公开(公告)号：US20230125777A1

公开(公告)日：2023-04-27

申请号：US18047441

申请日：2022-10-18

Applicant: ROHM Co., LTD.

Inventor： Tetsuo Yamato ,  Shuntaro Takahashi ,  Kazuki Okuyama

IPC: H03K17/687

Abstract: Disclosed is a switch device including a first terminal, a second terminal, a third terminal, a switch element disposed between the first terminal and the second terminal, a control line that reaches a control end of the switch element from the third terminal, a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal, at least one second circuit block, each second circuit block being connected to a corresponding one of branch power supply lines that branch from the control line, a first resistor disposed between the third terminal and the first circuit block, and at least one second resistor, each second resistor being disposed on a corresponding one of the branch power supply lines.

公开(公告)号：US11289894B2

公开(公告)日：2022-03-29

申请号：US16856531

申请日：2020-04-23

Applicant: ROHM CO., LTD.

Inventor： Toru Takuma ,  Shuntaro Takahashi ,  Naoki Takahashi

IPC: H02H3/08 ,  H02H9/02 ,  B60R16/02 ,  G05F1/573 ,  G06F1/30 ,  H03K19/003 ,  H02H5/04 ,  H03K17/08

Abstract: An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.

公开(公告)号：US11128117B2

公开(公告)日：2021-09-21

申请号：US16042637

申请日：2018-07-23

Applicant: Rohm Co., Ltd.

Inventor： Naoki Takahashi ,  Shuntaro Takahashi ,  Toru Takuma

IPC: H02H3/00 ,  H02J7/00 ,  H01L27/02 ,  H02H9/04 ,  H02H11/00 ,  H03K17/08 ,  H01L29/866

Abstract: A protection circuit includes: a high-side switch connected to a power terminal to which a predetermined power supply voltage VBB is supplied from an onboard battery; and an NMOS transistor MT1 connected to the high-side switch and configured to prevent an electrical conduction to the high-side switch when the onboard battery is reverse-connected to the power terminal, wherein a semiconductor integrated circuit is protected from a breakdown due to the reverse connection of the external power supply. A semiconductor integrated circuit apparatus includes the above-mentioned protection circuit configured to protect a semiconductor integrated circuit connected between the power terminal and the ground terminal, from an electro-static discharge breakdown. The protection circuit is connected to the clamp circuit unit inserted between the power terminal and the ground terminal, and is configured to protect the clamp circuit unit from a breakdown when the external power supply is reverse-connected.

公开(公告)号：US10826486B2

公开(公告)日：2020-11-03

申请号：US15768658

申请日：2016-09-26

Applicant: Rohm Co., Ltd.

Inventor： Shuntaro Takahashi

IPC: H03K17/687 ,  H03K17/14 ,  H02M1/08 ,  B60R16/03

Abstract: This switch drive circuit drives a switch element. The switch drive circuit is provided with a signal input terminal, a disconnect circuit and a connect circuit. A control signal is input into the signal input terminal. The disconnect circuit includes a first switch which switches connection/disconnection of a line connecting the signal input terminal to a control terminal of the switch element, and when the switch element is to be turned off, the disconnect circuit performs a disconnection operation to disconnect the line using the first switch. The connect circuit includes a second switch which switches connection/disconnection between a certain point on the line, positioned on the control terminal side of the first switch, and a reference potential point, and when the switch element is to be turned off, the connect circuit performs a connection operation to connect the certain point to the reference potential point using the second switch.

公开(公告)号：US20190006246A1

公开(公告)日：2019-01-03

申请号：US16064682

申请日：2016-10-31

Applicant: Rohm Co., Ltd.

Inventor： Hirofumi Yuki ,  Shuntaro Takahashi ,  Hiroshi Furutani

IPC: H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/78 ,  H03K17/08

Abstract: This semiconductor device comprises: an n-type semiconductor substrate which is connected to an output terminal; a first p-type well which is formed in the n-type semiconductor substrate; a first n-type semiconductor region which is formed in the first p-type well and is connected to a control terminal; and a potential separation part which is connected between the first p-type well and a ground terminal. The potential separation part sets the first p-type well and the ground terminal to a same potential when the output terminal is held at a higher potential than the ground terminal, and sets the first p-type well and the output terminal to a same potential when the output terminal is held at a lower potential than the ground terminal.

公开(公告)号：US12218124B2

公开(公告)日：2025-02-04

申请号：US18049731

申请日：2022-10-26

Applicant: ROHM Co., LTD.

Inventor： Toru Takuma ,  Adrian Joita ,  Shuntaro Takahashi

IPC: H03K17/06 ,  H01L27/02 ,  H01L29/78 ,  H02M3/156 ,  H03K17/082 ,  H03K19/0185 ,  H02M1/08

Abstract: Disclosed is a gate control circuit that generates a gate control signal of an output transistor connected between an application end of a power supply voltage and an application end of an output voltage. The gate control circuit includes a first current source connected between the application end of the power supply voltage and the application end of the output voltage, a second current source connected between an application end of a booster voltage and an application end of a reference voltage, the booster voltage being raised to a voltage value higher than the power supply voltage in a steady state, an output stage that uses at least one of the first and second current sources to generate a gate charge current for charging a gate of the output transistor, and a controller that uses at least one of the first and second current sources according to the output voltage.

公开(公告)号：US12183663B2

公开(公告)日：2024-12-31

申请号：US18510204

申请日：2023-11-15

Applicant: ROHM CO., LTD.

Inventor： Kazuki Okuyama ,  Shuntaro Takahashi ,  Motoharu Haga ,  Shingo Yoshida ,  Kazuhisa Kumagai ,  Hajime Okuda

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/765 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US12119813B2

公开(公告)日：2024-10-15

申请号：US18047441

申请日：2022-10-18

Applicant: ROHM Co., LTD.

Inventor： Tetsuo Yamato ,  Shuntaro Takahashi ,  Kazuki Okuyama

IPC: H03K17/687 ,  H01H47/00 ,  H01H47/04 ,  H01H47/32

CPC classification number: H03K17/687 ,  H03K2217/0063 ,  H03K2217/0072

Abstract: Disclosed is a switch device including a first terminal, a second terminal, a third terminal, a switch element disposed between the first terminal and the second terminal, a control line that reaches a control end of the switch element from the third terminal, a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal, at least one second circuit block, each second circuit block being connected to a corresponding one of branch power supply lines that branch from the control line, a first resistor disposed between the third terminal and the first circuit block, and at least one second resistor, each second resistor being disposed on a corresponding one of the branch power supply lines.

公开(公告)号：US12021012B2

公开(公告)日：2024-06-25

申请号：US17044658

申请日：2019-04-11

Applicant: ROHM CO., LTD.

Inventor： Kazuki Okuyama ,  Shuntaro Takahashi ,  Motoharu Haga ,  Shingo Yoshida ,  Kazuhisa Kumagai ,  Hajime Okuda

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/765 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L23/49562 ,  H01L21/4825 ,  H01L21/565 ,  H01L21/765 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/48 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2924/13091

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US11870236B2

公开(公告)日：2024-01-09

申请号：US17592807

申请日：2022-02-04

Applicant: Rohm Co., Ltd.

Inventor： Toru Takuma ,  Shuntaro Takahashi ,  Naoki Takahashi

IPC: H02H3/08 ,  H02H9/02 ,  B60R16/02 ,  G05F1/573 ,  G06F1/30 ,  H03K19/003 ,  H02H5/04 ,  H03K17/08

CPC classification number: H02H3/08 ,  B60R16/02 ,  G05F1/573 ,  G06F1/305 ,  H02H9/02 ,  H02H9/025 ,  H03K19/00315 ,  H02H3/085 ,  H02H5/04 ,  H03K2017/0806

Abstract: An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.