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170 条记录 (耗时 0.046 秒)

    Methods for forming group III-arsenide-nitride semiconductor materials
    11.
    发明授权
    Methods for forming group III-arsenide-nitride semiconductor materials 失效
    形成III族砷化物 - 氮化物半导体材料的方法

    公开(公告)号：US06342405B1

    公开(公告)日：2002-01-29

    申请号：US09576746

    申请日：2000-05-23

    申请人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    发明人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L2100

    CPC分类号： H01S5/3235 ,  C23C16/303 ,  C30B25/02 ,  C30B29/40 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323 ,  H01S5/32341 ,  H01S5/32366 ,  H01S5/32375

    摘要： Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

    摘要翻译： 公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V晶体中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光的材料，以及中红外和近紫外线发射器。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。

    Talbot cavity diode laser with uniform single-mode output
    17.
    发明授权
    Talbot cavity diode laser with uniform single-mode output 失效
    Talbot腔二极管激光器具有均匀的单模输出

    公开(公告)号：US4972427A

    公开(公告)日：1990-11-20

    申请号：US407206

    申请日：1989-09-14

    申请人： William Streifer ,  Robert G. Waarts ,  David F. Welch ,  Donald R. Scifres

    发明人： William Streifer ,  Robert G. Waarts ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： G02B6/28 ,  H01S5/14 ,  H01S5/40

    CPC分类号： H01S5/148 ,  H01S5/4062 ,  G02B6/2813

    摘要： A diode laser of the type having an array of laser emitters in a Talbot cavity in which edge reflectors are added to enhance feedback to edgemost emitters. In one embodiment, a transparent slab with reflectively coated sides is present between the phase plane of the emitted light and the Talbot cavity reflector. The phase plne is defined by a lenticular array placed a focal length in front of the laser emitters. In another embodiment, the Talbot cavity reflector has an increased reflectivity toward its edges. In all embodiments the Talbot cavity reflector is preferably spaced a distance na.sup.2 /.lambda. from the phase plane, where n is a positive integer, a is separation between adjacent emitters and .lambda. is the wavelength of emitted light. An integrated embodiment has the array and cavity reflectors defined ina single semiconductor body divided into active and ransparent region. Side mirrors are etched into the semiconductor body. The laser array may also be extended to two dimensions with individual lasers or laser bars fiber coupled to a lens surface, with an edge reflector and Talbot cavity reflector coated on an otherwise transparent slab.

    摘要翻译： 在Talbot腔中具有激光发射器阵列的类型的二极管激光器，其中添加边缘反射器以增强对edgemost发射体的反馈。 在一个实施例中，在发射光的相平面和Talbot腔反射器之间存在具有反射涂覆侧面的透明板。 相位斑点由在激光发射器前面放置焦距的透镜阵列限定。 在另一个实施例中，Talbot腔反射器对其边缘具有增加的反射率。 在所有实施例中，Talbot空腔反射器优选与相平面间隔距离为na2 /λ，其中n为正整数，a为相邻发射体之间的间隔，λ为发射光的波长。 集成实施例具有被划分为活性和透明区域的单个半导体主体中限定的阵列和空腔反射器。 侧镜被蚀刻到半导体本体中。 激光器阵列也可以扩展到二维，其中单独的激光器或激光棒纤维耦合到透镜表面，边缘反射器和Talbot腔体反射器涂覆在另外透明的平板上。

    Methods for forming group III-V arsenide-nitride semiconductor materials
    18.
    发明授权
    Methods for forming group III-V arsenide-nitride semiconductor materials 失效
    形成III-V族氮化镓半导体材料的方法

    公开(公告)号：US6130147A

    公开(公告)日：2000-10-10

    申请号：US820727

    申请日：1997-03-18

    申请人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    发明人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L33/32 ,  H01S5/323 ,  H01L21/28

    CPC分类号： H01S5/3235 ,  H01L33/32 ,  H01S5/32 ,  H01S5/32341 ,  H01S5/32366 ,  H01S5/32375

    摘要： Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

    摘要翻译： 公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V晶体中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光的材料，以及中红外和近紫外线发射器。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。

    Passivation and protection of a semiconductor surface
    20.
    发明授权
    Passivation and protection of a semiconductor surface 失效
    半导体表面的钝化和保护

    公开(公告)号：US5799028A

    公开(公告)日：1998-08-25

    申请号：US683495

    申请日：1996-07-18

    申请人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    发明人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L33/44 ,  H01S5/028 ,  H01S3/19

    CPC分类号： H01L33/44 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282

    摘要： A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

    摘要翻译： 化合物III-V半导体器件的表面分别被钝化和保护，通过用表面上的含硫或含硒钝化膜处理，然后沉积GaN，GaP，InGaP，GaAsP，ZnS或ZnSe 保护层。 在钝化和沉积保护层之前，预先形成的接触金属化可以用剥离膜或层保护。 使用低温MOCVD工艺沉积保护层，以保持先前沉积的接触金属化的完整性。 保护层的MOCVD沉积的优选范围在约300℃至约450℃的范围内。该处理温度范围在存在稳定的接触金属化的温度范围内。