公开(公告)号：US10361248B2

公开(公告)日：2019-07-23

申请号：US15352933

申请日：2016-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Sub Lee ,  Han Kyu Seong ,  Yong Il Kim ,  Jung Sub Kim ,  Seul Gee Lee

IPC: H01L25/16 ,  H01L27/15 ,  H01L33/00 ,  H01L33/44 ,  H01L33/50 ,  H05B33/08 ,  H05B37/02 ,  H01L25/075

Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

公开(公告)号：US09748438B2

公开(公告)日：2017-08-29

申请号：US15190406

申请日：2016-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Sub Kim ,  Yeon Woo Seo ,  Dong Gun Lee ,  Byung Kyu Chung ,  Dae Myung Chun ,  Soo Jeong Choi

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/52 ,  B82Y20/00

CPC classification number: H01L33/007 ,  B82Y20/00 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

公开(公告)号：US12090642B2

公开(公告)日：2024-09-17

申请号：US17002008

申请日：2020-08-25

Applicant: SEMES CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang Bu Jeong ,  Jong Sung Park ,  Jung Sub Kim ,  Young Gun Park ,  Dae Seok Choi ,  Sang Hoon Jung ,  Min Gu Lee ,  Eui Sun Choi ,  Kang San Lee ,  Dae Ho Min ,  Seung Dae Seok

IPC: B25J15/06 ,  B65G47/91

CPC classification number: B25J15/0616 ,  B65G47/911 ,  B65G2249/045

Abstract: Provided are a die pickup module and a die bonding apparatus including the same. The die pickup module includes a wafer stage for supporting a wafer including dies attached on a dicing tape, a die ejector arranged under the dicing tape and for separating a die to be picked up from the dicing tape, a non-contact picker for picking up the die in a non-contact manner so as not to contact a front surface of the die, a vertical driving unit for moving the non-contact picker in a vertical direction to pick up the die and an inverting driving unit for inverting the non-contact picker to invert a die picked up by the non-contact picker.

公开(公告)号：US09978907B2

公开(公告)日：2018-05-22

申请号：US15147039

申请日：2016-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Sub Kim ,  Dong Hyun Lee ,  Jin Sub Lee ,  Kyung Wook Hwang ,  In Su Shin ,  Eui Joon Yoon ,  Gun Do Lee ,  Jeong Hwan Jang

IPC: H01L33/08 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≤x+y≤1, 0≤y

公开(公告)号：US09508898B2

公开(公告)日：2016-11-29

申请号：US14838322

申请日：2015-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Kyu Chung ,  Jung Sub Kim ,  Soo Jeong Choi ,  Yeon Woo Seo ,  Dong Gun Lee

IPC: H01L29/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/12 ,  H01L33/18 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/18 ,  H01L33/32 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.

Abstract translation: 提供一种纳米结构半导体发光器件，包括：由第一导电型氮化物半导体形成的基极层; 以及多个发光纳米结构，其设置成在所述基底层上彼此间隔开，其中所述多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔; 应力控制层，设置在所述纳米孔的表面上，并且包括含有铟的氮化物半导体; 设置在应力控制层上的有源层; 设置在有源层上的第二导电型氮化物半导体层; 以及缺陷阻挡层，其设置在所述应力控制层的至少一部分上，并且包括具有低于所述应力控制层的晶格常数的晶格常数的氮化物半导体层。

公开(公告)号：US09461199B2

公开(公告)日：2016-10-04

申请号：US14752814

申请日：2015-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hyeok Heo ,  Jung Sub Kim ,  Young Jin Choi ,  Jin Sub Lee ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun

IPC: H01L31/00 ,  H01L33/06 ,  H01L27/15 ,  H01L33/32 ,  H01L33/62 ,  H01L33/24 ,  H01L33/00 ,  H05B33/08

CPC classification number: H01L33/06 ,  H01L27/153 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05B33/0803 ,  H01L2924/00014

Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.

Abstract translation: 提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构， 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。 纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。