公开(公告)号：US09520536B2

公开(公告)日：2016-12-13

申请号：US14984829

申请日：2015-12-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/36 ,  H01L33/14 ,  H01L33/62 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/20

CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

公开(公告)号：US20160118564A1

公开(公告)日：2016-04-28

申请号：US14984829

申请日：2015-12-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/24 ,  H01L33/14 ,  H01L33/52

CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

公开(公告)号：US10707382B2

公开(公告)日：2020-07-07

申请号：US16218042

申请日：2018-12-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Sang Won Woo ,  Ji Hye Kim

IPC: H01L33/44 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06 ,  H01L27/15 ,  H01L33/22 ,  F21S45/43 ,  F21K9/66 ,  F21K9/238 ,  F21K9/232 ,  F21S41/143 ,  F21S45/47 ,  F21V8/00 ,  G02F1/13357

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

公开(公告)号：US10672951B2

公开(公告)日：2020-06-02

申请号：US15843847

申请日：2017-12-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Duk Il Suh ,  Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

IPC: H01L33/24 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/14 ,  H01L23/00

Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

公开(公告)号：US10359153B2

公开(公告)日：2019-07-23

申请号：US16166159

申请日：2018-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

IPC: H01L33/24 ,  H01L33/46 ,  F21K9/232 ,  H01L33/32 ,  H01L33/06 ,  H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L25/075 ,  H05K1/18 ,  G06F1/16 ,  F21Y107/70 ,  H01L33/22

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

公开(公告)号：US20190056070A1

公开(公告)日：2019-02-21

申请号：US16166159

申请日：2018-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

IPC: F21K9/232 ,  G06F1/16 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/32 ,  H01L33/00 ,  H01L25/075 ,  H01L33/06

CPC classification number: F21K9/232 ,  F21Y2107/70 ,  G06F1/1662 ,  H01L25/0753 ,  H01L33/0033 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2933/0016 ,  H01L2933/0025 ,  H05K1/189 ,  H05K2201/0108 ,  H05K2201/10106

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

公开(公告)号：US10107458B2

公开(公告)日：2018-10-23

申请号：US15852704

申请日：2017-12-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

IPC: F21K9/232 ,  G06F1/16 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H05K1/18 ,  H01L33/38 ,  F21Y107/70

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

公开(公告)号：US20180198023A1

公开(公告)日：2018-07-12

申请号：US15865051

申请日：2018-01-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Ji Hye Kim ,  Sang Won Woo

IPC: H01L33/14 ,  H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016

Abstract: Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; a first electrode electrically connected to the first conductivity-type semiconductor layer; a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode including a second electrode pad and a second electrode extension extending from the second electrode pad; and a second reflective layer interposed between the second electrode and the transparent electrode layer, wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer.

公开(公告)号：US09865775B2

公开(公告)日：2018-01-09

申请号：US15394333

申请日：2016-12-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Duk Il Suh ,  Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

IPC: H01L33/14 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L24/48 ,  H01L33/145 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

公开(公告)号：US09397264B2

公开(公告)日：2016-07-19

申请号：US14630273

申请日：2015-02-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/40 ,  H01L33/44 ,  H01L33/60 ,  H01L33/36 ,  H01L33/42 ,  H01L33/46 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。