公开(公告)号：US20140276057A1

公开(公告)日：2014-09-18

申请号：US14205762

申请日：2014-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho LEE ,  Soon-jae HONG ,  Gi-hun YUN

IPC: A61B8/00

CPC classification number: A61B8/463 ,  A61B8/0858 ,  A61B8/4427 ,  A61B8/462 ,  A61B8/465 ,  A61B8/467 ,  A61B8/468 ,  A61B8/469 ,  A61B8/5223 ,  A61B8/54 ,  G01S7/52073 ,  G01S7/52074 ,  G01S7/52084 ,  G06F3/041 ,  G06F3/0488 ,  G06T7/62 ,  G06T2207/10132 ,  G06T2207/20104 ,  G06T2207/30004

Abstract: A method of providing a copy image of a portion of an ultrasound includes displaying an ultrasound image on a first area of a touch screen; receiving a touch input with respect to the ultrasound image; extracting a partial image corresponding to the touch input from the ultrasound image; and displaying a copy image of the partial image on a second area of the touch screen that is different from the first area on which the ultrasound image is displayed.

Abstract translation: 提供超声波的一部分的复印图像的方法包括在触摸屏的第一区域上显示超声波图像; 接收关于所述超声图像的触摸输入; 从所述超声图像提取与所述触摸输入对应的部分图像; 以及在与显示超声波图像的第一区域不同的触摸屏的第二区域上显示部分图像的复制图像。

公开(公告)号：US20140231752A1

公开(公告)日：2014-08-21

申请号：US14180928

申请日：2014-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin SHIN ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Seong-jun PARK ,  David SEO ,  Yun-sung WOO ,  Dong-wook LEE ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO ,  In-kyeong YOO

IPC: H01L29/16 ,  H01L33/34 ,  H01L31/028 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/786 ,  H01L29/78642 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/08 ,  H01L33/34 ,  H01L51/0046 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/428 ,  H01L51/50

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract translation: 提供了石墨烯装置和包括该石墨烯装置的电子装置。 根据示例性实施例，石墨烯装置包括晶体管，其包括源极，栅极和漏极，载流子移动的有源层以及栅极和有源层之间的石墨烯层。 石墨烯层可以被配置为既用作有源层的电极和晶体管的沟道层。

公开(公告)号：US20140141600A1

公开(公告)日：2014-05-22

申请号：US13917786

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Wook LEE ,  Hyeon-jin SHIN ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Yun-sung WOO ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract translation: 制备石墨烯的方法包括在基板上形成碳化硅薄膜，在碳化硅薄膜上形成金属薄膜，通过加热碳化硅薄膜和金属薄膜，在基板上形成金属复合层和石墨烯 电影。

公开(公告)号：US20170034403A1

公开(公告)日：2017-02-02

申请号：US14941971

申请日：2015-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo SEO ,  Jae-ho LEE ,  Do-han KIM

IPC: H04N5/14 ,  H04N5/265 ,  G06T7/20 ,  H04N5/235

CPC classification number: H04N5/145 ,  G01S3/00 ,  G01S3/7864 ,  G01S19/14 ,  G01S19/39 ,  G01S19/48 ,  G03B15/16 ,  G06F3/04842 ,  G06F3/04847 ,  G06F3/0488 ,  G06T7/20 ,  G06T7/246 ,  G06T2207/30241 ,  H04N1/00204 ,  H04N1/00307 ,  H04N1/2133 ,  H04N5/144 ,  H04N5/23216 ,  H04N5/23222 ,  H04N5/23232 ,  H04N5/23254 ,  H04N5/23293 ,  H04N5/2353 ,  H04N5/2621 ,  H04N5/265 ,  H04N2201/0094

Abstract: An imaging device configured to image a moving object includes a sensing unit configured to obtain location information of the imaging device; a processor configured to determine a moving trajectory of the moving object using the location information; an interface configured to output a first image representing the moving trajectory; and an image processor configured to generate the first image and a second image representing the moving object based on the moving trajectory.

Abstract translation: 被配置为对移动物体进行成像的成像装置包括被配置为获得成像装置的位置信息的感测单元; 处理器，被配置为使用所述位置信息来确定所述移动物体的移动轨迹; 接口，被配置为输出表示所述移动轨迹的第一图像; 以及图像处理器，被配置为基于所述移动轨迹生成所述第一图像和表示所述移动物体的第二图像。

公开(公告)号：US20150228804A1

公开(公告)日：2015-08-13

申请号：US14693680

申请日：2015-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho LEE ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Hyung-cheol SHIN ,  Jae-hong LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract translation: 根据示例性实施例，场效应晶体管包括在衬底上的石墨烯通道层。 石墨烯通道层限定狭缝。 源电极和漏极彼此间隔开并布置成向石墨烯通道层施加电压。 栅极绝缘层在石墨烯通道层和栅电极之间。

公开(公告)号：US20150214482A1

公开(公告)日：2015-07-30

申请号：US14340108

申请日：2014-07-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-hong PARK ,  Hyung-youl PARK ,  Jae-woo SHIM ,  Jae-ho LEE

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05

CPC classification number: H01L51/002 ,  H01L21/225 ,  H01L21/2253 ,  H01L21/76251 ,  H01L29/1606 ,  H01L29/24 ,  H01L51/0558

Abstract: Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.

Abstract translation: 示例实施例涉及掺杂二维半导体的方法。 该方法包括在衬底上形成半导体层，将离子注入到半导体层中，在半导体层上形成由二维半导体层或有机半导体层形成的掺杂层，并通过扩散掺杂层 半导体层通过退火衬底进入掺杂层。

公开(公告)号：US20150214304A1

公开(公告)日：2015-07-30

申请号：US14328339

申请日：2014-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-hong PARK ,  Jae-woo SHIM ,  Hyung-youl PARK ,  Jae-ho LEE

IPC: H01L29/16 ,  H01L29/78

CPC classification number: H01L29/1606 ,  H01L29/78

Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.

Abstract translation: 提供了具有可调屏障的石墨烯晶体管。 所述石墨烯晶体管包括半导体衬底，设置在所述半导体衬底上的绝缘薄膜，所述绝缘薄膜上的石墨烯层，连接到所述石墨烯层的端部的第一电极，与所述石墨烯层的另一端分离的第二电极， 所述石墨烯层与所述半导体衬底接触，覆盖所述石墨烯层的栅极绝缘层和所述栅极绝缘层上的栅电极，其中在所述半导体衬底和所述石墨烯层之间形成能量势垒。

公开(公告)号：US20150141823A1

公开(公告)日：2015-05-21

申请号：US14582415

申请日：2014-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho LEE ,  Soon-jae HONG ,  Gi-hun YUN

IPC: A61B8/00 ,  A61B8/08

Abstract: An ultrasound measurement method includes: providing a first object and a second object within an ultrasound image displayed on a touch screen; activating the first object and the second object, to be movable to perform a measurement on the ultrasound image; receiving a touch-and-drag input with respect to at least one of the first and second objects; and displacing a corresponding one of the first and second objects on the ultrasound image in correspondence with the received touch-and-drag input.

Abstract translation: 超声波测量方法包括：在触摸屏上显示的超声图像内提供第一物体和第二物体; 激活第一物体和第二物体，以便可移动以对超声图像进行测量; 接收关于所述第一和第二对象中的至少一个的触摸和拖动输入; 以及对应于所接收的触摸和拖动输入，移位超声波图像上的第一和第二对象中的对应的一个。

公开(公告)号：US20140231820A1

公开(公告)日：2014-08-21

申请号：US13960256

申请日：2013-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho LEE ,  Hyun-jong CHUNG ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Jin-seong HEO

IPC: H01L29/792 ,  G11C11/40

CPC classification number: H01L29/792 ,  B82Y10/00 ,  G11C11/40 ,  G11C16/0466 ,  H01L21/28273 ,  H01L29/1606 ,  H01L29/47 ,  H01L29/7781 ,  H01L29/788 ,  H01L51/0512 ,  Y10S977/734 ,  Y10S977/938

Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.

Abstract translation: 石墨烯存储器包括在导电半导体衬底上彼此间隔开的源极和漏极，与导电半导体衬底接触并与源极和漏极间隔开并且在源极和漏极之间以及在石墨烯层上的栅电极的石墨烯层。 在导电半导体衬底和石墨烯层之间形成肖特基势垒，使得石墨烯层用作用于存储电荷的电荷捕获层。

公开(公告)号：US20140117313A1

公开(公告)日：2014-05-01

申请号：US13964353

申请日：2013-08-12

Applicant: Seoul National University R & DB Foundation ,  Samsung Electronics Co., Ltd.

Inventor： Jae-ho LEE ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Hyung-cheol SHIN ,  Jae-hong LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.

Abstract translation: 根据示例实施例，具有可调谐屏障的石墨烯开关器件包括半导体衬底，其包括掺杂有杂质的第一阱，在半导体衬底的第一区域上的第一电极，在半导体衬底的第二区域上的绝缘层 在所述绝缘层上的石墨烯层，并且朝向所述第一电极延伸到所述半导体衬底上，所述石墨烯层和绝缘层上的第二电极，所述石墨烯层上的栅极绝缘层和所述栅极绝缘层上的栅极电极。 半导体衬底的第一区域和第二区域可以彼此间隔开。 石墨烯层与第一电极间隔开。 石墨烯层的下部可以接触第一孔。 第一阱被配置为在石墨烯层和第一电极之间形成能量势垒。