公开(公告)号：US11489076B2

公开(公告)日：2022-11-01

申请号：US16918472

申请日：2020-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US10573758B2

公开(公告)日：2020-02-25

申请号：US15617696

申请日：2017-06-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazuya Hanaoka ,  Daisuke Matsubayashi ,  Yoshiyuki Kobayashi ,  Shunpei Yamazaki ,  Shinpei Matsuda

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/78

Abstract: Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

公开(公告)号：US10043828B2

公开(公告)日：2018-08-07

申请号：US15645251

申请日：2017-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kenichi Okazaki ,  Masahiko Hayakawa ,  Shinpei Matsuda

IPC: H01L27/12 ,  G02F1/1343 ,  H01L29/786 ,  G02F1/1368

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

公开(公告)号：US09899420B2

公开(公告)日：2018-02-20

申请号：US14290251

申请日：2014-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Seiko Inoue ,  Shinpei Matsuda ,  Daisuke Matsubayashi ,  Masahiko Hayakawa

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/3258 ,  H01L27/3262

Abstract: In a pixel including a selection transistor, a driver transistor, and a light-emitting element, as the driver transistor, a transistor is used in which a channel is formed in an oxide semiconductor film and its channel length is 0.5 μm or greater and 4.5 μm or less. The driver transistor includes a first gate electrode over an oxide semiconductor film and a second gate electrode below the oxide semiconductor film. The first gate electrode and the second gate electrode are electrically connected to each other and overlap with the oxide semiconductor film. Furthermore, in the selection transistor of a pixel, which does not need to have field-effect mobility as high as that of the driver transistor, a channel length is made longer than at least the channel length of the driver transistor.

公开(公告)号：US09825181B2

公开(公告)日：2017-11-21

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Kazuya Sugimoto ,  Tsutomu Murakawa ,  Motoki Nakashima ,  Shinpei Matsuda ,  Noritaka Ishihara ,  Daisuke Kurosaki ,  Toshimitsu Obonai ,  Hiroshi Kanemura ,  Junichi Koezuka

IPC: H01L29/22 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H03K17/687 ,  H01L27/105 ,  G09G3/20

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US12132090B2

公开(公告)日：2024-10-29

申请号：US18371814

申请日：2023-09-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio Suzuki ,  Shinpei Matsuda ,  Shunpei Yamazaki

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778 ,  H01L29/786 ,  H01L29/788 ,  H10B41/70

CPC classification number: H01L29/42324 ,  H01L29/0673 ,  H01L29/40114 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7883 ,  H10B41/70

Abstract: A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.

公开(公告)号：US11777005B2

公开(公告)日：2023-10-03

申请号：US17324386

申请日：2021-05-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio Suzuki ,  Shinpei Matsuda ,  Shunpei Yamazaki

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L29/788 ,  H01L29/06 ,  H01L29/775 ,  H10B41/70 ,  H01L21/28 ,  H01L29/778

CPC classification number: H01L29/42324 ,  H01L29/0673 ,  H01L29/40114 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/7883 ,  H01L29/78696 ,  H10B41/70

Abstract: A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.

公开(公告)号：US11721769B2

公开(公告)日：2023-08-08

申请号：US17743956

申请日：2022-05-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/823412 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US11342462B2

公开(公告)日：2022-05-24

申请号：US16918472

申请日：2020-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US09917110B2

公开(公告)日：2018-03-13

申请号：US15125845

申请日：2015-03-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shinpei Matsuda ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/1229 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/7854 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device that is suitable for miniaturization is provided. The semiconductor device has a plurality of different transistors, active layers of the plurality of transistors are each an oxide semiconductor, and in the plurality of transistors, field-effect mobility of a transistor whose channel length is maximum and field-effect mobility of a transistor whose channel length is minimum are substantially constant. Alternatively, when channel lengths ranges from 0.01 μm to 100 μm, a reduction in field-effect mobility of a transistor whose channel length is minimum with respect to field-effect mobility of a transistor whose channel length is maximum is less than or equal to 70%.