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    Damper device
    3.
    发明授权
    Damper device 有权
    减震装置

    公开(公告)号：US09086116B2

    公开(公告)日：2015-07-21

    申请号：US13813050

    申请日：2011-07-28

    申请人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto

    发明人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto

    IPC分类号： F16F15/12 ,  F16F15/315 ,  F16F15/139 ,  B60K6/445 ,  F16D1/10 ,  F16D3/14

    CPC分类号： F16F15/3153 ,  B60K6/445 ,  B60Y2400/48 ,  F16D1/10 ,  F16D3/14 ,  F16D2001/103 ,  F16F15/1395 ,  Y02T10/6204 ,  Y02T10/6239 ,  Y10T74/2121

    摘要： A damper device comprises: a first shaft that outputs rotational power from a power source; a second shaft that transmits rotational power to a gear mechanism and has outer splines; a first rotational member(s) to which the rotational power of the first shaft is transmitted; a second rotational member spline-engaged with the outer splines; a damper unit that absorbs torque fluctuation between the first and second rotational members; and an inertial body having inner splines spline-engaged with the outer splines and having an annular portion. The tooth parts of the inner splines are pressed into contact with the tooth parts of the outer splines in the circumferential direction of the inertial body.

    摘要翻译： 阻尼装置包括：从电源输出旋转动力的第一轴; 第二轴，其将旋转动力传递到齿轮机构并具有外花键; 传送第一轴的旋转动力的第一旋转构件; 与所述外花键花键接合的第二旋转构件; 阻尼单元，其吸收第一和第二旋转构件之间的扭矩波动; 以及具有与外花键花键接合并具有环形部分的内花键的惯性体。 内花键的齿部在惯性体的圆周方向上与外花键的齿部部分压接。

    TORQUE FLUCTUATION ABSORBING APPARATUS
    5.
    发明申请
    TORQUE FLUCTUATION ABSORBING APPARATUS 有权
    扭矩波动吸收装置

    公开(公告)号：US20110098119A1

    公开(公告)日：2011-04-28

    申请号：US12912213

    申请日：2010-10-26

    申请人： Tomohiro Saeki ,  Masanori Suzuki ,  Yuki Miyamoto ,  Atsushi Yamazumi ,  Masaki Kato ,  Hiroyuki Yamamoto ,  Toshiyuki Saburi ,  Ryota Akada

    发明人： Tomohiro Saeki ,  Masanori Suzuki ,  Yuki Miyamoto ,  Atsushi Yamazumi ,  Masaki Kato ,  Hiroyuki Yamamoto ,  Toshiyuki Saburi ,  Ryota Akada

    IPC分类号： F16D7/02

    CPC分类号： F16F15/129 ,  F16F2230/02

    摘要： A torque fluctuation absorbing apparatus includes a first plate member, a second plate member rotatable relative to the first plate member, and a first friction member disposed between the first plate member and the second plate member and pressed against the first plate member in a slidable manner. The second plate member includes a first retaining surface that makes contact with the first friction member. The first friction member includes a plurality of grooves at a surface facing the first retaining surface of the second plate member, the grooves extending in a radial direction of the first friction member.

    摘要翻译： 扭矩波动吸收装置包括第一板构件，可相对于第一板构件旋转的第二板构件和设置在第一板构件和第二板构件之间的第一摩擦构件，并以可滑动的方式压靠第一板构件 。 第二板构件包括与第一摩擦构件接触的第一保持面。 第一摩擦构件包括在面向第二板构件的第一保持面的表面处的多个槽，所述槽沿第一摩擦构件的径向方向延伸。

    DAMPER DEVICE
    6.
    发明申请
    DAMPER DEVICE 有权
    阻尼器装置

    公开(公告)号：US20130125700A1

    公开(公告)日：2013-05-23

    申请号：US13813050

    申请日：2011-07-28

    申请人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto

    发明人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto

    IPC分类号： F16F15/315

    CPC分类号： F16F15/3153 ,  B60K6/445 ,  B60Y2400/48 ,  F16D1/10 ,  F16D3/14 ,  F16D2001/103 ,  F16F15/1395 ,  Y02T10/6204 ,  Y02T10/6239 ,  Y10T74/2121

    摘要： A damper device comprises: a first shaft that outputs rotational power from a power source; a second shaft that transmits rotational power to a gear mechanism and has outer splines; a first rotational member(s) to which the rotational power of the first shaft is transmitted; a second rotational member spline-engaged with the outer splines; a damper unit that absorbs torque fluctuation between the first and second rotational members; and an inertial body having inner splines spline-engaged with the outer splines and having an annular portion. The tooth parts of the inner splines are pressed into contact with the tooth parts of the outer splines in the circumferential direction of the inertial body.

    摘要翻译： 阻尼装置包括：从电源输出旋转动力的第一轴; 第二轴，其将旋转动力传递到齿轮机构并具有外花键; 传送第一轴的旋转动力的第一旋转构件; 与所述外花键花键接合的第二旋转构件; 阻尼单元，其吸收第一和第二旋转构件之间的扭矩波动; 以及具有与外花键花键接合并具有环形部分的内花键的惯性体。 内花键的齿部在惯性体的圆周方向上与外花键的齿部部分压接。

    Torque fluctuation absorbing apparatus
    7.
    发明授权
    Torque fluctuation absorbing apparatus 有权
    扭矩波动吸收装置

    公开(公告)号：US08398491B2

    公开(公告)日：2013-03-19

    申请号：US12912213

    申请日：2010-10-26

    申请人： Tomohiro Saeki ,  Masanori Suzuki ,  Yuki Miyamoto ,  Atsushi Yamazumi ,  Masaki Kato ,  Hiroyuki Yamamoto ,  Toshiyuki Saburi ,  Ryota Akada

    发明人： Tomohiro Saeki ,  Masanori Suzuki ,  Yuki Miyamoto ,  Atsushi Yamazumi ,  Masaki Kato ,  Hiroyuki Yamamoto ,  Toshiyuki Saburi ,  Ryota Akada

    IPC分类号： F16D7/02

    CPC分类号： F16F15/129 ,  F16F2230/02

    摘要： A torque fluctuation absorbing apparatus includes a first plate member, a second plate member rotatable relative to the first plate member, and a first friction member disposed between the first plate member and the second plate member and pressed against the first plate member in a slidable manner. The second plate member includes a first retaining surface that makes contact with the first friction member. The first friction member includes a plurality of grooves at a surface facing the first retaining surface of the second plate member, the grooves extending in a radial direction of the first friction member.

    摘要翻译： 扭矩波动吸收装置包括第一板构件，可相对于第一板构件旋转的第二板构件和设置在第一板构件和第二板构件之间的第一摩擦构件，并以可滑动的方式压靠第一板构件 。 第二板构件包括与第一摩擦构件接触的第一保持面。 第一摩擦构件包括在面向第二板构件的第一保持面的表面处的多个槽，所述槽沿第一摩擦构件的径向方向延伸。

    Torque fluctuation absorber
    8.
    发明授权
    Torque fluctuation absorber 有权
    扭矩波动吸收器

    公开(公告)号：US08357050B2

    公开(公告)日：2013-01-22

    申请号：US12730691

    申请日：2010-03-24

    申请人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto ,  Masanori Suzuki

    发明人： Tomohiro Saeki ,  Satoshi Nakagaito ,  Hiroaki Suezaki ,  Yuki Miyamoto ,  Masanori Suzuki

    IPC分类号： F16D7/02

    CPC分类号： F16D7/025 ,  F16F15/1297

    摘要： A torque fluctuation absorber includes a first plate member to which power of rotation is transmitted from a first rotational shaft, a second plate member arranged at a preset distance from the first plate member, a third plate member arranged between the first plate member and the second plate member and configured to transmit power of rotation to a second rotational shaft. The torque fluctuation absorber also includes a fourth plate member arranged at a preset distance from the second plate member, and a resilient member arranged between the second plate member and the fourth plate member and configured to bias the second plate member towards the third plate member. The resilient member includes a first end abutting against the second plate member in an area where the second plate member faces the third plate member in the axial direction, and a second end abutting against the fourth plate member.

    摘要翻译： 扭矩波动吸收器包括：第一板构件，其旋转动力从第一旋转轴传递，第二板构件布置在距离第一板构件预定距离处;第三板构件，布置在第一板构件和第二板构件之间; 并且构造成将旋转动力传递到第二旋转轴。 扭矩波动吸收器还包括以与第二板构件预定距离布置的第四板构件和布置在第二板构件和第四板构件之间的弹性构件，其构造成朝向第三板构件偏压第二板构件。 弹性构件包括在第二板构件在轴向方向上面对第三板构件的区域中抵靠第二板构件的第一端和抵靠第四板构件的第二端。

    High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element
    9.
    发明申请
    High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element 有权
    高介电常数绝缘膜，薄膜电容元件，薄膜多层电容器以及薄膜电容元件的制造方法

    公开(公告)号：US20060091494A1

    公开(公告)日：2006-05-04

    申请号：US10546834

    申请日：2004-02-24

    申请人： Yuki Miyamoto ,  Yukio Sakashita

    发明人： Yuki Miyamoto ,  Yukio Sakashita

    IPC分类号： H01L29/00 ,  H01L21/00

    CPC分类号： H01G4/1218 ,  C01G29/006 ,  C01P2006/40 ,  C04B35/475 ,  C04B2235/3213 ,  C04B2235/6585 ,  C04B2235/787 ,  H01G4/30 ,  H01L28/55 ,  Y10S438/957

    摘要： A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2 Am−1 Bm O3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layer 8a and a lower portion electrode 6, a second bismuth layer-structured compound layer 8b including bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer 8a.

    摘要翻译： 电介质薄膜8，其包含由（Bi 2 O 2 O 2）2 +的组成式表示的第一铋层结构化合物层8a， （A m-1-B）O 3 m + 1 + 2 - 或 - - - - （2） 其中“m”是正数，“A”在...的位置 选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，“B”是选自Fe，Co，Cr，Ga，Ti，Nb，Ta，Sb，V，Mo中的至少一种元素， 在第一铋层结构化合物层8a和下部电极6之间，包含超过所述第一铋层结构化合物层8的组成式中的铋的第二铋层结构化合物层8b 一个。

    Registration accuracy measurement mark
    10.
    发明授权
    Registration accuracy measurement mark 失效
    注册精度测量标记

    公开(公告)号：US5892291A

    公开(公告)日：1999-04-06

    申请号：US670313

    申请日：1996-06-27

    申请人： Koichiro Narimatsu ,  Shigenori Yamashita ,  Nobuyuki Yoshioka ,  Shinya Soeda ,  Atsushi Hachisuka ,  Koji Taniguchi ,  Yuki Miyamoto ,  Takayuki Saito ,  Ayumi Minamide

    发明人： Koichiro Narimatsu ,  Shigenori Yamashita ,  Nobuyuki Yoshioka ,  Shinya Soeda ,  Atsushi Hachisuka ,  Koji Taniguchi ,  Yuki Miyamoto ,  Takayuki Saito ,  Ayumi Minamide

    IPC分类号： G03F1/36 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H05K1/02 ,  H01L23/544

    CPC分类号： G03F7/706 ,  G03F7/70633 ,  Y10T428/24802 ,  Y10T428/24917

    摘要： The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

    摘要翻译： 本发明包括形成在第一层中的第一半导体元件形成元件，通过与第一半导体元件形成元件相同的制造步骤形成的第一测量标记，形成在第一层之上的第二层中的第二半导体元件形成元件， 以及在与第二半导体元件形成部件相同的制造步骤中形成的用于测量第一和第二半导体元件形成部件之间的配准精度的第二测量标记。 第一测量标记具有在照射光时受到与第一半导体元件形成部件相同的像差影响的图案，并且第二测量标记具有受光照射时受到与第二半导体元件形成部件相同的像差影响的图案 。 因此，可以提供考虑到像差影响的配准精度测量标记。