公开(公告)号：US08398491B2

公开(公告)日：2013-03-19

申请号：US12912213

申请日：2010-10-26

申请人： Tomohiro Saeki ,  Masanori Suzuki ,  Yuki Miyamoto ,  Atsushi Yamazumi ,  Masaki Kato ,  Hiroyuki Yamamoto ,  Toshiyuki Saburi ,  Ryota Akada

发明人： Tomohiro Saeki ,  Masanori Suzuki ,  Yuki Miyamoto ,  Atsushi Yamazumi ,  Masaki Kato ,  Hiroyuki Yamamoto ,  Toshiyuki Saburi ,  Ryota Akada

IPC分类号： F16D7/02

CPC分类号： F16F15/129 ,  F16F2230/02

摘要： A torque fluctuation absorbing apparatus includes a first plate member, a second plate member rotatable relative to the first plate member, and a first friction member disposed between the first plate member and the second plate member and pressed against the first plate member in a slidable manner. The second plate member includes a first retaining surface that makes contact with the first friction member. The first friction member includes a plurality of grooves at a surface facing the first retaining surface of the second plate member, the grooves extending in a radial direction of the first friction member.

摘要翻译： 扭矩波动吸收装置包括第一板构件，可相对于第一板构件旋转的第二板构件和设置在第一板构件和第二板构件之间的第一摩擦构件，并以可滑动的方式压靠第一板构件 。 第二板构件包括与第一摩擦构件接触的第一保持面。 第一摩擦构件包括在面向第二板构件的第一保持面的表面处的多个槽，所述槽沿第一摩擦构件的径向方向延伸。

公开(公告)号：US08357050B2

公开(公告)日：2013-01-22

申请号：US12730691

申请日：2010-03-24

申请人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto ,  Masanori Suzuki

发明人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto ,  Masanori Suzuki

IPC分类号： F16D7/02

CPC分类号： F16D7/025 ,  F16F15/1297

摘要： A torque fluctuation absorber includes a first plate member to which power of rotation is transmitted from a first rotational shaft, a second plate member arranged at a preset distance from the first plate member, a third plate member arranged between the first plate member and the second plate member and configured to transmit power of rotation to a second rotational shaft. The torque fluctuation absorber also includes a fourth plate member arranged at a preset distance from the second plate member, and a resilient member arranged between the second plate member and the fourth plate member and configured to bias the second plate member towards the third plate member. The resilient member includes a first end abutting against the second plate member in an area where the second plate member faces the third plate member in the axial direction, and a second end abutting against the fourth plate member.

摘要翻译： 扭矩波动吸收器包括：第一板构件，其旋转动力从第一旋转轴传递，第二板构件布置在距离第一板构件预定距离处;第三板构件，布置在第一板构件和第二板构件之间; 并且构造成将旋转动力传递到第二旋转轴。 扭矩波动吸收器还包括以与第二板构件预定距离布置的第四板构件和布置在第二板构件和第四板构件之间的弹性构件，其构造成朝向第三板构件偏压第二板构件。 弹性构件包括在第二板构件在轴向方向上面对第三板构件的区域中抵靠第二板构件的第一端和抵靠第四板构件的第二端。

公开(公告)号：US20120217045A1

公开(公告)日：2012-08-30

申请号：US13499928

申请日：2010-10-05

申请人： Iori Hukushima ,  Tomohiro Hirata ,  Hidekazu Kondou ,  Susumu Kaneko ,  Satoshi Uehara ,  Yuki Miyamoto

发明人： Iori Hukushima ,  Tomohiro Hirata ,  Hidekazu Kondou ,  Susumu Kaneko ,  Satoshi Uehara ,  Yuki Miyamoto

IPC分类号： H05K1/00 ,  C08L75/04 ,  H05K3/00

CPC分类号： H05K3/285 ,  C08G18/00 ,  C08G18/0823 ,  C08G18/12 ,  C08G18/3212 ,  C08G18/348 ,  C08G18/4081 ,  C08G18/44 ,  C08G18/6438 ,  C08G18/65 ,  C08G18/6588 ,  C08G18/66 ,  C08G18/6633 ,  C08G18/664 ,  C08G18/758 ,  C08G18/7607 ,  C08G18/8061 ,  C08G18/82 ,  C08J3/24 ,  C08J2375/04 ,  C08K5/0025 ,  C08L75/00 ,  C08L75/04 ,  C08L2203/206 ,  C08L2312/00 ,  H05K1/0393 ,  C08G18/345

摘要： A thermosetting resin composition which contains a polyurethane resin and a curing agent, the polyurethane resin including a constitutional unit derived from an alicyclic diol and having an acid value of 10 to 35 mgKOH/g.

摘要翻译： 一种含有聚氨酯树脂和固化剂的热固性树脂组合物，所述聚氨酯树脂包含衍生自脂环族二醇并具有10至35mgKOH / g酸值的结构单元。

公开(公告)号：US20060091494A1

公开(公告)日：2006-05-04

申请号：US10546834

申请日：2004-02-24

申请人： Yuki Miyamoto ,  Yukio Sakashita

发明人： Yuki Miyamoto ,  Yukio Sakashita

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01G4/1218 ,  C01G29/006 ,  C01P2006/40 ,  C04B35/475 ,  C04B2235/3213 ,  C04B2235/6585 ,  C04B2235/787 ,  H01G4/30 ,  H01L28/55 ,  Y10S438/957

摘要： A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2 Am−1 Bm O3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layer 8a and a lower portion electrode 6, a second bismuth layer-structured compound layer 8b including bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer 8a.

摘要翻译： 电介质薄膜8，其包含由（Bi 2 O 2 O 2）2 +的组成式表示的第一铋层结构化合物层8a， （A m-1-B）O 3 m + 1 + 2 - 或 - - - - （2） 其中“m”是正数，“A”在...的位置 选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，“B”是选自Fe，Co，Cr，Ga，Ti，Nb，Ta，Sb，V，Mo中的至少一种元素， 在第一铋层结构化合物层8a和下部电极6之间，包含超过所述第一铋层结构化合物层8的组成式中的铋的第二铋层结构化合物层8b 一个。

公开(公告)号：US5892291A

公开(公告)日：1999-04-06

申请号：US670313

申请日：1996-06-27

申请人： Koichiro Narimatsu ,  Shigenori Yamashita ,  Nobuyuki Yoshioka ,  Shinya Soeda ,  Atsushi Hachisuka ,  Koji Taniguchi ,  Yuki Miyamoto ,  Takayuki Saito ,  Ayumi Minamide

发明人： Koichiro Narimatsu ,  Shigenori Yamashita ,  Nobuyuki Yoshioka ,  Shinya Soeda ,  Atsushi Hachisuka ,  Koji Taniguchi ,  Yuki Miyamoto ,  Takayuki Saito ,  Ayumi Minamide

IPC分类号： G03F1/36 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H05K1/02 ,  H01L23/544

CPC分类号： G03F7/706 ,  G03F7/70633 ,  Y10T428/24802 ,  Y10T428/24917

摘要： The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

摘要翻译： 本发明包括形成在第一层中的第一半导体元件形成元件，通过与第一半导体元件形成元件相同的制造步骤形成的第一测量标记，形成在第一层之上的第二层中的第二半导体元件形成元件， 以及在与第二半导体元件形成部件相同的制造步骤中形成的用于测量第一和第二半导体元件形成部件之间的配准精度的第二测量标记。 第一测量标记具有在照射光时受到与第一半导体元件形成部件相同的像差影响的图案，并且第二测量标记具有受光照射时受到与第二半导体元件形成部件相同的像差影响的图案 。 因此，可以提供考虑到像差影响的配准精度测量标记。

公开(公告)号：US08475337B2

公开(公告)日：2013-07-02

申请号：US13258252

申请日：2009-05-07

申请人： Masahide Ishikawa ,  Kaname Uzuki ,  Atsushi Morita ,  Keiko Tanaka ,  Yuki Miyamoto ,  Satoru Shiga ,  Masaki Morita ,  Miyuki Matsuda ,  Manabu Orihashi ,  Yoshihiro Saeki ,  Keiichi Uno ,  Hiroki Nishimura ,  Takayuki Kumamoto

发明人： Masahide Ishikawa ,  Kaname Uzuki ,  Atsushi Morita ,  Keiko Tanaka ,  Yuki Miyamoto ,  Satoru Shiga ,  Masaki Morita ,  Miyuki Matsuda ,  Manabu Orihashi ,  Yoshihiro Saeki ,  Keiichi Uno ,  Hiroki Nishimura ,  Takayuki Kumamoto

IPC分类号： F16H59/00

CPC分类号： B60H1/08 ,  B60H1/00314 ,  F01P2060/16 ,  F02B29/0493 ,  F02M26/33 ,  F02N19/04 ,  F16H57/0413 ,  Y02T10/146 ,  Y02T10/16 ,  Y10T477/653

摘要： When there is an extremely low ambient temperature, an electronic control unit controls operation of a circulation path for coolant water in such a manner that, after starting of an engine, the coolant water is supplied from the engine first to a throttle valve and an EGR valve and then to an oil warmer for a transmission. This solves a failure problem in the throttle valve and the EGR valve caused by frost formation at an early stage. As a result, desired operating performance of the vehicle is quickly ensured and heat management in the vehicle is carried out in a desired manner when there is an extremely low ambient temperature.

摘要翻译： 当环境温度非常低时，电子控制单元控制冷却水循环路径的操作，使得在发动机启动之后，冷却水从发动机首先供应到节流阀和EGR 阀门，然后到油加热器进行传动。 这解决了在早期阶段由于霜冻形成引起的节流阀和EGR阀的故障问题。 结果，当环境温度极低时，能够快速确保车辆的期望的操作性能，并且以期望的方式进行车辆的热管理。

公开(公告)号：US20110146945A1

公开(公告)日：2011-06-23

申请号：US13061666

申请日：2008-09-08

申请人： Masaki Morita ,  Yuki Miyamoto

发明人： Masaki Morita ,  Yuki Miyamoto

IPC分类号： B60H1/02 ,  F01N3/18 ,  F02M25/07

CPC分类号： B60H1/00764 ,  B60H1/00828 ,  B60H1/034 ,  F01N3/2006 ,  F01P7/08 ,  F01P2037/02 ,  F01P2060/08 ,  F02M26/00 ,  Y02A50/2322 ,  Y10T477/653

摘要： During the time period from the start of an engine to the completion of a catalyst warming-up, the drive of a blower in an air-conditioning equipment is inhibited to suppress the heat-exchange of the air, which is caused to flow in an air duct by the drive of the blower, with cooling water in a heater core disposed in a circulating passage. Therefore, the heat generated in the engine is restrained from being fed to the inside of a compartment through that air after fed to the cooling water. As a result, the temperatures of the engine and the cooling water rise quickly, and the temperature of the exhaust of the engine rises so that the heat is efficiently fed to the catalyst through the exhaust. This means that the heat generated in the engine is preferentially fed through the exhaust to the catalyst that is the portion needing the feed of heat at a low temperature, other than the compartment in the automobile.

摘要翻译： 在从发动机开始到催化剂预热完成的时间段期间，抑制空气调节设备中的鼓风机的驱动，抑制空气的热交换 通过鼓风机驱动的空气管道，其中设置在循环通道中的加热器芯中的冷却水。 因此，在供给到冷却水之后，发动机产生的热量被抑制成通过该空气供给到室内。 结果，发动机和冷却水的温度迅速上升，发动机排气的温度上升，从而通过排气将热量有效地送入催化剂。 这意味着在发动机中产生的热量优先地通过排气进料到催化剂，该催化剂是除了汽车隔室之外的低温下进行加热的部分。

公开(公告)号：US07312514B2

公开(公告)日：2007-12-25

申请号：US10546834

申请日：2004-02-24

申请人： Yuki Miyamoto ,  Yukio Sakashita

发明人： Yuki Miyamoto ,  Yukio Sakashita

IPC分类号： H01L29/00

CPC分类号： H01G4/1218 ,  C01G29/006 ,  C01P2006/40 ,  C04B35/475 ,  C04B2235/3213 ,  C04B2235/6585 ,  C04B2235/787 ,  H01G4/30 ,  H01L28/55 ,  Y10S438/957

摘要： A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2 Am−1 Bm O3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layer 8a and a lower portion electrode 6, a second bismuth layer-structured compound layer 8b including bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer 8a.

摘要翻译： 电介质薄膜8，其包含由（Bi 2 O 2 O 2）2 +的组成式表示的第一铋层结构化合物层8a， （A m-1-B）O 3 m + 1 + 2 - 或 - - - - （2） 其中“m”是正数，“A”在...的位置 选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，“B”是选自Fe，Co，Cr，Ga，Ti，Nb，Ta，Sb，V，Mo中的至少一种元素， 在第一铋层结构化合物层8a和下部电极6之间，包含超过所述第一铋层结构化合物层8的组成式中的铋的第二铋层结构化合物层8b 一个。

公开(公告)号：US06617080B1

公开(公告)日：2003-09-09

申请号：US09563953

申请日：2000-05-02

申请人： Toshihide Kawachi ,  Takuya Matsushita ,  Shigenori Yamashita ,  Yuki Miyamoto ,  Atsushi Ueno ,  Shinroku Maejima

发明人： Toshihide Kawachi ,  Takuya Matsushita ,  Shigenori Yamashita ,  Yuki Miyamoto ,  Atsushi Ueno ,  Shinroku Maejima

IPC分类号： G03F900

CPC分类号： G03F7/70633

摘要： The present invention provides a photomask, a semiconductor device, and a method for exposing through the photomask. The photomask comprises a photomask substrate, and an on-mask circuit area including an on-mask circuit pattern and an on-mask test mark area including an on-mask test pattern, both formed on the surface of the substrate, wherein the photomask substrate further includes an on-mask photolithography screening mark area including an on-mask comparison pattern and an on-mask screening pattern, the on-mask comparison pattern has substantially the same configuration as at least a part of the on-mask circuit pattern, and the on-mask screening pattern has substantially the same configuration as at least a part of the on-mask test pattern. The present invention allows it to measure the actual displacement generated from an overlaying (i.e. alignment) process for the purpose of eliminating of an the overlay displacement which can take place in a photolithography process.

摘要翻译： 本发明提供了一种光掩模，半导体器件和用于曝光光掩模的方法。 光掩模包括光掩模基板和包括掩模电路图案的掩模电路区域和包括掩模测试图案的掩模测试标记区域，二者都形成在基板的表面上，其中光掩模基板 进一步包括包括掩膜比较图案和掩模屏蔽图案的掩模光刻掩模标记区域，掩模比较图案具有与至少一部分屏蔽电路图案基本相同的配置，以及 掩模掩模图案具有与掩模测试图案的至少一部分基本相同的构造。 本发明允许它测量从重叠（即对准）过程产生的实际位移，以消除可能在光刻工艺中发生的覆盖位移。

公开(公告)号：US06374397B1

公开(公告)日：2002-04-16

申请号：US09332984

申请日：1999-06-15

申请人： Yuki Miyamoto ,  Takeo Ishibashi

发明人： Yuki Miyamoto ,  Takeo Ishibashi

IPC分类号： G06F1750

CPC分类号： G06T7/001 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G06T2207/30148

摘要： A lot determination apparatus and method and a recording medium having the lot determination method recorded thereon, wherein there can be realized a reduction in the number of times wafers are re-subjected to photolithography and prevention of elimination of a chip lot in a subsequent step, by determination of whether or not a chip is conforming through comprehensive determination of results of a plurality of inspections such as an overlay inspection, an etched pattern inspection, and a resist pattern inspection. A determination is made as to whether or not a lot is defective by comprehensive determination of results of a plurality of inspection processes, thereby preventing elimination of the lot as being nonconforming. As a result, specifications for inspections can be relaxed, which in turn enables a reduction in a reprocessing ratio. Further, no short circuit arises between the first and second patterns while determination equations are satisfied, and elimination of a lot in a subsequent process can be prevented. Link check may be carried out not only for each set of measurement points but also on the basis of analysis of results of all the measurement points. Determination equations may be more generalized.

摘要翻译： 许多确定装置和方法以及其上记录有批次确定方法的记录介质，其中可以实现晶片重新进行光刻的次数的减少，并且防止在随后的步骤中消除芯片批次， 通过对覆盖检查，蚀刻图案检查和抗蚀剂图案检查等多次检查的结果的综合判定来确定芯片是否一致。 通过综合确定多个检查过程的结果，确定批次是否有缺陷，从而防止批次不合格。 因此，可以放宽检查规范，从而能够降低后处理比。 此外，在满足确定方程式的同时，在第一和第二图案之间不产生短路，并且可以防止后续处理中的批次的消除。 链路检查不仅可以用于每组测量点，而且还可以基于对所有测量点的结果进行分析。 确定方程式可能更广泛。