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公开(公告)号:US11436022B2
公开(公告)日:2022-09-06
申请号:US16599358
申请日:2019-10-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Cholmin Kim , Jiyong Lee , Jongmin Park , Deokho Seo , Kwanghee Lee
IPC: G06F13/00 , G06F9/4401 , G06Q20/06 , G06F13/16 , G06F21/60
Abstract: A semiconductor memory device for a hash solution includes a hashing logic block including a plurality of hashing logics configured to perform a hash function, a memory cell block including a plurality of memory cells, and an input/output (I/O) control structure configured to change a data interface between the hashing logic block and the memory cell block based on a characteristic of the hash function to be performed.
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公开(公告)号:US10483414B2
公开(公告)日:2019-11-19
申请号:US15830166
申请日:2017-12-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seunghoon Han , Lilong Shi , Kwanghee Lee , Changgyun Shin
IPC: H01L31/0232 , H01L27/146 , H01L27/30 , H01L51/42 , H01L31/103 , H01L31/101
Abstract: A stack-type image sensor may include a photodiode and a meta-filter. The photodiode may include a first photodiode configured to absorb first light of a first wavelength band and a second photodiode disposed on the first photodiode and configured to absorb second light of a second wavelength band. The meta-filter may include a first meta-filter disposed in a lower portion of the first photodiode and configured to reflect the first light of the first wavelength band to the first photodiode.
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公开(公告)号:US11968848B2
公开(公告)日:2024-04-23
申请号:US17071364
申请日:2020-10-15
Inventor: Seunghoon Han , Kwanghee Lee , Yongwan Jin , Yongsung Kim , Changgyun Shin , Jeongyub Lee , Amir Arbabi , Andrei Faraon , Yu Horie
IPC: H10K39/32 , H01L27/146
CPC classification number: H10K39/32 , H01L27/14621 , H01L27/14636 , H01L27/14645
Abstract: An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.
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公开(公告)号:US20230307553A1
公开(公告)日:2023-09-28
申请号:US18324638
申请日:2023-05-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinseong Heo , Taehwan Moon , Hagyoul Bae , Seunggeol Nam , Sangwook Kim , Kwanghee Lee
CPC classification number: H01L29/86 , H10K10/50 , H10K19/00 , H10K19/201 , H10B69/00
Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
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公开(公告)号:US11640980B2
公开(公告)日:2023-05-02
申请号:US17399175
申请日:2021-08-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwanghee Lee , Sangwook Kim
IPC: H01L29/423 , H01L27/088 , H01L29/78 , H01L29/06 , H01L29/24
Abstract: A field-effect transistor includes a gate structure comprising a structure in which a first insulating layer, a first gate electrode, and a second insulating layer are sequentially stacked on a first conductive layer, the gate structure surrounding a first hole through the first insulating layer and exposing a part of the first conductive layer; a second conductive layer on the second insulating layer and surrounding a second hole connected to the first hole and exposing a part of the first conductive layer; a first gate insulating layer covering an inner wall of the gate structure exposed by the first hole; a semiconductor layer covering a part of the first conductive layer exposed through the first hole and the second hole, the first gate insulating layer, and the second conductive layer; a second gate insulating layer covering the semiconductor layer; and a second gate electrode filling the first and second holes.
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公开(公告)号:US20220384508A1
公开(公告)日:2022-12-01
申请号:US17703217
申请日:2022-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongmin Keum , Taehan Kim , Bumsuk Kim , Junsung Park , Kwanghee Lee , Yunki Lee
IPC: H01L27/146 , H01L21/66 , H04N5/369 , H04N5/341
Abstract: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.
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公开(公告)号:US20220181372A1
公开(公告)日:2022-06-09
申请号:US17507374
申请日:2021-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taesung LEE , Dongmin Keum , Bumsuk Kim , Jinho Kim , Junsung Park , Kwanghee Lee , Dongkyu Lee , Yunki Lee
IPC: H01L27/146 , H04N5/232
Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.
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公开(公告)号:US20200075656A1
公开(公告)日:2020-03-05
申请号:US16286897
申请日:2019-02-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wook Lee , Euiyoung Song , Kwanghee Lee , Uihui Kwon , Jae Ho Kim , Jungchak Ahn
IPC: H01L27/146 , G02B5/18
Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.
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公开(公告)号:US11699765B2
公开(公告)日:2023-07-11
申请号:US17461034
申请日:2021-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinseong Heo , Taehwan Moon , Hagyoul Bae , Seunggeol Nam , Sangwook Kim , Kwanghee Lee
CPC classification number: H01L29/86 , H10B69/00 , H10K10/50 , H10K19/00 , H10K19/201
Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
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公开(公告)号:US11693386B2
公开(公告)日:2023-07-04
申请号:US16992919
申请日:2020-08-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaeho Kim , Kanghyun Baek , Kwanghee Lee , Yongwoo Jeon , Uihui Kwon , Yoonsuk Kim
IPC: G05B19/4097 , G06N20/00
CPC classification number: G05B19/4097 , G06N20/00 , G05B2219/45031
Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor product based on the plurality of process policies.
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