L2100

    CPC分类号： H01L28/75 ,  H01L21/28518 ,  H01L21/28568 ,  H01L28/55

    摘要： A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element. Such E-fields confinement may be effected by fabrication of the device structure including: (a) patterning the stack capacitor, and depositing a non-ferroelectric, high &egr; material layer over and on the sides of the stack capacitor; (b) forming the stack capacitor without patterning the ferroelectric material and rendering a portion of the material non-ferroelectric in character; or (c) forming the ferroelectric stack capacitor with an aspect ratio, of effective lateral dimension d of the ferroelectric capacitor material element to thickness t of the ferroelectric capacitor material element, that is greater than 5, with d and t being measured in same dimensional units.

    摘要翻译： 一种强电介质电容器器件结构，包括铁电堆叠电容器，该铁电体堆叠电容器包括位于绝缘体层下方的包含埋入晶体管电路的衬底上的铁电材料电容器元件，所述绝缘体层具有其中包含导体插塞到晶体管电路的通孔，其中电场被结构地局限于 铁电电容材料元件。 这样的电场限制可以通过制造器件结构来实现，该器件结构包括：（a）图案化叠层电容器，以及在堆叠电容器的两侧和之上沉积非铁电的高ε材料层; （b）形成堆叠电容器，而不对铁电材料进行构图，并使材料的一部分非铁电性能; 或（c）形成强电介质电容器材料元素的有效横向尺寸d与铁电电容器材料元件的厚度t的长宽比大于5的铁电堆叠电容器，其中d和t以相同的尺寸被测量 单位。

    Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
    16.
    发明授权
    Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer 失效
    液体输送系统，用于液体输送系统的加热器装置和蒸发器

    公开(公告)号：US5882416A

    公开(公告)日：1999-03-16

    申请号：US878616

    申请日：1997-06-19

    申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Ralph J. Carl, Jr.

    发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Ralph J. Carl, Jr.

    IPC分类号： C23C16/448 ,  H01L21/31 ,  C23C16/00 ,  H05B3/00 ,  H05B3/40

    CPC分类号： C23C16/448

    摘要： A liquid delivery system for delivery of an initially liquid reagent in vaporized form to a chemical vapor deposition reactor arranged in vapor-receiving relationship to the liquid delivery system. The liquid delivery system includes: (a) an elongate vaporization fluid flow passage defining a longitudinal axis and bounded by an enclosing wall to define a cross-section of the fluid flow passage transverse to the longitudinal axis; (b) a vaporization element contained within the fluid flow passage transverse to the longitudinal axis; a source reagent liquid feed passage having a terminus arranged to discharge liquid in a direction perpendicular to a facing surface of the vaporization element; (d) a heating means for heating the vaporization element to a temperature for vaporization of the liquid reagent; and (e) a manifold for flowing vapor formed by vaporization of the liquid reagent on the vaporization element from the fluid flow passage to the chemical vapor deposition reactor, in which the manifold including a diverting means to prevent non-volatile residue from flowing to the chemical vapor deposition reactor. A heater assembly may be employed for heating a component of the liquid delivery system, and the system may utilize a replaceable vaporizer cap removably engageable with the vaporization chamber.

    摘要翻译： 一种液体输送系统，用于将蒸发的初始液体试剂输送到与液体输送系统成蒸汽接收关系的化学气相沉积反应器。 液体输送系统包括：（a）细长的蒸发流体流动通道，其限定纵向轴线并由封闭壁限定，以限定横向于纵向轴线的流体流动通道的横截面; （b）流体流动通道内包含的横向于纵向轴线的蒸发元件; 源试剂液体供给通道，其具有设置成沿垂直于汽化元件的相对表面的方向排出液体的末端; （d）加热装置，用于将蒸发元件加热到液体试剂的蒸发温度; 和（e）用于流动由蒸发元件上的液体试剂从流体流动通道蒸发到化学气相沉积反应器而形成的蒸汽的歧管，其中歧管包括转移装置，以防止非挥发性残余物流向 化学气相沉积反应器。 可以使用加热器组件来加热液体输送系统的部件，并且系统可以使用可移除地与蒸发室接合的可更换的蒸发器盖。

    Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
    17.
    发明授权
    Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer 失效
    用于形成多组分氧化物层的数字化学气相沉积（CVD）方法

    公开(公告)号：US5972430A

    公开(公告)日：1999-10-26

    申请号：US979465

    申请日：1997-11-26

    申请人： Frank DiMeo, Jr. ,  Steven M. Bilodeau ,  Peter C. Van Buskirk

    发明人： Frank DiMeo, Jr. ,  Steven M. Bilodeau ,  Peter C. Van Buskirk

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455

    CPC分类号： C23C16/409 ,  C23C16/45531

    摘要： A chemical vapor deposition (CVD) method for forming a multi-component oxide layer. There is first provided a chemical vapor deposition (CVD) reactor chamber. There is then positioned within the chemical vapor deposition (CVD) reactor chamber a substrate. There is then formed over the substrate a multi-component oxide precursor layer. The multi-component oxide precursor layer is formed from at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material. There is then oxidized with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form a multi-component oxide layer formed over the substrate. The oxidant reactant source material is introduced into the chemical vapor deposition (CVD) reactor chamber in absence of the first precursor reactant source material and the second precursor reactant source material.

    摘要翻译： 一种用于形成多组分氧化物层的化学气相沉积（CVD）方法。 首先提供化学气相沉积（CVD）反应室。 然后在化学气相沉积（CVD）反应器室内定位一个衬底。 然后在衬底上形成多组分氧化物前体层。 多组分氧化物前体层由不存在氧化剂反应物源材料的至少第一前体反应物源材料和同时引入化学气相沉积（CVD）反应器室的第二前体反应物源材料形成。 然后在化学气相沉积（CVD）反应器室内用氧化剂反应物源材料氧化形成在衬底上的多组分氧化物前体层，以形成在衬底上形成的多组分氧化物层。 在不存在第一前体反应物源材料和第二前体反应物源材料的情况下，氧化剂反应物源材料被引入到化学气相沉积（CVD）反应器室中。

    Confinement of E-fields in high density ferroelectric memory device structures
    18.
    发明授权
    Confinement of E-fields in high density ferroelectric memory device structures 失效
    限制高密度铁电存储器件结构中的电场

    公开(公告)号：US06342711B1

    公开(公告)日：2002-01-29

    申请号：US09264047

    申请日：1999-03-08

    申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    IPC分类号： H01L2976

    CPC分类号： H01L28/75 ,  H01L21/28518 ,  H01L21/28568 ,  H01L28/55

    摘要： A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element. Such E-fields confinement may be effected by fabrication of the device structure including: (a) patterning the stack capacitor, and depositing a non-ferroelectric, high ∈ material layer over and on the sides of the stack capacitor; (b) forming the stack capacitor without patterning the ferroelectric material and rendering a portion of the material non-ferroelectric in character; or (c) forming the ferroelectric stack capacitor with an aspect ratio, of effective lateral dimension d of the ferroelectric capacitor material element to thickness t of the ferroelectric capacitor material element, that is greater than 5, with d and t being measured in same dimensional units.

    摘要翻译： 一种强电介质电容器器件结构，包括铁电堆叠电容器，该铁电体堆叠电容器包括位于绝缘体层下方的包含埋入晶体管电路的衬底上的铁电材料电容器元件，所述绝缘体层具有其中包含导体插塞到晶体管电路的通孔，其中电场被结构地局限于 铁电电容材料元件。 这样的电场限制可以通过制造器件结构来实现，该器件结构包括：（a）图案化叠层电容器，并且在堆叠电容器的侧面上和之上沉积非铁电的高ε材料层; （b）形成堆叠电容器，而不对铁电材料进行构图，并使材料的一部分非铁电性能; 或（c）形成强电介质电容器材料元素的有效横向尺寸d与铁电电容器材料元件的厚度t的长宽比大于5的铁电堆叠电容器，其中d和t以相同的尺寸被测量 单位。

    Precursors for silicon dioxide gap fill
    19.
    发明授权
    Precursors for silicon dioxide gap fill 有权
    二氧化硅填充前体

    公开(公告)号：US09337054B2

    公开(公告)日：2016-05-10

    申请号：US12665929

    申请日：2008-06-27

    申请人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    发明人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    IPC分类号： H01L21/316 ,  H01L21/02

    CPC分类号： H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

    摘要： A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    摘要翻译： 描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。 还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。 前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。

    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes
    20.
    发明申请
    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes 审中-公开
    用于确定腔室清洁过程端点的系统和方法

    公开(公告)号：US20080251104A1

    公开(公告)日：2008-10-16

    申请号：US12088825

    申请日：2006-10-03

    申请人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    发明人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    IPC分类号： B08B13/00

    CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

    摘要： Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

    摘要翻译： 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括将清洁流体与要清洁的结构接触并产生具有对应于结构的清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。