公开(公告)号：US20140183548A1

公开(公告)日：2014-07-03

申请号：US14140054

申请日：2013-12-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Young Hwan SON ,  Daewoong SUH

IPC: H01L31/0304

CPC classification number: H01L31/03048 ,  H01L31/108 ,  H01L31/1848 ,  Y02E10/544

Abstract: A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

Abstract translation: 光检测装置包括衬底，设置在衬底上的缓冲层，设置在缓冲层的一部分上的第一带隙变化层，设置在第一带隙变化层上的光吸收层，设置在第一带隙变化层上的肖特基层 部分光吸收层，以及设置在肖特基层的一部分上的第一电极层。

公开(公告)号：US20140167086A1

公开(公告)日：2014-06-19

申请号：US14105919

申请日：2013-12-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min JANG ,  Kyu-Ho LEE ,  Chang Suk HAN ,  Hwa Mok KIM ,  Daewoong SUH ,  Chi Hyun IN ,  Jong Hyeon CHAE

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L29/06

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0657 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region.The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.

Abstract translation: 具有用于分离衬底的空隙的外延晶片和使用其制造的半导体器件。 外延晶片包括衬底，设置在衬底上并包括掩模区域和开口区域的掩模图案以及覆盖掩模图案的外延层。 外延层包括设置在掩蔽区域上的空隙。 通过在空隙处施加化学剥离或应力剥离，外延层可以与生长衬底分离。

公开(公告)号：US20210005785A1

公开(公告)日：2021-01-07

申请号：US17024167

申请日：2020-09-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

IPC: H01L33/38

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20160240743A1

公开(公告)日：2016-08-18

申请号：US15139875

申请日：2016-04-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Chung Hoon LEE ,  Daewoong SUH ,  Jong Min JANG ,  Joon Sup LEE ,  Won Young ROH ,  Min Woo KANG ,  Hyun A KIM ,  Seon Min BAE

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20 ,  H01L33/08

CPC classification number: H01L33/44 ,  H01L27/153 ,  H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0025

Abstract: A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface of the substrate. The transflective portion and the substrate have different indexes of refraction from one another.

Abstract translation: 一种发光器件，包括设置在衬底的一个表面上的发光结构和设置在衬底的另一表面上的半透反射部分。 半透反射部分和基底具有不同的折射率。

公开(公告)号：US20150349192A1

公开(公告)日：2015-12-03

申请号：US14825581

申请日：2015-08-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Young Hwan SON ,  Daewoong SUH

IPC: H01L31/18 ,  H01L31/108

CPC classification number: H01L31/1828 ,  H01L31/022483 ,  H01L31/03529 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/1832 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the light absorption layer including pores formed in a surface thereof, forming a Schottky layer on the surface of the light absorption layer and in the pores thereof, and forming a first electrode layer on the Schottky layer.

Abstract translation: 形成光检测装置的方法包括在基板上形成无孔层，在无孔层上形成光吸收层，所述光吸收层包括在其表面形成的孔，在表面上形成肖特基层 的光吸收层，并且在其孔中，并且在肖特基层上形成第一电极层。

公开(公告)号：US20140183549A1

公开(公告)日：2014-07-03

申请号：US14140086

申请日：2013-12-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Young Hwan SON ,  Daewoong SUH

IPC: H01L31/101 ,  H01L31/0304

CPC classification number: H01L31/125 ,  H01L24/05 ,  H01L24/06 ,  H01L31/0203 ,  H01L31/03044 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/09 ,  H01L31/1013 ,  H01L31/108 ,  H01L31/1848 ,  H01L33/486 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/16195 ,  Y02E10/544 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a photo detection device including a substrate, a first light absorption layer disposed on the substrate, a second light absorption layer disposed in a first region on the first light absorption layer, a third light absorption layer disposed in a second region on the second light absorption layer, and a first electrode layer disposed on each of the first, the second, and the third light absorption layers.

Abstract translation: 本发明的示例性实施例涉及一种光检测装置，其包括基板，设置在基板上的第一光吸收层，设置在第一光吸收层的第一区域中的第二光吸收层，设置在第一光吸收层 第二光吸收层上的第二区域和设置在第一，第二和第三光吸收层中的每一个上的第一电极层。