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11.发明授权Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition 失效通过低温等离子体增强化学气相沉积制造薄膜的装置公开(公告)号：US06220202B1
公开(公告)日：2001-04-24
申请号：US09113252
申请日：1998-07-10
IPC分类号： C23C1600
CPC分类号： C23C16/45504 , C23C16/04 , C23C16/045 , C23C16/14 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/455 , C23C16/45565 , C23C16/4584 , C23C16/5096 , H01L21/28556
摘要： A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.
摘要翻译： 一种用于在基本上低于常规热CVD温度的温度下通过等离子体增强化学气相沉积在衬底上沉积膜的方法和装置包括将衬底放置在反应室内并激发衬底上游的第一气体以产生 第一气。 衬底在沉积室内旋转以产生泵送作用，其将第一气体自由基的气体混合物吸引到衬底表面。 第二气体靠近衬底供应以与第一气体的活化自由基混合，并且混合物在衬底处产生表面反应以沉积膜。 泵送动作将层叠流体中的气体混合物下拉到衬底表面以减少再循环和自由基复合，使得在衬底表面上可以获得足够量的自由基来参与表面反应。 另一种方法利用用RF能量偏置的气体分散喷头，以形成在靠近基板表面的浓缩等离子体中产生活化的自由基和离子的电极。 在本发明中使用的激活的等离子体气体自由基和离子向表面反应贡献能量，使得膜可以以传统热CVD技术所需的基本上较低的沉积温度沉积。 此外，这些物质的活化降低了完成表面反应所需的温度。 该方法特别适用于在低温下沉积含钛膜。
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12.发明授权Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor 失效使用旋转基座反应器通过低温等离子体增强化学气相沉积生产含钛薄膜的方法
公开(公告)号：US5665640A
公开(公告)日：1997-09-09
申请号：US253393
申请日：1994-06-03
IPC分类号： C23C16/50 , C23C16/00 , C23C16/04 , C23C16/14 , C23C16/30 , C23C16/34 , C23C16/42 , C23C16/44 , C23C16/452 , C23C16/455 , C23C16/458 , C23C16/509 , C23C16/56 , H01L21/205 , H01L21/28 , H01L21/285 , H01L51/30
CPC分类号： C23C16/45504 , C23C16/04 , C23C16/045 , C23C16/14 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/455 , C23C16/45565 , C23C16/4584 , C23C16/5096 , H01L21/28556
摘要： A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.
摘要翻译： 一种用于在基本上低于常规热CVD温度的温度下通过等离子体增强化学气相沉积在衬底上沉积膜的方法和装置包括将衬底放置在反应室内并激发衬底上游的第一气体以产生 第一气。 衬底在沉积室内旋转以产生泵送作用，其将第一气体自由基的气体混合物吸引到衬底表面。 第二气体靠近衬底供应以与第一气体的活化自由基混合，并且混合物在衬底处产生表面反应以沉积膜。 泵送动作将层叠流体中的气体混合物下拉到衬底表面以减少再循环和自由基复合，使得在衬底表面上可以获得足够量的自由基来参与表面反应。 另一种方法利用用RF能量偏置的气体分散喷头，以形成在靠近基板表面的浓缩等离子体中产生活化的自由基和离子的电极。 在本发明中使用的激活的等离子体气体自由基和离子向表面反应贡献能量，使得膜可以以传统热CVD技术所需的基本上较低的沉积温度沉积。 此外，这些物质的活化降低了完成表面反应所需的温度。 该方法特别适用于在低温下沉积含钛膜。
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13.发明授权Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus 失效用于半导体晶片处理设备的耐热循环密封和密封方法
公开(公告)号：US5575856A
公开(公告)日：1996-11-19
申请号：US241192
申请日：1994-05-11
CPC分类号： B01J3/03 , C23C16/4584 , C23C16/54 , F16J15/0881 , Y10T29/41
摘要： A semi conductor wafer processing apparatus has a wafer supporting susceptor having a sealing surface, a susceptor drive shaft for connection to the susceptor also having a sealing surface, a seal disposed between the susceptor and drive shaft sealing surfaces having a rigid metallic core and a ductile metallic coating on the core, and fasteners connecting the susceptor to the drive shaft and compressing the seal between the susceptor and drive shaft sealing surfaces. The seal retains sealing capability upon being subjected to changes in temperature.
摘要翻译： 半导体晶片处理装置具有具有密封面的晶片支撑基座，用于连接到基座的基座驱动轴也具有密封面，密封件设置在基座和驱动轴密封面之间，密封面具有刚性金属芯和延性 将芯片上的金属涂层以及将基座连接到驱动轴并且压缩基座和驱动轴密封表面之间的密封件的紧固件。 密封件经受温度变化时保持密封性能。
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14.发明授权Method for chemical vapor deposition of titanium nitride films at low temperatures 失效氮化钛薄膜在低温下化学气相沉积的方法
公开(公告)号：US5378501A
公开(公告)日：1995-01-03
申请号：US131900
申请日：1993-10-05
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/28 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/34 , C23C16/45508 , C23C16/4584
摘要： Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550.degree. C. This is accomplished by minimizing the boundary layer thickness over the substrate.
摘要翻译： 通过在低于550℃的温度下化学气相沉积四氯化钛，氨和稀释剂将氮化钛薄膜沉积在半导体衬底上。通过使衬底上的边界层厚度最小化来实现。
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15.发明授权Method and apparatus for low temperature deposition of CVD and PECVD films 失效用于CVD和PECVD膜的低温沉积的方法和装置
公开(公告)号：US06140215A
公开(公告)日：2000-10-31
申请号：US615453
申请日：1996-03-14
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/50 , C23C16/509 , H01L21/205 , H01L21/285 , H01L21/20
CPC分类号： C23C16/45565 , C23C16/4417 , C23C16/45504 , C23C16/4558 , C23C16/4584 , C23C16/509 , C23C16/5096 , Y10S438/935
摘要： Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder. The very small showerhead-to-substrate spacing and the efficient delivery of the plasma and reacting gases produces low temperature CVD and PECVD of films on the substrate.
摘要翻译： 公开了利用在旋转衬底的1英寸内的气体分散喷头位置的CVD和PECVD膜的低温沉积的方法和装置。 喷头位于气体分配装置下方适当的距离处，例如在环和喷头之间产生稳定的气流。 圆柱形结构在气体分散环和喷头之间延伸，以将气体容纳在喷头上，在衬底上产生小的边界层，以确保膜在衬底表面上的有效均匀沉积。 在本发明的一个实施例中，喷头是具有RF能量的偏压，使得其用作电极以煽动等离子体与衬底接近PECVD。 气缸与喷头隔开，例如通过石英绝缘环，以防止气缸内的等离子体点燃，或者，气缸由石英材料制成。 射频淋浴头采用小型气体分散孔，以进一步防止气缸内的等离子体点火。 非常小的喷头间距和等离子体和反应气体的有效输送在基板上产生薄膜的低温CVD和PECVD。
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公开(公告)号：US5972790A
公开(公告)日：1999-10-26
申请号：US489040
申请日：1995-06-09
IPC分类号： H01L29/78 , C23C16/42 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/4763
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： Titanium is deposited onto a semiconductor interconnect to form a salicide structure by plasma-enhanced chemical vapor deposition. The reactant gases, including titanium tetrachloride, hydrogen and optionally argon, are combined. A plasma is created using RF energy and the plasma contacts the rotating semiconductor material. This causes titanium to be deposited which reacts with exposed silicon to form titanium silicide without any subsequent anneal. Other titanium deposited on the surface, as well as titanium-rich silicon compositions (TiSi.sub.X wherein X is
摘要翻译： 通过等离子体增强化学气相沉积将钛沉积在半导体互连件上以形成硅化物结构。 包括四氯化钛，氢气和任选的氩气的反应气体组合。 使用RF能量产生等离子体，并且等离子体接触旋转的半导体材料。 这导致沉积钛，其与暴露的硅反应形成硅化钛，而没有任何随后的退火。 通过化学蚀刻除去沉积在表面上的其他钛，以及富含钛的硅组合物（TiSiX，其中X为<2）。 如果只沉积约40纳米的钛，则它将选择性地沉积到硅结构上而不涂覆互连的氧化物间隔物。 在该实施例中，消除了对基板进行化学蚀刻的需要。
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17.发明授权
公开(公告)号：US5610106A
公开(公告)日：1997-03-11
申请号：US401859
申请日：1995-03-10
IPC分类号： C23C16/34 , H01L21/768 , H01L21/465 , H01L21/441
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/76838
摘要： A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400.degree. C. to about 500.degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.
摘要翻译： 在半导体基板上形成氮化钛膜的方法包括形成反应气体混合物的等离子体。 反应气体混合物包括四氯化钛，氨和氮气。 氮与氨的比例确定为约10:1至约10,000:1，并确定了四氯化钛的分压以确保形成氮化钛。 将等离子体与加热至400℃至约500℃的衬底接触。这提供了在不会干扰具有先前沉积的铝构件的集成电路的温度下具有优异共形性的高纯度氮化钛膜。
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公开(公告)号：US5593511A
公开(公告)日：1997-01-14
申请号：US567830
申请日：1995-12-06
IPC分类号： C23C8/36 , C23C14/06 , C23C14/14 , C23C14/22 , C23C14/58 , H01L21/321 , H01L21/768 , C23C8/20
CPC分类号： C23C14/0641 , C23C14/14 , C23C14/22 , C23C14/58 , C23C14/5826 , C23C14/586 , C23C8/36 , H01L21/321 , H01L21/76843 , H01L21/76856 , Y10S257/915
摘要： Titanium films are nitrided at temperatures less than 650.degree. C., and preferably between 400.degree. C. and 500.degree. C., by treating the titanium film with a plasma formed from a nitriding gas at elevated temperatures. The plasma is created by subjecting the nitriding gas to RF energy, preferably an electrode having a frequency of 13.56 MHz or less. The reaction temperature can be reduced by lowering the plasma frequency to less than 500 KHz. This provides for nitridization at temperatures of 480.degree. C. and lower.
摘要翻译： 通过在高温下用氮化气体形成的等离子体处理钛膜，在低于650℃的温度下，优选在400℃和500℃之间氮化钛膜。 等离子体是通过使氮化气体进行RF能量，优选地具有13.56MHz或更小的频率的电极而产生的。 通过将等离子体频率降低到小于500KHz可以降低反应温度。 这提供了在480℃和更低的温度下的氮化。
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19.发明授权Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD 失效用于钨CVD的旋转基座半导体晶圆处理集群工具模块
公开(公告)号：US5370739A
公开(公告)日：1994-12-06
申请号：US899826
申请日：1992-06-15
IPC分类号： C23C16/14 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/48 , C23C16/54 , H01L21/285 , H01L21/683 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/455 , C23C16/45508 , C23C16/45521 , C23C16/4584 , C23C16/46 , C23C16/466 , C23C16/54 , H01L21/6838
摘要： A semiconductor wafer processing apparatus or module for a cluster tool is provided with a single wafer rotating susceptor that thins the gas boundary layer to facilitate the transfer of material to or from the wafer, in, for example, CVD for blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto a rapidly rotating wafer, for example at from 500 to 1500 RPM, thinning a boundary layer for gas flowing radially outwardly from a stagnation point at the wafer center. Smoothly shaped interior reactor surfaces include baffles and plasma cleaning electrodes to minimize turbulence. Inert gases from within the rotating susceptor minimize turbulence by filling gaps in structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge.
摘要翻译： 用于集群工具的半导体晶片处理装置或模块设置有单个晶片旋转基座，其使气体边界层变薄，以便于将材料转移到晶片或从晶片转移，例如用于覆盖或选择性沉积钨的CVD 或氮化钛，以及脱气和退火工艺。 优选地，面向下的喷头将来自冷却的混合室的气体混合物引导到快速旋转的晶片上，例如以500至1500RPM，从而在晶片中心的停滞点径向向外流动的气体的边界层变薄。 平滑形状的内部反应器表面包括挡板和等离子体清洁电极，以最小化湍流。 来自旋转基座内的惰性气体通过填充结构间隙来最小化湍流，防止运动部件的污染，在基座和晶片之间传导热量，并将晶片真空夹紧到基座。 感受体唇缘围绕晶片并且可移除以用于清洁，以适应不同尺寸的晶片，并且允许将唇缘材料改变为用于不同过程的唇缘材料，例如在选择性CVD期间将抵抗沉积物的唇缘材料，或者在毯式CVD中清除未使用气体的那些 。 唇缘平滑气流，降低了晶片边缘的热梯度。
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20.发明授权Semiconductor wafer processing method and apparatus with heat and gas flow control 失效具有热和气流控制的半导体晶片加工方法和装置
公开(公告)号：US5356476A
公开(公告)日：1994-10-18
申请号：US898800
申请日：1992-06-15
IPC分类号： H01L21/205 , C23C16/14 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/54 , H01L21/00 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4405 , C23C16/455 , C23C16/45502 , C23C16/45512 , C23C16/45521 , C23C16/45591 , C23C16/4584 , C23C16/46 , C23C16/466 , C23C16/54 , H01L21/67109
摘要： A semiconductor wafer processing apparatus is provided with a susceptor for supporting a wafer for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto an upwardly facing wafer on the susceptor. Smooth interior reactor surfaces include baffles and a susceptor lip and wall shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge. The susceptor design reduces heat flow from the susceptor to other reactor parts by conduction or radiation.
摘要翻译： 半导体晶片处理装置设置有用于支撑诸如覆盖或选择性沉积钨或氮化钛的膜的CVD晶片的基座，以及脱气和退火工艺。 优选地，面向下的喷头将来自冷却的混合室的气体混合物引导到基座上的朝上的晶片上。 平滑的内部反应器表面包括挡板和基座唇缘和壁形，以最小化湍流。 惰性气体通过填充基座结构中的间隙来减少湍流，防止运动部件的污染，在基座和晶片之间传导热量，并将晶片真空夹紧到基座。 感受体唇缘围绕晶片并且可移除以用于清洁，以适应不同尺寸的晶片，并且允许将唇缘材料改变为用于不同过程的唇缘材料，例如在选择性CVD期间将抵抗沉积物的唇缘材料，或者在毯式CVD中清除未使用气体的那些 。 唇缘平滑气流，降低了晶片边缘的热梯度。 基座设计通过传导或辐射减少从基座到其他反应器部件的热流。
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