公开(公告)号：US20160293641A1

公开(公告)日：2016-10-06

申请号：US15187106

申请日：2016-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/04

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20140291672A1

公开(公告)日：2014-10-02

申请号：US14220681

申请日：2014-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA

IPC: H01L27/12

Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

Abstract translation: 处理使用铜等形成的布线的步骤的稳定性增加。 半导体膜中的杂质浓度降低。 提高了半导体器件的电气特性。 半导体器件包括半导体膜，与半导体膜接触的一对第一保护膜，与一对第一保护膜接触的包含铜等的一对导电膜，与第一保护膜接触的一对第二保护膜 一对导电膜位于与该对第一保护膜相对的一侧上，与该半导体膜接触的栅极绝缘膜以及与该半导体膜重叠的栅电极与该栅极绝缘膜之间。 在横截面中，一对第二保护膜的侧面位于一对导电膜的侧面的外侧。

公开(公告)号：US20250159936A1

公开(公告)日：2025-05-15

申请号：US19013412

申请日：2025-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H10D30/67 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/306 ,  H01L21/465 ,  H10D30/01 ,  H10D62/10 ,  H10D62/17 ,  H10D62/40 ,  H10D62/80 ,  H10D64/27 ,  H10D86/01 ,  H10D86/40 ,  H10D86/60 ,  H10D99/00 ,  H10K59/123

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20240105734A1

公开(公告)日：2024-03-28

申请号：US18531767

申请日：2023-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masayuki SAKAKURA ,  Motoki NAKASHIMA

IPC: H01L27/12

CPC classification number: H01L27/1225

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

公开(公告)号：US20240088303A1

公开(公告)日：2024-03-14

申请号：US18513803

申请日：2023-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka NAKAZAWA ,  Junichi KOEZUKA ,  Takashi HAMOCHI

IPC: H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L27/146 ,  H01L27/15 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L21/76843 ,  H01L21/76856 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/146 ,  H01L27/15 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H10B12/312 ,  H01L27/088

Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.

公开(公告)号：US20230335598A1

公开(公告)日：2023-10-19

申请号：US18213311

申请日：2023-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masashi OOTA

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/12 ,  H01L29/267 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/24 ,  H01L29/0692 ,  H01L29/12 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/43 ,  H01L29/66045 ,  H01L21/02414 ,  H01L21/02428

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

公开(公告)号：US20230268445A1

公开(公告)日：2023-08-24

申请号：US18133622

申请日：2023-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Nobuharu OHSAWA ,  Masami JINTYOU ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/49 ,  H01L29/04 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  H01L27/1255 ,  H01L21/28 ,  H01L27/124 ,  H01L29/4908 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/45

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US20210343869A1

公开(公告)日：2021-11-04

申请号：US17367677

申请日：2021-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Toshimitsu OBONAI

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics, a semiconductor device with stable electrical characteristics, or a highly reliable semiconductor device or display device is provided. A first insulating layer and a first conductive layer are stacked over a first region of a first metal oxide layer. A first layer is formed in contact with a second metal oxide layer and a second region of the first metal oxide layer that is not overlapped by the first insulating layer. Heat treatment is performed to lower the resistance of the second region and the second metal oxide layer. A second insulating layer is formed. A second conductive layer electrically connected to the second region is formed over the second insulating layer. Here, the first layer is formed to contain at least one of aluminum, titanium, tantalum, and tungsten.

公开(公告)号：US20210305433A1

公开(公告)日：2021-09-30

申请号：US17346359

申请日：2021-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka NAKAZAWA ,  Junichi KOEZUKA ,  Takashi HAMOCHI

IPC: H01L29/786 ,  H01L27/146 ,  H01L27/108 ,  H01L29/66 ,  H01L27/15 ,  H01L29/45 ,  H01L27/12 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.

公开(公告)号：US20210202745A1

公开(公告)日：2021-07-01

申请号：US17180968

申请日：2021-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G09F9/30 ,  H01L21/02 ,  H05B33/14 ,  H01L29/51 ,  H01L29/66 ,  H05B33/10

Abstract: A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.
A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.