公开(公告)号：US20080164467A1

公开(公告)日：2008-07-10

申请号：US12025044

申请日：2008-02-03

申请人： Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio

发明人： Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0083 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

摘要翻译： 提供一种能够制造高质量的半导体发光器件的半导体发光器件制造方法。 制备n型ZnO衬底的第一衬底。 在第一基板上形成包括由ZnO基化合物半导体构成的发光层的层叠结构。 p层导电层形成在层压结构上。 在p侧导电层上形成由共晶材料制成的第一共晶材料层。 在第二基板上形成由共晶材料制成的第二共晶材料层。 第一和第二共晶材料层共晶接合以耦合第一和第二基板。 在第一衬底任选变薄之后，在第一衬底的部分表面上形成n侧电极。

公开(公告)号：US08436351B2

公开(公告)日：2013-05-07

申请号：US12969304

申请日：2010-12-15

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

IPC分类号： H01L33/28

CPC分类号： H01L33/285

摘要： A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

摘要翻译： 含ZnO的半导体层含有添加到ZnO中的Se，并且具有紫外光的发射峰值波长和视觉光的发射峰值波长。 通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

公开(公告)号：US08043879B2

公开(公告)日：2011-10-25

申请号：US12904063

申请日：2010-10-13

申请人： Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio

发明人： Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/0083 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

摘要翻译： 提供一种能够制造高质量的半导体发光器件的半导体发光器件制造方法。 制备n型ZnO衬底的第一衬底。 在第一基板上形成包括由ZnO基化合物半导体构成的发光层的层叠结构。 p层导电层形成在层压结构上。 在p侧导电层上形成由共晶材料制成的第一共晶材料层。 在第二基板上形成由共晶材料制成的第二共晶材料层。 第一和第二共晶材料层共晶接合以耦合第一和第二基板。 在第一衬底任选变薄之后，在第一衬底的部分表面上形成n侧电极。

公开(公告)号：US08124969B2

公开(公告)日：2012-02-28

申请号：US12428768

申请日：2009-04-23

申请人： Naochika Horio

发明人： Naochika Horio

IPC分类号： H01L33/00

CPC分类号： H01L33/28 ,  H01L33/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48257 ,  H01L2924/00014 ,  H01L2924/00

摘要： A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 μm and is surrounded by two parallel first side edges forming an angle in a range of 52.7° to 54.7° with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7° to 54.7° with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves.

摘要翻译： ZnO类半导体发光元件包括形成在主面位于A面{11-20}的矩形蓝宝石A面基板上的ZnO系半导体层。 基板的厚度为50〜200μm，由相对于与c轴正交的m轴形成52.7〜54.7°的角度的两个平行的第一侧边缘包围，并且两个平行的第二侧边缘 与第一侧边缘正交。 发光元件通过以下方式获得：在与形成有ZnO基半导体层的表面相对的蓝宝石A平面基板的表面上形成第一划线槽，其形成在52.7°至54.7°的范围内的角度 相对于与第一划线槽正交的m轴和第二划线槽; 以及沿着第一划线凹槽然后沿着第二划线槽破坏基板。

公开(公告)号：US20100258796A1

公开(公告)日：2010-10-14

申请号：US12756328

申请日：2010-04-08

申请人： Naochika Horio ,  Mitsuyasu Kumagai

发明人： Naochika Horio ,  Mitsuyasu Kumagai

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L33/28 ,  H01L33/0083

摘要： Disclosed is a method of manufacturing a ZnO-based semiconductor device, the method includes a first metal layer formation step of forming a first metal layer on a p-type ZnO-based semiconductor layer in island-form and/or mesh-form; a heat treatment step of performing heat treatment of the first metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer comprising elements of the p-type ZnO-based semiconductor layer and the first metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the first metal layer; and a second metal layer formation step of forming a second metal layer so as to cover the first metal layer and the exposed portions of the p-type ZnO-based semiconductor layer through openings of the first metal layer.

摘要翻译： 公开了一种制造ZnO类半导体器件的方法，该方法包括：以岛状和/或网状形式在p型ZnO基半导体层上形成第一金属层的第一金属层形成步骤; 在无氧气氛下进行第一金属层和p型ZnO系半导体层的热处理的热处理工序，形成包含p型ZnO类半导体层和第一金属的元素的混合层 层，同时在第一金属层的表面上保持金属相层; 以及第二金属层形成步骤，通过第一金属层的开口形成第二金属层以覆盖p型ZnO基半导体层的第一金属层和暴露部分。

公开(公告)号：US20100064966A1

公开(公告)日：2010-03-18

申请号：US12561150

申请日：2009-09-16

申请人： Naochika Horio ,  Masayuki Makishima

发明人： Naochika Horio ,  Masayuki Makishima

IPC分类号： C30B25/00

CPC分类号： C30B29/16 ,  C30B25/02

摘要： A method includes the steps of, using water vapor and a metalorganic compound not containing oxygen, (a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer; and (b) performing crystal growth at a high growth temperature and at a pressure higher than the low growth pressure to form a high-temperature grown single-crystal layer on the low-temperature grown single-crystal layer.

摘要翻译： 一种方法包括以下步骤：使用水蒸汽和不含氧的金属有机化合物，（a）在低生长温度和低生长压力下在1kPa至30kPa的范围内进行晶体生长以形成低温 生长单晶层; 和（b）在高生长温度和高于低生长压力的压力下进行晶体生长，以在低温生长的单晶层上形成高温生长的单晶层。

公开(公告)号：US20080145961A1

公开(公告)日：2008-06-19

申请号：US12031068

申请日：2008-02-14

申请人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

发明人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2933/0016

摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.

摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

公开(公告)号：US07285858B2

公开(公告)日：2007-10-23

申请号：US10962109

申请日：2004-10-07

申请人： Masahiko Tsuchiya ,  Naochika Horio

发明人： Masahiko Tsuchiya ,  Naochika Horio

IPC分类号： H01L23/48

CPC分类号： H01L24/81 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3157 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/02166 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10156 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/16111 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12035 ,  H01L2924/19041 ,  H01L2924/3841 ,  H05K3/28 ,  H05K3/4007 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2224/9211 ,  H01L2224/81 ,  H01L2224/83

摘要： A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

摘要翻译： 衬底的相对表面面向半导体元件的第一表面。 延伸层在衬底上形成在半导体元件上面向电极的位置上。 堤防薄膜设置在相对表面和第一表面中的一个上。 开放通过堤防形成。 填充但未完全填充在开口中的连接构件连接电极和延伸层。

公开(公告)号：US20110062452A1

公开(公告)日：2011-03-17

申请号：US12882430

申请日：2010-09-15

申请人： Chizu KYOTANI ,  Naochika Horio

发明人： Chizu KYOTANI ,  Naochika Horio

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0083 ,  H01L33/0095

摘要： The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of MgxZn1-xO (0≦x≦0.68); a step for forming microcracks in a second principal face of the substrate so as to extend toward an interior of the substrate; a step for carrying out a heat treatment at a temperature of 100° C. or higher; and a step for forming an electrode by depositing a metal material composed of one among Al, a Ga alloy, and an In alloy on the second principal face of the substrate, and forming an electrode in a heat treatment at a temperature of 300° C. to 1000° C. are provided.

摘要翻译： 在氧化锌系半导体发光元件中，生长基板与形成在其上的电极之间的欧姆接触得到改善，从而提高了发光效率和可靠性。形成n型半导体层，发光 层和p型半导体层，其顺序地在具有Mg x Zn 1-x O（0＆amp; nlE; x＆amp; lE; 0.68）的组成的衬底的第一主面上; 在衬底的第二主面中形成微裂纹以朝向衬底的内部延伸的步骤; 在100℃以上的温度进行热处理的工序; 以及通过在基板的第二主面上沉积由Al，Ga合金和In合金中的一种构成的金属材料形成电极的步骤，并且在300℃的温度下进行热处理中形成电极 提供至1000℃。

公开(公告)号：US07691203B2

公开(公告)日：2010-04-06

申请号：US11341093

申请日：2006-01-27

申请人： Toru Inagaki ,  Takahiro Shirahata ,  Takashi Yokoyama ,  Michihiro Sano ,  Naochika Horio

发明人： Toru Inagaki ,  Takahiro Shirahata ,  Takashi Yokoyama ,  Michihiro Sano ,  Naochika Horio

IPC分类号： C23C16/22 ,  H01L21/36 ,  C23C16/00

CPC分类号： C23C16/45514 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/4584 ,  C30B25/14 ,  C30B29/16

摘要： A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b. The apparatus further has first supply ports 11 and second supply ports 12, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply ports 11 and 12 are positioned outside the exhaust duct 7. This enables the source gases to react immediately near the substrate 5 so that high-quality crystal film formation can be performed on the substrate.

摘要翻译： 提供了一种成膜装置，其可以在到达装置内被处理的基板之前防止源气体一起反应，从而最小化来自基板的辐射热的影响，并使反应室中的气体行为更好地用于晶体膜形成。 该装置通过使第一源气体和第二源气体一起反应而在加热的基板5的表面上形成膜。 该装置具有处理室1，其中放置有基板5。 处理室1至少由基板5分成加热室1a和反应室1b，使得基板表面能够暴露于反应室1b中的源气体。 该装置还具有排气管7，排气可以排出。 排气管7面对暴露的基板表面并与反应室1b连接。 该装置还具有第一供应端口11和第二供应端口12，第一和第二源气体可以分别通过第一供应端口11和第二供应端口12独立地供应到基板表面上。 供给口11和12位于排气管7的外部。这使得源气体能够在基板5附近立即反应，从而可以在基板上进行高质量的晶体成膜。