公开(公告)号：US20230246034A1

公开(公告)日：2023-08-03

申请号：US18134117

申请日：2023-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Haruyuki BABA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/66757 ,  H01L29/78693 ,  G02F2201/44 ,  G02F1/136222

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US20220285555A1

公开(公告)日：2022-09-08

申请号：US17743956

申请日：2022-05-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/778

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20220231131A1

公开(公告)日：2022-07-21

申请号：US17611933

申请日：2020-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki IKEDA ,  Hitoshi KUNITAKE ,  Hajime KIMURA ,  Haruyuki BABA

IPC: H01L29/24 ,  H01L27/06 ,  H01L23/66

Abstract: A semiconductor device with low power consumption is provided. In a cascode circuit including a first transistor provided on a low power supply potential side and a second transistor provided on a high power supply potential side, a source or a drain of a third transistor and a capacitor are connected to a gate of the second transistor. A gate of the first transistor is electrically connected to a back gate of the second transistor. An OS transistor is used as the third transistor.

公开(公告)号：US20180013005A1

公开(公告)日：2018-01-11

申请号：US15697513

申请日：2017-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Akio SUZUKI ,  Hiromi SAWAI ,  Masahiko HAYAKAWA ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L21/203

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/203 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.

公开(公告)号：US20180012739A1

公开(公告)日：2018-01-11

申请号：US15642652

申请日：2017-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Haruyuki BABA

IPC: H01J37/34 ,  B28B1/00 ,  H01L29/24 ,  H01L27/12 ,  H01L21/02 ,  B28B11/24 ,  C23C14/08 ,  C23C14/34 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1335

CPC classification number: H01J37/3429 ,  B28B1/008 ,  B28B11/24 ,  C04B35/01 ,  C04B35/453 ,  C04B35/58 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3852 ,  C04B2235/72 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414 ,  G02F1/133345 ,  G02F1/133514 ,  G02F1/133553 ,  G02F1/1368 ,  G02F2203/02 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

公开(公告)号：US20250159942A1

公开(公告)日：2025-05-15

申请号：US19023974

申请日：2025-01-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H10D30/67 ,  H10D64/66 ,  H10D64/68

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US20230329002A1

公开(公告)日：2023-10-12

申请号：US18023618

申请日：2021-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Haruyuki BABA ,  Yuki ITO ,  Fumito ISAKA ,  Kazuki TANEMURA ,  Yasumasa YAMANE ,  Tatsuya ONUKI

IPC: H10B53/30

CPC classification number: H10B53/30

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

公开(公告)号：US20220416124A1

公开(公告)日：2022-12-29

申请号：US17779697

申请日：2020-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuki TANEMURA ,  Haruyuki BABA ,  Takahiro FUKUTOME

IPC: H01L33/26 ,  H01L27/15 ,  H01L49/02 ,  H01L29/24 ,  H01L29/786 ,  H01L33/60 ,  H01L33/00

Abstract: A semiconductor device including an inorganic light-emitting element is provided. The semiconductor device includes the inorganic light-emitting element, a transistor, and a capacitor. The inorganic light-emitting element includes a first film and a second film. The first film contains indium, oxygen, and nitrogen, and the second film contains gallium and nitrogen. The first film has a wurtzite structure or a cubic crystal structure, and the second film has a wurtzite structure and grows on the first film. The first film functions as a cathode electrode of the inorganic light-emitting element. One electrode of the capacitor is formed above the second film included in the inorganic light-emitting element, and the transistor including a metal oxide in a semiconductor layer is formed above the other electrode of the capacitor. The one electrode of the capacitor has a function of reflecting light emitted from the inorganic light-emitting element. The inorganic light-emitting element emits light through the first film.

公开(公告)号：US20220254932A1

公开(公告)日：2022-08-11

申请号：US17617411

申请日：2020-06-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akio SUZUKI ,  Haruyuki BABA

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device for high power consumption is provided. The semiconductor device includes a substrate, a first conductor over the substrate, a first metal oxide over the first conductor, a first oxide over the first metal oxide, a second oxide over the first oxide, a first insulator over the second oxide, a second conductor over the first insulator, a second insulator over the second conductor, a third insulator in contact with a side surface of the second conductor, a side surface of the first insulator, and a side surface of the second insulator, a second metal oxide over the second oxide, the second insulator, and the third insulator, and a third conductor over the second metal oxide. The second conductor includes a region overlapping with the second oxide. The third conductor includes a region in contact with the second metal oxide. The second metal oxide includes a region in contact with the second oxide. The carrier concentration of the second oxide is lower than the carrier concentration the first oxide.

公开(公告)号：US20210226062A1

公开(公告)日：2021-07-22

申请号：US17256341

申请日：2019-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.