Multi-section fishing device
    11.
    发明授权

    公开(公告)号:US10149463B2

    公开(公告)日:2018-12-11

    申请号:US15499273

    申请日:2017-04-27

    申请人: Eric Hudson

    发明人: Eric Hudson Van Lee

    IPC分类号: A01K85/00 A01K85/18 A01K91/06

    摘要: A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.

    Multi-section fishing device
    12.
    发明授权

    公开(公告)号:US09655353B1

    公开(公告)日:2017-05-23

    申请号:US15079587

    申请日:2016-03-24

    申请人: Eric Hudson

    发明人: Eric Hudson Van Lee

    IPC分类号: A01K85/00 A01K85/18

    CPC分类号: A01K85/18 A01K85/00 A01K91/06

    摘要: A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.

    Negative ion control for dielectric etch
    14.
    发明授权
    Negative ion control for dielectric etch 有权
    负离子控制电介质蚀刻

    公开(公告)号:US09117767B2

    公开(公告)日:2015-08-25

    申请号:US13188421

    申请日:2011-07-21

    摘要: Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

    摘要翻译: 提供了在电容耦合等离子体室中用于半导体处理的装置,方法和计算机程序。 腔室包括底部射频(RF)信号发生器,顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极,并且顶部RF信号发生器耦合到顶部电极。 此外,底部RF信号被设置在第一相位,并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外,RF相位控制器可操作以跟踪第一相位和第二相位,以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值,导致增加 到晶片表面的负离子通量。

    Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
    15.
    发明授权
    Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber 有权
    在可调间隙等离子体室中双重限制和超高压的方法和装置

    公开(公告)号:US08869741B2

    公开(公告)日:2014-10-28

    申请号:US12368843

    申请日:2009-02-10

    摘要: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

    摘要翻译: 提供了一种等离子体处理系统,其具有用于处理基板的等离子体处理室。 等离子体处理系统至少包括用于处理衬底的上电极和下电极。 在等离子体处理期间,衬底设置在下电极上,其中上电极和衬底形成第一间隙。 等离子体处理系统还包括上电极周边延伸(UE-PE)。 UE-PE机械地耦合到上电极的周边,其中UE-PE被配置为与上电极非共面。 等离子体处理系统还包括盖环。 盖环被配置为同心地围绕下电极,其中UE-PE和盖环形成第二间隙。

    Electronic Knob for Tuning Radial Etch Non-Uniformity at VHF Frequencies
    16.
    发明申请
    Electronic Knob for Tuning Radial Etch Non-Uniformity at VHF Frequencies 有权
    用于调谐VHF频率径向蚀刻非均匀性的电子旋钮

    公开(公告)号:US20140054268A1

    公开(公告)日:2014-02-27

    申请号:US13594768

    申请日:2012-08-24

    IPC分类号: H05H1/46 B44C1/22

    摘要: System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated to the electrode via a conductive delivery connection and returned through a conductive return connection. A capacitance is applied to a first end that causes appropriate capacitive adjustment and opposite impedance adjustment at a second end of the conductive delivery connection that is coupled to a dielectric surround structure that surrounds the electrode. The dielectric surround structure presents the opposite impedance adjustment near an outer edge of the electrode, such that increasing the capacitance at the first end causes a corresponding increase of impedance at the second end and a corresponding increase in voltage distribution near the outer edge region of the electrode that decreases toward a center of the support surface of the electrode.

    摘要翻译: 用于等离子体处理晶片的系统和方法包括具有电极的室,其具有支撑表面和限定在其上的外边缘区域。 射频功率通过导电输送连接传送到电极,并通过导电返回连接返回。 电容被施加到第一端,其导致适当的电容调整,并且在导电输送连接的第二端处相反阻抗调节,该第二端耦合到围绕电极的电介质环绕结构。 电介质环绕结构在电极的外边缘附近呈现相反的阻抗调节,使得增加第一端处的电容导致在第二端处的阻抗相应增加,并且在外部边缘区域附近的电压分布相应增加 电极朝向电极的支撑表面的中心减小。

    Tunable uniformity in a plasma processing system
    17.
    发明授权
    Tunable uniformity in a plasma processing system 有权
    等离子体处理系统的可调均匀性

    公开(公告)号:US08635971B2

    公开(公告)日:2014-01-28

    申请号:US11393753

    申请日:2006-03-31

    申请人: Eric Hudson

    发明人: Eric Hudson

    摘要: A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources. The source can be arranged to provide substantively uniform illumination, or can illuminate according to a non-uniform intensity distribution to compensate for existing non-uniformities in the plasma density or in the plasma process. Such sources can be embedded in the inner or outer electrode part of a multi-piece showerhead electrode assembly, or elsewhere in the chamber.

    摘要翻译: 提供了通过局部影响等离子体的密度来调整具有大鞘电位的等离子体的均匀性的方法。 该方法包括用来自源的电磁辐射来照射暴露于等离子体的物体,其中主体和源被协同地配置,使得当暴露于来自源的辐射时,主体将产生光电子。 这种电磁辐射的一个例子是真空紫外线,这样的一个实例是包围半导体衬底的边缘环。 从边缘环发射的光电子由等离子体捕获并以足够的能量加速到等离子体中以引起电离,局部地增加等离子体密度。 辐射源可以是多个离散源或一个或多个扩展源。 源可以被布置为提供实质上均匀的照明,或者可以根据不均匀的强度分布照亮以补偿等离子体密度或等离子体处理中现有的不均匀性。 这样的源可以嵌入在多件式喷头电极组件的内部或外部电极部分中,或者室内的其他地方。

    User interface system and method for diagnosing a rotating machine condition not based upon prior measurement history
    18.
    发明授权
    User interface system and method for diagnosing a rotating machine condition not based upon prior measurement history 有权
    用户界面系统和方法,用于诊断不基于先前测量历史的旋转机器状态

    公开(公告)号:US08478548B2

    公开(公告)日:2013-07-02

    申请号:US12688736

    申请日:2010-01-15

    IPC分类号: G01M13/02

    摘要: A vibration data collection and rotating machinery fault diagnostic instrument includes a machine setup engine, a measurement engine, a diagnostic engine, a measurement user interface module, a machine setup user interface module, and a diagnostic user interface module. The machine setup engine requests and receives parameters about the machinery through the machine setup user interface module. The measurement engine requests and receives sensor placement locations through the measurement user interface module and keeps track of locations that have been measured and locations that still need to be measured. The diagnostic engine diagnoses machinery faults and presents the information to the user through the diagnostic user interface module using an intuitive graphical severity scale.

    摘要翻译: 振动数据采集和旋转机械故障诊断仪器包括机器设置引擎,测量引擎,诊断引擎,测量用户界面模块,机器设置用户界面模块和诊断用户界面模块。 机器设置引擎通过机器设置用户界面模块来请求并接收关于机器的参数。 测量引擎通过测量用户界面模块请求并接收传感器放置位置,并跟踪已测量的位置和仍需要测量的位置。 诊断引擎诊断机械故障,并通过诊断用户界面模块使用直观的图形严重性量表将信息提供给用户。

    Method and apparatus for inducing DC voltage on wafer-facing electrode
    19.
    发明授权
    Method and apparatus for inducing DC voltage on wafer-facing electrode 有权
    用于在面向晶片的电极上感应直流电压的方法和装置

    公开(公告)号:US08450635B2

    公开(公告)日:2013-05-28

    申请号:US12047813

    申请日:2008-03-13

    IPC分类号: B23K10/00

    CPC分类号: H01J37/32183 H01J37/32091

    摘要: A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.

    摘要翻译: 公开了一种处理衬底的方法。 该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。 该方法还包括将无源射频(RF)电路耦合到第二电极,被动RF电路被配置为调节第二电极上的RF阻抗,RF电压电位和DC偏置电位中的一个或多个。

    Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
    20.
    发明授权
    Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
    使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法

    公开(公告)号:US07837826B2

    公开(公告)日:2010-11-23

    申请号:US11487999

    申请日:2006-07-18

    IPC分类号: C23C16/00 H01L21/306

    摘要: A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

    摘要翻译: 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极,其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场,其减少等离子体的带电粒子的数量远离等离子体扩散。