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    Field-effect transistor, field-effect transistor array structure and method of manufacturing field-effect transistor
    15.
    发明授权
    Field-effect transistor, field-effect transistor array structure and method of manufacturing field-effect transistor 有权

    公开(公告)号：US11640980B2

    公开(公告)日：2023-05-02

    申请号：US17399175

    申请日：2021-08-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghee Lee ,  Sangwook Kim

    IPC: H01L29/423 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/24

    Abstract: A field-effect transistor includes a gate structure comprising a structure in which a first insulating layer, a first gate electrode, and a second insulating layer are sequentially stacked on a first conductive layer, the gate structure surrounding a first hole through the first insulating layer and exposing a part of the first conductive layer; a second conductive layer on the second insulating layer and surrounding a second hole connected to the first hole and exposing a part of the first conductive layer; a first gate insulating layer covering an inner wall of the gate structure exposed by the first hole; a semiconductor layer covering a part of the first conductive layer exposed through the first hole and the second hole, the first gate insulating layer, and the second conductive layer; a second gate insulating layer covering the semiconductor layer; and a second gate electrode filling the first and second holes.

    PIXEL ARRAY OF IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    16.
    发明申请
    PIXEL ARRAY OF IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220384508A1

    公开(公告)日：2022-12-01

    申请号：US17703217

    申请日：2022-03-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongmin Keum ,  Taehan Kim ,  Bumsuk Kim ,  Junsung Park ,  Kwanghee Lee ,  Yunki Lee

    IPC: H01L27/146 ,  H01L21/66 ,  H04N5/369 ,  H04N5/341

    Abstract: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.

    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS
    17.
    发明申请
    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS 有权

    公开(公告)号：US20220181372A1

    公开(公告)日：2022-06-09

    申请号：US17507374

    申请日：2021-10-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taesung LEE ,  Dongmin Keum ,  Bumsuk Kim ,  Jinho Kim ,  Junsung Park ,  Kwanghee Lee ,  Dongkyu Lee ,  Yunki Lee

    IPC: H01L27/146 ,  H04N5/232

    Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.

    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT
    18.
    发明申请
    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT 审中-公开

    公开(公告)号：US20200075656A1

    公开(公告)日：2020-03-05

    申请号：US16286897

    申请日：2019-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wook Lee ,  Euiyoung Song ,  Kwanghee Lee ,  Uihui Kwon ,  Jae Ho Kim ,  Jungchak Ahn

    IPC: H01L27/146 ,  G02B5/18

    Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.

    Method and electronic device for guiding semiconductor manufacturing process
    20.
    发明授权
    Method and electronic device for guiding semiconductor manufacturing process 有权

    公开(公告)号：US11693386B2

    公开(公告)日：2023-07-04

    申请号：US16992919

    申请日：2020-08-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaeho Kim ,  Kanghyun Baek ,  Kwanghee Lee ,  Yongwoo Jeon ,  Uihui Kwon ,  Yoonsuk Kim

    IPC: G05B19/4097 ,  G06N20/00

    CPC classification number: G05B19/4097 ,  G06N20/00 ,  G05B2219/45031

    Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor product based on the plurality of process policies.

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