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公开(公告)号：US20150262606A1
公开(公告)日：2015-09-17
申请号：US14728908
申请日：2015-06-02
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , XiaoMin Yang , ZhaoNing Yu , Yautzong Hsu
CPC classification number: G11B5/855 , G03F7/0002 , G11B5/746 , H01L21/00 , H01L21/302 , Y10T428/24802 , Y10T428/24926
Abstract: Provided herein are apparatuses and methods, including patterning a first set of features in a servo zone to form a patterned servo zone while a first mask protects a data zone from the patterning. The first mask may be removed from the data zone. The apparatuses and methods may further include patterning a second set of features in the data zone to form a patterned data zone while a second mask protects the patterned servo zone from the patterning.
Abstract translation: 本文提供了装置和方法，包括在伺服区中图形化第一组特征以形成图案化的伺服区，而第一掩模保护数据区免受图案化。 可以从数据区域中删除第一个掩码。 装置和方法还可以包括在数据区中图形化第二组特征以形成图案化数据区，而第二掩模保护图案化的伺服区免受图案化。
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12.发明申请Chemical Pinning to Direct Addressable Array Using Self-Assembling Materials 有权使用自组装材料进行直接寻址阵列的化学定位公开(公告)号：US20150206549A1
公开(公告)日：2015-07-23
申请号：US14673471
申请日：2015-03-30
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , XiaoMin Yang
CPC classification number: G11B5/84 , B05D1/322 , B05D3/00 , B05D3/06 , B05D5/00 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , G03F7/0002 , G11B5/59633 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855 , Y10T428/24802
Abstract: A substrate having an arrangement of self-assembling magnetic domains and a method of fabrication therefor. In some embodiments, a substrate is patterned with a plurality of chemically contrasted alignment features, and a block copolymer having a magnetic component and a non-magnetic component is deposited onto the substrate. The block copolymer self-assembles into a sequence of magnetic domains responsive to the alignment features. The period of the alignment features is between about 2 times and about 10 times the period of the magnetic domains.
Abstract translation: 具有自组装磁畴布置的基板及其制造方法。 在一些实施例中，用多个化学对比的对准特征图案化基底，并且将具有磁性成分和非磁性成分的嵌段共聚物沉积在基底上。 嵌段共聚物自组装成响应于对准特征的一系列磁畴。 对准特征的周期是磁畴周期的约2倍至约10倍。
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13.发明申请BIT PATTERNED MEDIA TEMPLATE INCLUDING ALIGNMENT MARK AND METHOD OF USING SAME 有权位图形媒体模板，包括对齐标记及其使用方法公开(公告)号：US20150116690A1
公开(公告)日：2015-04-30
申请号：US14068050
申请日：2013-10-31
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： HongYing Wang , Kim Y Lee , Yautzong Hsu , Nobuo Kurataka , Gennady Gauzner , Shuaigang Xiao
CPC classification number: G03F7/70141 , G03F7/0002 , G03F9/7042 , G03F9/7076 , G11B5/855
Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
Abstract translation: 公开了一种方法，其包括在衬底中形成至少一个衬底对准标记和至少一个光刻对准标记; 在所述基板上形成种子层; 以及在所述种子层中形成引导图案和至少一个引导图案对准标记，其中所述至少一个引导图案对准标记形成在所述至少一个基板对准标记上。 所述方法还包括确定所述至少一个引导图案对准标记相对于所述至少一个基板对准标记的对准误差; 以及在所述基板的至少一个区域上构图特征，其中所述特征基于所述至少一个光刻对准标记和所述对准误差位于所述基板上。
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公开(公告)号：US20150017481A1
公开(公告)日：2015-01-15
申请号：US14308632
申请日：2014-06-18
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Thomas P. Nolan , Kim Y. Lee , Shuaigang Xiao , Tom Chang , Yingguo Peng
CPC classification number: G11B5/855
Abstract: The embodiments disclose a structure, including a first layer selectively etched on a substrate with a seedlayer deposited thereon, a first layer bit patterned growth guiding mechanism on the seedlayer, and a plurality of bit patterned magnetic recording features grown on the seedlayer guided by the growth guiding mechanism.
Abstract translation: 实施方案公开了一种结构，其包括在其上沉积有籽晶层的基板上选择性地蚀刻的第一层，种子层上的第一层位图案生长引导机构以及由生长引导的种子上生长的多个位图案化磁记录特征 指导机制。
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公开(公告)号：US20240185885A1
公开(公告)日：2024-06-06
申请号：US18516140
申请日：2023-11-21
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , Thomas Chang , Kim Yang Lee , XiaoMin Yang , Jiansheng Wu
Abstract: A method of forming patterned magnetic media disclosed herein includes patterning a guiding layer on a substrate to form a nucleation guiding pattern. A layer of magnetic material is formed over the nucleation guiding pattern. The magnetic material may comprise a non-magnetic segregant. Magnetic grains are grown in a down-track direction and in a cross-track direction responsive to the nucleation guiding pattern and the non-magnetic segregant forms grain boundaries between the magnetic grains.
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Patent Agency Ranking
公开(公告)号：US10151978B2
公开(公告)日：2018-12-11
申请号：US15517505
申请日：2014-11-18
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Shuaigang Xiao , Kim Y. Lee , David S. Kuo
IPC: G03F7/11 , G03F7/40 , H01L21/027 , G03F7/16 , C08L53/00 , B81C1/00 , G03F7/00 , G03F7/09 , G03F7/20
Abstract: Provided herein is a method, including creating a first layer over a substrate, wherein the first layer is configured for directed self-assembly of a block copolymer thereover; creating a continuous second layer over the first layer by directed self-assembly of a block copolymer, wherein the second layer is also configured for directed self-assembly of a block copolymer thereover; and creating a third layer over the continuous second layer by directed self-assembly of a block copolymer. Also provided is an apparatus, comprising a continuous first layer comprising a thin film of a first, phase-separated block copolymer, wherein the first layer comprises a first chemoepitaxial template configured for directed self-assembly of a block copolymer thereon; and a second layer on the first layer, wherein the second layer comprises a thin film of a second, phase-separated block copolymer.
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公开(公告)号：US09934806B2
公开(公告)日：2018-04-03
申请号：US15403040
申请日：2017-01-10
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , David S. Kuo , XiaoMin Yang , Kim Y. Lee , Yautzong Hsu , Koichi Wago
CPC classification number: G11B5/59638 , G11B5/59655 , G11B5/746 , G11B5/84 , G11B5/855 , G11B20/1217 , G11B2020/1281
Abstract: Provided herein is a method, including creating a first pattern in a data region of a substrate, and creating a second pattern in a servo region of a substrate. A circumferential line pattern is created overlapping the first pattern to create rectangle-shaped protrusions in the data region of the substrate. A chevron pattern is created overlapping the second pattern to create chevron-derived protrusions in the servo region of the substrate.
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公开(公告)号：US09773520B2
公开(公告)日：2017-09-26
申请号：US14158611
申请日：2014-01-17
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Shuaigang Xiao , Yautzong Hsu , HongYing Wang , Kim Y. Lee
CPC classification number: G11B5/855 , G03F7/0002
Abstract: The embodiments disclose a method of using a trimmed imprinted resist and chemical contrast pattern to guide a directed self-assembly (DSA) of a predetermined lamellar block copolymer (BCP), creating chromium (Cr) lamellar guiding lines using the BCP and DSA in a dry Cr lift-off process and etching the Cr lamellar guiding line patterns into a substrate to fabricate the imprint template.
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公开(公告)号：US09626996B2
公开(公告)日：2017-04-18
申请号：US14588865
申请日：2015-01-02
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Zhaoning Yu , Kim Yang Lee , Michael Feldbaum , Yautzong Hsu , Wei Hu , Shuaigang Xiao , Henry Yang , HongYing Wang , Rene Johannes Marinus van de Veerdonk , David Kuo
IPC: G03F7/004 , G11B5/855 , H01L21/3065 , G03F7/40 , H01L21/027 , G03F7/20 , H01L21/02 , B82Y10/00 , B82Y40/00 , G03F7/00 , B81C1/00 , B32B27/36 , B32B27/28 , B32B27/30 , B32B3/30 , G03F7/16 , B05D1/00 , C23F4/00
CPC classification number: G11B5/855 , B05D1/005 , B32B3/30 , B32B27/283 , B32B27/302 , B32B27/308 , B32B27/36 , B32B2457/14 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C23F4/00 , G03F7/0002 , G03F7/0035 , G03F7/165 , G03F7/2022 , G03F7/203 , G03F7/2059 , G03F7/40 , H01L21/02112 , H01L21/0274 , H01L21/3065 , Y10T428/24612
Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.
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20.发明申请BIT PATTERNED MEDIA TEMPLATE INCLUDING ALIGNMENT MARK AND METHOD OF USING SAME 审中-公开位图形媒体模板，包括对齐标记及其使用方法公开(公告)号：US20170023866A1
公开(公告)日：2017-01-26
申请号：US15289505
申请日：2016-10-10
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： HongYing Wang , Kim Y. Lee , Yautzong Hsu , Nobuo Kurataka , Gennady Gauzner , Shuaigang Xiao
IPC: G03F7/20
CPC classification number: G03F7/70141 , G03F7/0002 , G03F9/7042 , G03F9/7076 , G11B5/855
Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
Abstract translation: 公开了一种方法，其包括在衬底中形成至少一个衬底对准标记和至少一个光刻对准标记; 在所述基板上形成种子层; 以及在所述种子层中形成引导图案和至少一个引导图案对准标记，其中所述至少一个引导图案对准标记形成在所述至少一个基板对准标记上。 所述方法还包括确定所述至少一个引导图案对准标记相对于所述至少一个基板对准标记的对准误差; 以及在所述基板的至少一个区域上构图特征，其中所述特征基于所述至少一个光刻对准标记和所述对准误差位于所述基板上。
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