公开(公告)号：US07612381B2

公开(公告)日：2009-11-03

申请号：US11710744

申请日：2007-02-26

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。

公开(公告)号：US08941136B2

公开(公告)日：2015-01-27

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/00 ,  H01L33/22 ,  H01L33/40

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

摘要翻译： 半导体发光元件包括：半导体堆叠部，其包括发光层，从发光层射出的光入射的衍射面，形成在比所述发光层的光波长长的时间内形成的凸部或凹部 光并且短于光的相干长度，其中衍射面根据布拉格的衍射条件以多模式反射入射光，并根据布拉格的衍射条件将入射光透射到多模中，并且反射面反射多模光 在衍射面衍射并使多模光再次入射到衍射面。 半导体堆叠部分形成在衍射面上。

公开(公告)号：US20120228656A1

公开(公告)日：2012-09-13

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate.[MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.

摘要翻译： [问题]通过抑制半导体层和透明基板的反射来提高光提取效率。 解决方案包括发光层的半导体堆叠部分的半导体发光元件形成在基板的主表面上，从发光层发射的光入射到该凸部或凹部的衍射面 部分形成在比光的光波长长并且短于光的相干长度的周期中，形成在基板的主表面侧上，反射面反射在衍射面衍射的光，并使 在基板的背面侧形成有再次入射到衍射面的光。

公开(公告)号：US07756189B2

公开(公告)日：2010-07-13

申请号：US11897895

申请日：2007-08-31

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01S3/08 ,  H01S5/00 ,  G01B9/02 ,  G01B11/02

CPC分类号： G03F7/70408 ,  G03F7/70025 ,  H01L33/22 ,  H01S3/082 ,  H01S3/109 ,  H01S3/2207

摘要： The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.

摘要翻译： 本发明公开了一种双光束干涉曝光装置，包括：设置在激光谐振器中的激光光源; 设置在所述激光谐振器中的用于将由所述激光源输出的激光转换成高次谐波的单次谐波产生装置; 在激光谐振器中提供的标准具，用作窄带波长滤波器; 分束器将激光谐振器外部的激光输出分成两束光束; 以及使得光束在要暴露的目标上彼此干扰的干涉光学系统。

公开(公告)号：US20070008539A1

公开(公告)日：2007-01-11

申请号：US10550824

申请日：2004-03-23

申请人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： G01N21/00 ,  G08B17/12

CPC分类号： G02B5/284

摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).

摘要翻译： 为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置 包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。 滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。 光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。 形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y） ，0 <= y <= 1）。

公开(公告)号：US20060145166A1

公开(公告)日：2006-07-06

申请号：US11365459

申请日：2006-02-28

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/2205 ,  H01L33/007

摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0

摘要翻译： 半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层 该衬底的主表面由Al y Ga 1-y N（0

公开(公告)号：US07183578B2

公开(公告)日：2007-02-27

申请号：US11365459

申请日：2006-02-28

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

IPC分类号： H01L27/15

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/2205 ,  H01L33/007

摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1−yN (0

摘要翻译： 半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层 该衬底的主表面由Al y Ga 1-y N（0

公开(公告)号：US09099597B2

公开(公告)日：2015-08-04

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/16 ,  H01L33/12 ,  H01L33/34

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100. Visible light is created from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from the nitride semiconductor layer.

摘要翻译： 提供一种发光二极管，其可以获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发射。由多孔状态的单晶6H型SiC组成的多孔层124形成在 发光二极管元件100的SiC衬底102.当从氮化物半导体层发射的紫外线激发多孔层124时，可见光由蓝色到绿色产生。

公开(公告)号：US20120037923A1

公开(公告)日：2012-02-16

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/02

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： [PROBLEM] To provide a light emitting diode which can obtain emission at shorter wavelength side of emission range of normal 6H-type SiC doped with B and N, and a method for manufacturing the same.[MEANS FOR SOLVING] Porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100 such that visible light which is from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from nitride semiconductor layer.

摘要翻译： [问题]提供一种能够获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发光二极管及其制造方法。 [解决方案]由多孔状态的单晶6H型SiC构成的多孔层124形成在发光二极管元件100的SiC衬底102上，使得当多孔层124的蓝色到绿色的可见光 被从氮化物半导体层发射的紫外线激发。

公开(公告)号：US07985964B2

公开(公告)日：2011-07-26

申请号：US12313123

申请日：2008-11-17

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/40

摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

摘要翻译： 本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。