公开(公告)号：US20150200313A1

公开(公告)日：2015-07-16

申请号：US14596213

申请日：2015-01-13

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer

IPC: H01L31/0224 ,  H01L31/0725

CPC classification number: H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact solar cells having a discontinuous emitter comprising a plurality of emitter islands are provided. The back contact solar cell comprises a semiconductor layer with a background base doping and having a sunlight-receiving frontside and a backside opposite said sunlight-receiving frontside. An emitter layer having a doping opposite said semiconductor layer background doping is positioned on the semiconductor layer backside. A trench isolation pattern partitions the emitter layer and semiconductor layer into a plurality of discontinuous emitter regions on the semiconductor layer backside. At least one base island region contacting the semiconductor layer is positioned within each of the discontinuous emitter regions on the semiconductor layer backside.

Abstract translation: 提供具有包括多个发射岛的不连续发射体的背接触太阳能电池。 背接触太阳能电池包括具有背景基底掺杂并具有阳光接收的前沿和与阳光接收的前侧相对的背面的半导体层。 具有与所述半导体层背景掺杂相反的掺杂的发射极层位于半导体层背面。 沟槽隔离图案将发射极层和半导体层分隔成半导体层背面上的多个不连续发射极区域。 接触半导体层的至少一个基岛区域位于半导体层背面的每个不连续发射极区域内。

公开(公告)号：US20150159292A1

公开(公告)日：2015-06-11

申请号：US14563888

申请日：2014-12-08

Applicant: Solexel, Inc.

Inventor： Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani ,  George D. Kamian ,  Jay Ashjaee ,  Takao Yonehara

IPC: C25D11/00 ,  C25D11/02 ,  C25D21/04 ,  C25D11/32

CPC classification number: C25D11/005 ,  C25D7/12 ,  C25D11/022 ,  C25D11/024 ,  C25D11/32 ,  C25D17/001 ,  C25D17/008 ,  C25D17/08 ,  C25D21/04 ,  C25F7/00

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract translation: 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

公开(公告)号：US09053957B2

公开(公告)日：2015-06-09

申请号：US13897323

申请日：2013-05-17

Applicant: Solexel, Inc.

Inventor： Suketu Parikh ,  David Dutton ,  Pawan Kapur ,  Somnath Nag ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Nevran Ozguven ,  Burcu Ucok

IPC: H01L29/06 ,  H01L31/0236 ,  H01L31/18 ,  H01L21/02

CPC classification number: H01L29/0692 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02664 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T29/53265

Abstract: A structure and method operable to create a reusable template for detachable thin semiconductor substrates is provided. The reusable template has a three-dimensional (3-D) surface topography comprising a plurality of raised areas comprising a rounded top and separated by a plurality of depressed areas.

Abstract translation: 提供了一种用于为可分离的薄半导体衬底创建可重用模板的结构和方法。 可再利用模板具有三维（3-D）表面形貌，其包括多个凸起区域，所述凸起区域包括圆形顶部并由多个凹陷区域分隔开。

公开(公告)号：US20140033971A1

公开(公告)日：2014-02-06

申请号：US13726169

申请日：2012-12-23

Applicant: SOLEXEL, INC.

Inventor： Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Anthony Calcaterra ,  David Dutton ,  Pawan Kapur ,  Sean Seutter ,  Homi Fatemi

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C4/01 ,  C23C4/12 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport system moves the workpiece positioned in a batch carrier plate through the controlled atmospheric region.

Abstract translation: 提供了用于多个工件的金属化的加工设备。 所述设备包括与外部氧化环境隔离的受控大气区域和至少一个用于在工件上施加金属层的沉积区域。 运输系统将位于批量运载板中的工件移动通过受控的大气区域。

公开(公告)号：US20130213469A1

公开(公告)日：2013-08-22

申请号：US13855657

申请日：2013-04-02

Applicant: Solexel, Inc.

Inventor： Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Virendra V. Rana ,  David Dutton ,  Sean M. Seutter ,  Anthony Calcaterra ,  Jay Ashjaee ,  Takao Yonehara

IPC: H01L31/0224

CPC classification number: H01L31/022458 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.

Abstract translation: 提供了与太阳能电池的多层金属化相关的制造方法和结构以及用于形成背接触太阳能电池的制造方法和结构。

公开(公告)号：US09806220B2

公开(公告)日：2017-10-31

申请号：US14539978

申请日：2014-11-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Michael Wingert

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

公开(公告)号：US20150144190A1

公开(公告)日：2015-05-28

申请号：US14611982

申请日：2015-02-02

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Sam Tone Tor ,  Anthony Calcaterra

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02008 ,  H01L31/02013 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，在交叉图案上形成导电发射器插头和基座插头，并且附接具有第二互补图案的基极和发射极的背板 在导电发射器和基座插头上形成电互连。

公开(公告)号：US20150129031A1

公开(公告)日：2015-05-14

申请号：US14539978

申请日：2014-11-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Michael Wingert

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的M1金属层，后侧与设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池的背面电绝缘底板，所述背板片包括多个通孔，所述多个通孔使得所述M1层的背面板下方的部分露出; 以及与背板接触的M2层，M2层由包括5-250μm的厚度的预制金属箔材料制成，M2层通过导电孔中的通孔与M1层电连接 底板。

公开(公告)号：US20150129017A1

公开(公告)日：2015-05-14

申请号：US14326461

申请日：2014-07-08

Applicant: Solexel, Inc.

Inventor： David Dutton ,  Pranav Anbalagan ,  Karl-Josef Kramer ,  Mehrdad M. Moslehi

IPC: H01L31/049 ,  H01L31/0216 ,  H01L31/0445

CPC classification number: H01L31/049 ,  H01L31/0445 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: A lamination stack for etching solar cells is provided. At least two solar cell wafers are attached to corresponding backplane sheets which are larger than the solar cell wafers. Release layers larger than the solar cells and smaller than the backplane sheets are positioned on the backplane sheets on the opposite side of the attached solar cell wafers. The backplane sheets are bonded together along the exposed peripheral boundary formed by the release layers.

Abstract translation: 提供了一种用于蚀刻太阳能电池的叠片。 至少两个太阳能电池晶片连接到大于太阳能电池晶片的对应背板上。 大于太阳能电池并且小于背板的释放层位于附着的太阳能电池晶片的相对侧上的背板上。 背板被沿着由剥离层形成的暴露的外围边界粘合在一起。

公开(公告)号：US20140370650A1

公开(公告)日：2014-12-18

申请号：US14179526

申请日：2014-02-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  Michael Wingert

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/18 ,  H01L27/1421 ,  H01L31/02245 ,  H01L31/0516 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.

Abstract translation: 根据所公开的主题的一个方面，提供了一种使用块状晶片形成单片背面接触背面太阳能电池的方法。 发射极和基极接触区形成在具有光接收前侧和与前侧相对的背面的半导体晶片的背面。 第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。 在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。 在电绝缘底板上形成电连接多个岛的金属化结构。