公开(公告)号：US08933532B2

公开(公告)日：2015-01-13

申请号：US13270641

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/872 ,  H01L29/808 ,  H01L29/66 ,  H01L29/20 ,  H01L29/868 ,  H01L29/40 ,  H01L29/06

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.

公开(公告)号：US08927999B2

公开(公告)日：2015-01-06

申请号：US13301165

申请日：2011-11-21

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/265 ,  H01L29/66 ,  H01L29/808 ,  H01L29/868 ,  H01L29/872 ,  H01L29/06

CPC分类号： H01L21/2654 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/6631 ,  H01L29/66446 ,  H01L29/66856 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： An edge terminated semiconductor device is described including a GaN substrate; a doped GaN epitaxial layer grown on the GaN substrate including an ion-implanted insulation region, wherein the ion-implanted region has a resistivity that is at least 90% of maximum resistivity and a conductive layer, such as a Schottky metal layer, disposed over the GaN epitaxial layer, wherein the conductive layer overlaps a portion of the ion-implanted region. A Schottky diode is prepared using the Schottky contact structure.

摘要翻译： 描述了边缘端接的半导体器件，其包括GaN衬底; 在包括离子注入绝缘区域的GaN衬底上生长的掺杂GaN外延层，其中所述离子注入区域具有至少为最大电阻率的90％的电阻率和诸如肖特金属层的导电层设置在 所述GaN外延层，其中所述导电层与所述离子注入区域的一部分重叠。 使用肖特基接触结构制备肖特基二极管。

公开(公告)号：US08895845B2

公开(公告)日：2014-11-25

申请号：US12940861

申请日：2010-11-05

申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC分类号： H01L31/00 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/0735

CPC分类号： H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或 使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。 可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

公开(公告)号：US08698164B2

公开(公告)日：2014-04-15

申请号：US13315720

申请日：2011-12-09

申请人： Donald R. Disney ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown

发明人： Donald R. Disney ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown

IPC分类号： H01L29/808 ,  H01L21/335

CPC分类号： H01L29/8083 ,  H01L29/0623 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66446 ,  H01L29/66462 ,  H01L29/66909 ,  H01L29/66924

摘要： A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure.

摘要翻译： 半导体结构包括具有第一表面和第二表面的GaN衬底。 GaN衬底的特征在于第一导电类型和第一掺杂剂浓度。 第一电极电耦合到GaN衬底的第二表面。 半导体结构还包括耦合到GaN衬底的第一表面的第一导电类型的第一GaN外延层和耦合到第一GaN外延层的第二导电类型的第二GaN层。 第一GaN外延层包括沟道区。 第二GaN外延层包括栅极区域和边缘端接结构。 耦合到栅极区域的第二电极和耦合到沟道区域的第三电极都设置在边缘端接结构内。

公开(公告)号：US08686284B2

公开(公告)日：2014-04-01

申请号：US12605140

申请日：2009-10-23

申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC分类号： H01L31/00

CPC分类号： H01L31/0735 ,  H01L31/02168 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）装置可以包括前侧和/或后侧光捕获技术，以尽量吸收在吸收层中尽可能多地入射到PV装置的前侧的光子。 光捕获技术可以包括前侧防反射涂层，多个窗口层，在前侧和/或后侧上的粗糙化或纹理化，用于散射光的后侧扩散器和/或用于将光重定向到的后侧反射器 PV设备的内部。 通过这种光捕获技术，对于给定量的入射光，更多的光可以被吸收层吸收，从而提高PV器件的效率。

公开(公告)号：US08569153B2

公开(公告)日：2013-10-29

申请号：US13307108

申请日：2011-11-30

申请人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

发明人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

IPC分类号： H01L21/20 ,  H01L21/337

CPC分类号： H01L21/02636 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66212 ,  H01L29/66446

摘要： A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer.

摘要翻译： 生长n型III族氮化物基外延层的方法包括在外延生长反应器中提供衬底，形成耦合到衬底表面的一部分的掩模材料，并将第一气体流入外延生长反应器 。 第一种气体包括III族元素和碳。 该方法还包括使第二气体流入外延生长反应器。 第二气体包括V族元素，V族元素与III族元素的摩尔比为至少5,000。 该方法还包括生长n型III族氮化物基外延层。

公开(公告)号：US08502234B2

公开(公告)日：2013-08-06

申请号：US13289219

申请日：2011-11-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L31/0256 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66909 ,  H01L21/823487 ,  H01L27/0605 ,  H01L27/0611 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/098 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/8083 ,  H01L29/872

摘要： An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.

公开(公告)号：US20130143392A1

公开(公告)日：2013-06-06

申请号：US13312055

申请日：2011-12-06

申请人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L21/20

CPC分类号： H01L29/475 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/868 ,  H01L29/872

摘要： A method of fabricating a diode in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface and forming a n-type GaN drift layer coupled to the first surface of the n-type GaN substrate. The method also includes forming an in-situ SixNy layer coupled to the n-type GaN drift layer opposite the n-type GaN substrate and at least partially removing portions of the SixNy layer and the n-type GaN drift layer to form a plurality of void regions and a remaining portion of the SixNy layer. The method further includes selectively regrowing a p-type epitaxial layer in the void regions.

摘要翻译： 制造氮化镓（GaN）材料中的二极管的方法包括提供具有第一表面和第二表面的n型GaN衬底，并形成耦合到n型GaN衬底的第一表面的n型GaN漂移层 。 该方法还包括形成与n型GaN衬底相对的n型GaN漂移层耦合的原位SixNy层，并且至少部分去除SixNy层和n型GaN漂移层的部分以形成多个 空隙区域和SixNy层的剩余部分。 该方法还包括在空隙区域中选择性地重新生长p型外延层。

公开(公告)号：US20130032813A1

公开(公告)日：2013-02-07

申请号：US13198661

申请日：2011-08-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/66909 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66893 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/872

摘要： A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C.

摘要翻译： 生长III族氮化物基外延结构的方法包括在外延生长反应器中提供衬底并将衬底加热至预定温度。 该方法还包括将含镓气体流入外延生长反应器并将含氮气体流入外延生长反应器中。 该方法还包括将吸气气体流入外延生长反应器。 预定温度大于1000℃

公开(公告)号：US20120309172A1

公开(公告)日：2012-12-06

申请号：US13118900

申请日：2011-05-31

申请人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

发明人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

IPC分类号： H01L21/20

CPC分类号： H01L21/2654 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/0079

摘要： A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer.

摘要翻译： 根据本发明的实施例的重新使用III族氮化物生长衬底的方法包括在III族氮化物衬底上外延生长III族氮化物半导体结构。 III族氮化物半导体结构包括在牺牲层上生长的牺牲层和附加层。 牺牲层植入至少一种植入物种。 在注入的牺牲层处将III族氮化物衬底与附加层分离。 在一些实施例中，III族氮化物衬底是GaN，牺牲层是GaN，含铝的III族氮化物层或含铟的III族氮化物层。 在一些实施例中，通过蚀刻注入的牺牲层将III族氮化物衬底与附加层分离。