Method of manufacturing semiconductor devices and corresponding semiconductor device

    公开(公告)号:US11521861B2

    公开(公告)日:2022-12-06

    申请号:US16994049

    申请日:2020-08-14

    摘要: Semiconductor dice are arranged on a substrate such as a leadframe. Each semiconductor die is provided with electrically-conductive protrusions (such as electroplated pillars or bumps) protruding from the semiconductor die opposite the substrate. Laser direct structuring material is molded onto the substrate to cover the semiconductor dice arranged thereon, with the molding operation leaving a distal end of the electrically-conductive protrusion to be optically detectable at the surface of the laser direct structuring material. Laser beam processing the laser direct structuring material is then performed with laser beam energy applied at positions of the surface of the laser direct structuring material which are located by using the electrically-conductive protrusions optically detectable at the surface of the laser direct structuring material as a spatial reference.

    Semiconductor package substrate in particular for MEMS devices
    14.
    发明授权
    Semiconductor package substrate in particular for MEMS devices 有权
    半导体封装衬底,特别适用于MEMS器件

    公开(公告)号:US08854830B2

    公开(公告)日:2014-10-07

    申请号:US13779592

    申请日:2013-02-27

    摘要: A semiconductor package substrate suitable for supporting a damage-sensitive device, including a substrate core having a first and opposite surface; at least one pair of metal layers covering the first and opposite surfaces of the package substrate core, which define first and opposite metal layer groups, at least one of said layer groups including at least one metal support zone; one pair of solder mask layers covering the outermost metal layers of the at least one pair of metal layers; and a plurality of routing lines; wherein the at least one metal support zone is formed so that it lies beneath at least one side of the base of the damage-sensitive device and so as to occupy a substantial portion of the area beneath the damage-sensitive device which is free of said routing lines; a method for the production of such substrate is also described.

    摘要翻译: 一种适用于支撑损伤敏感器件的半导体封装衬底,包括具有第一和相对表面的衬底芯; 覆盖封装衬底芯的第一和相对表面的至少一对金属层,其限定第一和相对的金属层组,所述层组中的至少一个包括至少一个金属支撑区; 一对焊接掩模层,覆盖至少一对金属层的最外层金属层; 和多条路线; 其中所述至少一个金属支撑区域被形成为使得其位于所述损伤敏感装置的所述基部的至少一侧的下方,并且占据所述损伤敏感装置下方的所述区域的大部分,所述损伤敏感装置没有所述 路线; 还描述了制造这种基板的方法。

    SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD, IN PARTICULAR FOR MEMS DEVICES
    15.
    发明申请
    SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD, IN PARTICULAR FOR MEMS DEVICES 有权
    半导体封装基板和特别用于MEMS器件的方法

    公开(公告)号:US20130170166A1

    公开(公告)日:2013-07-04

    申请号:US13779592

    申请日:2013-02-27

    IPC分类号: H05K1/02

    摘要: A semiconductor package substrate suitable for supporting a damage-sensitive device, including a substrate core having a first and opposite surface; at least one pair of metal layers covering the first and opposite surfaces of the package substrate core, which define first and opposite metal layer groups, at least one of said layer groups including at least one metal support zone; one pair of solder mask layers covering the outermost metal layers of the at least one pair of metal layers; and a plurality of routing lines; wherein the at least one metal support zone is formed so that it lies beneath at least one side of the base of the damage-sensitive device and so as to occupy a substantial portion of the area beneath the damage-sensitive device which is free of said routing lines; a method for the production of such substrate is also described.

    摘要翻译: 一种适用于支撑损伤敏感器件的半导体封装衬底,包括具有第一和相对表面的衬底芯; 覆盖封装衬底芯的第一和相对表面的至少一对金属层,其限定第一和相对的金属层组,所述层组中的至少一个包括至少一个金属支撑区; 一对焊接掩模层,覆盖至少一对金属层的最外层金属层; 和多条路线; 其中所述至少一个金属支撑区域被形成为使得其位于所述损伤敏感装置的所述基部的至少一侧的下方,并且占据所述损伤敏感装置下方的所述区域的大部分,所述损伤敏感装置没有所述 路线; 还描述了制造这种基板的方法。

    Semiconductor device and corresponding method

    公开(公告)号:US11626355B2

    公开(公告)日:2023-04-11

    申请号:US17470269

    申请日:2021-09-09

    摘要: Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.

    Integrated capacitors on lead frame in semiconductor devices

    公开(公告)号:US10593614B2

    公开(公告)日:2020-03-17

    申请号:US16398022

    申请日:2019-04-29

    摘要: In an embodiment, a semiconductor device includes: a lead-frame including one or more electrically conductive areas, one or more dielectric layers over the electrically conductive area or areas, one or more electrically conductive layer over the one or more dielectric layers thus forming one or more capacitors each including the dielectric layer sandwiched between an electrically conductive area and the electrically conductive layer. The semiconductor device also includes a semiconductor die on the lead-frame electrically connected to the one or more electrically conductive layers.

    Shielded encapsulating structure and manufacturing method thereof
    20.
    发明授权
    Shielded encapsulating structure and manufacturing method thereof 有权
    屏蔽封装结构及其制造方法

    公开(公告)号:US09060227B2

    公开(公告)日:2015-06-16

    申请号:US13659753

    申请日:2012-10-24

    摘要: One or more embodiments are directed to encapsulating structure comprising: a substrate having a first surface and housing at least one conductive pad, which extends facing the first surface and is configured for being electrically coupled to a conduction terminal at a reference voltage; a cover member, set at a distance from and facing the first surface of the substrate; and housing walls, which extend between the substrate and the cover member. The substrate, the cover member, and the housing walls define a cavity, which is internal to the encapsulating structure and houses the conductive pad. Moreover present inside the cavity is at least one electrically conductive structure, which extends between, and in electrical contact with, the cover member and the conductive pad for connecting the cover member electrically to the conduction terminal.

    摘要翻译: 一个或多个实施例涉及封装结构,包括:具有第一表面并且容纳至少一个导电焊盘的衬底,所述至少一个导电焊盘面向第一表面延伸并且被配置为在参考电压下电耦合到导通端子; 盖构件,其设置在离基板的第一表面一定距离处; 以及在基板和盖构件之间延伸的壳体壁。 衬底,盖构件和壳体壁限定空腔,其在封装结构内部并容纳导电垫。 此外,在腔内部还存在至少一个导电结构,其在盖构件和导电垫之间延伸并与之电接触,用于将盖构件电连接到导电端子。