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公开(公告)号：US09534839B2
公开(公告)日：2017-01-03
申请号：US13707253
申请日：2012-12-06
发明人： Hyosan Lee , Yongsun Ko , Kyongseob Kim , Kwangsu Kim , SeokHoon Kim , Kuntack Lee , Yongmyung Jun , Yong-Jhin Cho
CPC分类号： H01L21/67034 , F26B5/04 , H01L21/02052 , H01L21/67051 , H01L21/6715
摘要： A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.
摘要翻译： 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。
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12.发明授权公开(公告)号：US10084051B2
公开(公告)日：2018-09-25
申请号：US15133424
申请日：2016-04-20
发明人： Sangjine Park , Jae-Hwan Lee , Yongsun Ko
IPC分类号： H01L29/78 , H01L29/423 , H01L29/06 , H01L29/08 , H01L29/66
CPC分类号： H01L29/42356 , H01L29/0649 , H01L29/0847 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A semiconductor device includes a fin structure on a substrate, device isolation patterns on the substrate at opposite sides of the fin structure, a gate electrode intersecting the fin structure and the device isolation patterns, a gate dielectric pattern between the gate electrode and the fin structure and between the gate electrode and the device isolation patterns, and gate spacers on opposite sidewalls of the gate electrode, wherein, on each of the device isolation patterns, a bottom surface of the gate dielectric pattern is at a higher level than bottom surfaces of the gate spacers.
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13.发明授权Apparatus and methods for manufacturing semiconductor devices and treating substrates 有权用于制造半导体器件和处理衬底的装置和方法公开(公告)号：US09595434B2
公开(公告)日：2017-03-14
申请号：US14704912
申请日：2015-05-05
发明人： Kyoungseob Kim , Yongsun Ko , Kyoung Hwan Kim , SeokHoon Kim , Kuntack Lee , Hyosan Lee
CPC分类号： H01L21/02068 , H01L21/67051 , H01L21/78
摘要： A method of manufacturing a semiconductor device includes: forming a pattern on a surface of a semiconductor substrate; placing the substrate on a platform of a substrate treatment apparatus; rotating the wafer while applying a cleaning liquid from a first nozzle and a wetting liquid from a second nozzle to treat a first region on the surface of the substrate; vertically changing the distance of the second nozzle together with the first nozzle with respect to the platform; after the vertical change, rotating the wafer while applying the cleaning liquid from the first nozzle and the wetting liquid from the second nozzle to treat a second region on the surface of the substrate; and forming a semiconductor device from the treated substrate.
摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底的表面上形成图案; 将基板放置在基板处理装置的平台上; 在从第一喷嘴施加清洁液体和来自第二喷嘴的润湿液体的同时旋转晶片以处理基板表面上的第一区域; 与第一喷嘴相对于平台垂直地改变第二喷嘴的距离; 在垂直变化之后，在从第一喷嘴施加清洁液体和来自第二喷嘴的润湿液体的同时转动晶片以处理基板表面上的第二区域; 以及从处理过的衬底形成半导体器件。
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公开(公告)号：US20130145640A1
公开(公告)日：2013-06-13
申请号：US13707253
申请日：2012-12-06
发明人： Hyosan Lee , Yongsun Ko , Kyongseob Kim , Kwangsu Kim , SeokHoon Kim , Kuntack Lee , Yongmyung Jun , Yong-Jhin Cho
IPC分类号： F26B5/04
CPC分类号： H01L21/67034 , F26B5/04 , H01L21/02052 , H01L21/67051 , H01L21/6715
摘要： A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.
摘要翻译： 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。
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15.发明授权公开(公告)号：US11527399B2
公开(公告)日：2022-12-13
申请号：US16744667
申请日：2020-01-16
发明人： Byungkwon Cho , Sangjine Park , Yongsun Ko , Seulgee Jeon , Jihoon Jeong , Seongsik Hong
摘要： Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.
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公开(公告)号：US11302526B2
公开(公告)日：2022-04-12
申请号：US16561078
申请日：2019-09-05
发明人： Sangjine Park , Byung-Kwon Cho , Jihoon Jeong , Youngtak Kim , Yongsun Ko , Seulgee Jeon
摘要： A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.
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公开(公告)号：US10096453B2
公开(公告)日：2018-10-09
申请号：US15133989
申请日：2016-04-20
发明人： Kijong Park , Jun-Youl Yang , Yongsun Ko , Kyunghyun Kim , Taeheon Kim , Jae Jin Shin
IPC分类号： H01J37/32
摘要： A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
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公开(公告)号：US20180102235A1
公开(公告)日：2018-04-12
申请号：US15841230
申请日：2017-12-13
发明人： Kijong Park , Jun-Youl Yang , Yongsun Ko , Kyunghyun Kim , Taeheon Kim , Jae Jin Shin
IPC分类号： H01J37/32
CPC分类号： H01J37/32009 , H01J37/32449 , H01J37/32899 , H01J37/32926 , H01J37/32935 , H01J37/3299 , H01J2237/334
摘要： A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
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公开(公告)号：US09677002B2
公开(公告)日：2017-06-13
申请号：US14879835
申请日：2015-10-09
发明人： Sang Won Bae , Yongsun Ko , Byoungho Kwon , Bo yun Kim , Hongjin Kim , Sungoh Park , Kuntack Lee , Hyosan Lee , Sol Han
IPC分类号： C09K13/06 , C23F1/26 , H01L21/768 , H01L21/02 , H01L21/3213
CPC分类号： C09K13/06 , C23F1/26 , H01L21/02074 , H01L21/32134 , H01L21/76865 , H01L21/76883
摘要： An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.
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公开(公告)号：US20170154991A1
公开(公告)日：2017-06-01
申请号：US15245549
申请日：2016-08-24
发明人： Yongsun Ko , Sangjine PARK , Hagju CHO , Byungjae PARK , Jeongnam HAN
IPC分类号： H01L29/78 , H01L29/423 , H01L29/06
CPC分类号： H01L29/785 , H01L21/823821 , H01L29/0649 , H01L29/42372 , H01L29/66545 , H01L29/66795 , H01L29/7848
摘要： A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.
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