公开(公告)号：US20170025333A1

公开(公告)日：2017-01-26

申请号：US15204197

申请日：2016-07-07

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Ali Salih

IPC: H01L23/495 ,  H01L21/48

CPC classification number: H01L23/49562 ,  H01L21/4825 ,  H01L23/49513 ,  H01L23/49517 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49558 ,  H01L23/49575 ,  H01L2224/0603 ,  H01L2224/16245 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2224/37099

Abstract: In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure, a second device receiving structure, a first lead, a second lead, and a third lead. A first semiconductor chip is coupled to the first device receiving structure and a second semiconductor chip is coupled to the first semiconductor chip and the second device receiving structure. The first semiconductor chip is configured from a silicon semiconductor material and has a gate bond pad, a source bond pad, and a drain bond pad, and the second semiconductor chip is configured from a gallium nitride semiconductor chip and has a gate bond pad, a source bond pad, and a drain bond pad. In accordance with another embodiment, a method for manufacturing a semiconductor component includes coupling a first semiconductor chip to a support and coupling a second semiconductor chip to the support.

Abstract translation: 根据实施例，半导体部件包括具有第一器件接收结构的支撑件，第二器件接收结构，第一引线，第二引线和第三引线。 第一半导体芯片耦合到第一器件接收结构，第二半导体芯片耦合到第一半导体芯片和第二器件接收结构。 第一半导体芯片由硅半导体材料构成，具有栅极接合焊盘，源极接合焊盘和漏极接合焊盘，第二半导体芯片由氮化镓半导体芯片构成，具有栅极接合焊盘， 源极接合焊盘和漏极接合焊盘。 根据另一实施例，一种用于制造半导体部件的方法包括：将第一半导体芯片耦合到支撑件并将第二半导体芯片耦合到支撑件。

公开(公告)号：US09502550B2

公开(公告)日：2016-11-22

申请号：US14814106

申请日：2015-07-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  John Michael Parsey, Jr. ,  Ali Salih ,  Prasad Venkatraman

IPC: H01L29/00 ,  H01L29/778 ,  H01L29/06 ,  H01L29/423 ,  H01L27/12 ,  H01L27/088 ,  H01L27/06 ,  H01L29/78 ,  H01L21/84 ,  H01L29/66 ,  H01L29/40 ,  H01L29/04 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417

CPC classification number: H01L29/7783 ,  H01L21/845 ,  H01L27/0688 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66795 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7789 ,  H01L29/785 ,  H01L29/872

Abstract: In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.

公开(公告)号：US09245963B2

公开(公告)日：2016-01-26

申请号：US14514017

申请日：2014-10-14

Applicant: Semiconductor Components Industries, LLC

Inventor： Peter A Burke ,  Gordon M Grivna ,  Balaji Padmanabhan ,  Prasad Venkatraman

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/40 ,  H01L29/78 ,  H01L29/739 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/08

CPC classification number: H01L29/7813 ,  H01L29/0869 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66348 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7827

Abstract: In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.

Abstract translation: 在一个实施例中，垂直绝缘栅场效应晶体管包括形成在半导体材料内的沟槽结构中的屏蔽电极。 栅电极使用栅极绝缘层与半导体材料隔离。 在形成屏蔽电极之前，间隔层可以沿沟槽结构的部分形成屏蔽绝缘层。 屏蔽绝缘层比栅极绝缘层厚。 在另一个实施例中，屏蔽绝缘层具有可变的厚度。

公开(公告)号：US20150028414A1

公开(公告)日：2015-01-29

申请号：US14514017

申请日：2014-10-14

Applicant: Semiconductor Components Industries, LLC

Inventor： Peter A. Burke ,  Gordon M. Grivna ,  Balaji Padmanabhan ,  Prasad Venkatraman

IPC: H01L29/423 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/0869 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66348 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7827

Abstract: In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.

Abstract translation: 在一个实施例中，垂直绝缘栅场效应晶体管包括形成在半导体材料内的沟槽结构中的屏蔽电极。 栅电极使用栅极绝缘层与半导体材料隔离。 在形成屏蔽电极之前，间隔层可以沿沟槽结构的部分形成屏蔽绝缘层。 屏蔽绝缘层比栅极绝缘层厚。 在另一个实施例中，屏蔽绝缘层具有可变的厚度。

公开(公告)号：US11127731B2

公开(公告)日：2021-09-21

申请号：US16847013

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US10811514B2

公开(公告)日：2020-10-20

申请号：US16287400

申请日：2019-02-27

Applicant: Semiconductor Components Industries, LLC

Inventor： Woochul Jeon ,  Balaji Padmanabhan

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H03K17/687 ,  H01L29/423 ,  H01L27/06 ,  H01L29/205

Abstract: An electronic device can include an enhancement-mode high electron mobility transistor (HEMT) that includes a source electrode; a drain electrode; and a gate. In an embodiment, the gate can correspond to spaced-apart gate electrodes and a space disposed between the spaced-apart gate electrodes, wherein the first space has a width configured such that, a continuous depletion region forms across all of the width of the first space. In another embodiment, the gate can be a gate electrode having a nonuniform thickness along a line in a gate width direction. In another aspect, a method of using the electronic device can include, during a transient period when the HEMT is in an off-state, flowing current from the drain electrode to the source electrode when Vds>−Vth+Vgs.

公开(公告)号：US10770381B2

公开(公告)日：2020-09-08

申请号：US16036560

申请日：2018-07-16

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Ali Salih ,  Prasad Venkatraman

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/00 ,  H01L29/20 ,  H01L29/772 ,  H01L25/07 ,  H01L23/373

Abstract: In accordance with an embodiment, a semiconductor component includes a support and a plurality of leads. An insulated metal substrate having a first portion and a second portion bonded to the support. A semiconductor chip comprising a III-N semiconductor material is bonded to the first portion of the insulated metal substrate and a first electrical interconnect is coupled between a drain bond pad the first portion of the insulated metal substrate. A second semiconductor chip is bonded to the first electrical interconnect. A second electrical interconnect coupled between a lead of the plurality of leads and the second semiconductor chip. In accordance with another embodiment, a method of manufacturing a semiconductor component includes coupling a first semiconductor chip to a first electrically conductive layer and coupling a second semiconductor chip to a second electrically conductive layer.

公开(公告)号：US20200243503A1

公开(公告)日：2020-07-30

申请号：US16847013

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L27/02 ,  H01L29/40 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L27/088 ,  H01L29/10

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US10658351B2

公开(公告)日：2020-05-19

申请号：US16104039

申请日：2018-08-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US10593666B2

公开(公告)日：2020-03-17

申请号：US16215870

申请日：2018-12-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Jason McDonald ,  Ali Salih ,  Alexander Young

IPC: H01L29/20 ,  H01L27/06 ,  H01L21/8258 ,  H01L21/74 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L27/02 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.