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11.发明申请公开(公告)号：US20230074316A1
公开(公告)日：2023-03-09
申请号：US17826796
申请日：2022-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Soeun Shin , Minah Kim , Jin Choi
Abstract: Methods of fabricating lithographic masks include performing mask process correction (MPC) on a mask tape out (MTO) design layout. Performing MPC may include identifying a plurality of unit cells (each being iterated in the MTO design layout and including a plurality of curve patterns), and performing model-based MPC on at least one of the plurality of unit cells. These methods may further include performing electron beam exposure based on the MTO design layout on which the MPC is performed. The performing model-based MPC on at least one of the plurality of unit cells may be based on at least one of an aspect ratio, sizes, curvatures of curved edges, density, and a duty of the plurality of curve patterns.
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公开(公告)号：US10366246B2
公开(公告)日：2019-07-30
申请号：US15403267
申请日：2017-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungryol Lee , Byeong-Cheol Gil , Dae-Hui Kim , Hakjoo Kim , Sangho Park , Yong-Jun Park , Jong-Cheul Park , Gwiho Lee , Ho-Dong Jwa , Wooyoung Choi , Jin Choi
IPC: G06F21/60 , G06F21/62 , G06F3/0484
Abstract: An electronic device and an method of operating an electronic device according to various example embodiments include: acquiring one of a plurality of pieces of identification information which are already registered; setting one of a plurality of function sets which are already registered based on the acquired identification information; and allowing access based on the set function set.
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公开(公告)号：US09709893B2
公开(公告)日：2017-07-18
申请号：US14990818
申请日：2016-01-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sook Hyun Lee , Shuichi Tamamushi , So-Eun Shin , Inkyun Shin , Jin Choi
Abstract: An exposure method includes designing a target pattern to be formed on a substrate, producing a first dose map having first dose values of beams of energy, e.g., electron beams, creating from the first dose map a second dose map having second dose values different from the first dose values, and irradiating regions of a layer of photoresist on the substrate with overlapping beams to expose the regions to doses of energy having values based on the second dose values. The photoresist layer may then be developed and used an etch mask. The etch mask may be used to etch a mask layer on a transparent substrate to form a reticle.
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14.发明授权Electron beam exposure system and methods of performing exposing and patterning processes using the same 有权电子束曝光系统及使用其进行曝光和图案化处理的方法公开(公告)号：US09588415B2
公开(公告)日：2017-03-07
申请号：US14590145
申请日：2015-01-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sukjong Bae , Jin Choi , Sunghoon Park
CPC classification number: G03F1/56 , G03F1/70 , G03F7/2063 , H01J37/3045 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
Abstract: An exposure system includes a data processing part that forms an exposure layout and an exposure part that irradiates an electron beam at a photoresist layer according to the exposure layout. The data processing part generates a control parameter for driving the exposure part without a pattern position error and a beam drift error and to prevent a discrepancy between the exposure layout and a mask layout to be formed in the photoresist layer. A controlling part controls the exposure part according to the control parameter.
Abstract translation: 曝光系统包括形成曝光布局的数据处理部分和根据曝光布局在光致抗蚀剂层处照射电子束的曝光部分。 数据处理部分产生用于驱动曝光部分的控制参数，而没有图案位置误差和光束偏移误差，并且防止在光致抗蚀剂层中形成曝光布局和掩模布局之间的差异。 控制部根据控制参数控制曝光部。
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Patent Agency Ranking
15.发明授权Exposure method using control of settling times and methods of manufacturing integrated circuit devices by using the same 有权使用沉淀时间的控制的曝光方法和使用该方法制造集成电路器件的方法公开(公告)号：US09583305B2
公开(公告)日：2017-02-28
申请号：US14632767
申请日：2015-02-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong-Seok Jung , Shuichi Tamamushi , In-Hwan Noh , In-Kyun Shin , Sang-Hee Lee , Jin Choi
IPC: H01J37/147 , H01J37/317 , H01J37/30
CPC classification number: H01J37/1472 , H01J37/3005 , H01J37/3174 , H01J2237/063 , H01J2237/15
Abstract: An exposure method may include: radiating a charged particle beam in an exposure system comprising a beam generator, radiating the beam, and main and auxiliary deflectors deflecting the beam to determine a position of a beam shot; determining whether a deflection distance from a first position of a latest radiated beam shot to a second position of a subsequent beam shot is within a first distance in a main field area of an exposure target area, the main field area having a size determined by the main deflector; setting a settling time according to the deflection distance so that a settling time of the subsequent beam shot is set to a constant minimum value, greater than zero, when the deflection distance from the first position to the second position is within the first distance; and deflecting the beam using the main deflector based on the set settling time.
Abstract translation: 曝光方法可以包括：在包括光束发生器，辐射光束以及偏转光束的主和辅助偏转器的曝光系统中辐射带电粒子束以确定射束的位置; 确定从最近发射光束的第一位置到随后的射束射击的第二位置的偏转距离是否在曝光目标区域的主场区域内的第一距离内，所述主场区域具有由 主导流板 根据所述偏转距离设定建立时间，使得当从所述第一位置到所述第二位置的偏转距离在所述第一距离内时，所述后续射束的建立时间被设定为大于零的恒定最小值; 并且基于设定的建立时间使用主偏转器偏转光束。
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公开(公告)号：US09276058B2
公开(公告)日：2016-03-01
申请号：US14732260
申请日：2015-06-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-Ho Lee , Jin Choi , Yong-Ho Yoo , Jong-Hyuk Kang , Hyun-Joo Cha , Hee-Dong Park , Tae-Jung Park
IPC: H01L27/108 , H01L49/02
CPC classification number: H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/60
Abstract: A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.
Abstract translation: 半导体器件包括在基片上的多个下电极，其中每个下电极从衬底沿高度方向延伸并且包括侧壁，下电极在第一方向和第二方向彼此间隔开， 与下电极的侧壁接触的多个第一支撑层图案，第一支撑层图案沿着第一方向在第二方向上相邻的下电极之间延伸;多个第二支撑层图案，其与下部电极的侧壁接触; 电极，所述第二支撑层图案沿着所述第二方向在与所述第一方向相邻的所述下电极中的所述第二方向延伸，所述多个第二支撑层图案在所述高度方向上与所述多个第一支撑层图案间隔开。
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17.发明申请公开(公告)号：US20150355547A1
公开(公告)日：2015-12-10
申请号：US14590145
申请日：2015-01-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sukjong Bae , Jin Choi , Sunghoon Park
IPC: G03F7/20
CPC classification number: G03F1/56 , G03F1/70 , G03F7/2063 , H01J37/3045 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
Abstract: Provided are an exposure system and methods of performing exposing and patterning processes using the same. The exposure system may include a data processing part that forms an exposure layout; and an exposure part that irradiates an electron beam at a photoresist layer according to the exposure layout. The data processing part is constructed and arranged to generate a control parameter for driving the exposure part without a pattern position error and a beam drift error and to prevent a discrepancy between the exposure layout and a mask layout to be formed in the photoresist layer. The exposure system further includes a controlling part that controls the exposure part according to the control parameter.
Abstract translation: 提供一种曝光系统和使用其的曝光和图案化处理的方法。 曝光系统可以包括形成曝光布局的数据处理部分; 以及根据曝光布局在光致抗蚀剂层照射电子束的曝光部。 数据处理部分被构造和布置成产生用于驱动曝光部分的控制参数，而没有图案位置误差和光束偏移误差，并且防止在光致抗蚀剂层中形成曝光布局和掩模布局之间的差异。 曝光系统还包括根据控制参数控制曝光部分的控制部分。
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18.发明申请METHODS OF PROVIDING PHOTOLITHOGRAPHY PATTERNS USING FEATURE PARAMETERS, SYSTEMS AND COMPUTER PROGRAM PRODUCTS IMPLEMENTING THE SAME 审中-公开使用特征参数，系统和实现其的计算机程序产品提供光刻图案的方法公开(公告)号：US20150220679A1
公开(公告)日：2015-08-06
申请号：US14679710
申请日：2015-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Choi , Heung-suk Oh , Sin-jeung Park , Rae-won Yi
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/00 , G03F7/70433 , G03F7/70558 , H01L21/027 , H01L21/308
Abstract: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter, A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.
Abstract translation: 可以通过基于与特征参数的预定识别阈值进行比较的特征参数来识别光刻图案中包括的多个特征中的至少一个弱特征来提供提供光刻图案的方法。第一区域 的弱特征可以分类为第一剂量区域，弱特征的第二区域可以分类为第二剂量区域。 还公开了相关方法和装置。
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19.发明申请Methods of Reducing Registration Errors of Photomasks and Photomasks Formed Using the Methods 有权使用方法减少光掩模和光掩模的注册错误的方法公开(公告)号：US20150050584A1
公开(公告)日：2015-02-19
申请号：US14319281
申请日：2014-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Choi , Sukjong Bae , Inkyun Shin , Jeonghyeon Lee
Abstract: Methods of reducing registration errors of photomasks and photomasks formed using the methods are provided. The method may include forming a plurality of photomask patterns on a substrate and determining registration errors of the plurality of photomask patterns. The method may further include forming a plurality of stress-producing portions in the substrate to reduce the registration errors by considering exposure latitude variations.
Abstract translation: 提供了减少使用这些方法形成的光掩模和光掩模的配准误差的方法。 该方法可以包括在衬底上形成多个光掩模图案并确定多个光掩模图案的配准误差。 该方法还可以包括在衬底中形成多个应力产生部分，以通过考虑曝光宽容度变化来减小配准误差。
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