公开(公告)号：US09230922B2

公开(公告)日：2016-01-05

申请号：US14180907

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jin Lim ,  Bong-Hyun Kim ,  Seok-Woo Nam ,  Dong-Woon Shin ,  In-Sang Jeon ,  Soo-Jin Hong

IPC: H01L21/31 ,  H01L23/00 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L23/564 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L23/562 ,  H01L29/165 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3): HxSiAy(NR1R2)4-x-y  (1) HxSi(NAR3)4-x  (2) HxSi(R4)z(R5)4-x-z  (3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen.

Abstract translation: 一种用于在基底上形成二氧化硅膜的前体组合物，所述前体组合物包含至少一种由以下化学式（1），（2）和（3）表示的前体化合物：HxSiAy（NR1R2）4-xy（1 ）其中独立地在化学式（1），（2）和（3）中，H是氢，x，x，x，x，y， 为0〜3，Si为硅，A为卤素，y为1〜4，N为氮，R1，R2，R3，R5各自独立地选自H，芳基，全卤代芳基，C1-8 烷基和C 1-8全卤代烷基，R 4是其中至少一个氢被卤素取代的芳基或其中至少一个氢被卤素取代的C 1-8烷基。

公开(公告)号：US20180197719A1

公开(公告)日：2018-07-12

申请号：US15606025

申请日：2017-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yil-Hyung Lee ,  Yoo-Chul Kong ,  Jong-Kyu Kim ,  Seok-Woo Nam ,  Jong-Soon Park ,  Kyoung-Sub Shin

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C14/50

CPC classification number: H01J37/32412 ,  H01J37/32422 ,  H01J37/3435 ,  H01J37/3438 ,  H01J2237/083 ,  H01J2237/334

Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

公开(公告)号：US09595612B2

公开(公告)日：2017-03-14

申请号：US15006522

申请日：2016-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/28 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

Abstract translation: 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。

公开(公告)号：US09184232B2

公开(公告)日：2015-11-10

申请号：US14538046

申请日：2014-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC: H01L29/06 ,  H01L21/28 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

公开(公告)号：US20150124521A1

公开(公告)日：2015-05-07

申请号：US14297220

申请日：2014-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Jin Lim ,  Won-Seok Yoo ,  Seok-Woo Nam

IPC: H01L27/108 ,  G11C11/4063

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括由形成在单元区域中的器件隔离层限定的有源区，在有源区中包括掩埋栅的晶体管，形成在位于掩埋栅的一侧的有源区上的金属接触， 在金属接触件上，在着陆焊盘上形成电连接到有源区的电容器，以及在金属触点和有源区之间的金属氧化物层。

公开(公告)号：US20130320461A1

公开(公告)日：2013-12-05

申请号：US13960434

申请日：2013-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG-HWAN KIM ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC: H01L29/78

CPC classification number: H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.